In this study, GaAs metal–oxide–semiconductor (MOS) capacitors using Y‐incorporated TaON as gate dielectric have been investigated. Experimental results show that the sample with a Y/(Y + Ta) atomic ratio of 27.6% exhibits the best device characteristics: high k value (22.9), low interfacestate density (9.0 × 1011 cm–2 eV–1), small flatband voltage (1.05 V), small frequency dispersion and low gate leakage current (1.3 × 10–5A/cm2 at Vfb + 1 V). These merits should be attributed to the complementary properties of Y2O3 and Ta2O5:Y can effectively passivate the large amount of oxygen vacancies in Ta2O5, while the positively‐charged oxygen vacancies in Ta2O5 are capable of neutralizing the effects of the negative oxide charges in Y2O3. This work demonstrates that an appropriate doping of Y content in TaON gate dielectric can effectively improve the electrical performance for GaAs MOS devices.
Capacitance–voltage characteristic of the GaAs MOS capacitor with TaYON gate dielectric (Y content = 27.6%) proposed in this work with the cross sectional structure and dielectric surface morphology as insets. 相似文献
The stability of a reflection-mode GaAs photocathode has been investigated by monitoring the photocurrent and the spectral response at room temperature.We observe the photocurrent of the cathode decaying with time in the vacuum system under the action of Cs current,and find that the Cs atoms residing in the vacuum system are helpful in prolonging the life of the cathode.We examine the evolution and analyse the influence of the barrier on the spectral response of the cathode.Our results support the double dipolar model for the explanation of the negative electron affinity effect. 相似文献
Adsorption process of methylchloride (CH3Cl) on the GaAs (0 0 1)-2 × 4 surface was studied by a scanning tunnelling microscopy (STM) measurement. The arsenic rich 2 × 4 surface, which was prepared by molecular beam epitaxy (MBE), was exposed to a supersonic molecular beam of CH3Cl with a kinetic energy of 0.06 eV. New bright spots appeared on the CH3Cl exposed surface. They were largely observed at the “B-type” step edge and divided into two types according to their locations. It was suggested that new spots were due to weakly adsorbed CH3Cl molecules without any dissociation. The adsorption mechanism of CH3Cl molecule was also studied by an ab initio Hartree-Fock calculation, which explained the experimental results well. 相似文献
The ultra high vacuum chamber was developed in the Department of Nuclear Physics, University of Madras with the funding from
DST, India. This UHV chamber is used to prepare nanocrystalline materials by inert gas condensation technique (IGCT). Nanocrystalline
materials such as PbF2, Mn2+-doped PbF2, Sn-doped In2O3 (ITO), ZnO, Al2O3, Ag2O, CdO, CuO, ZnSe:ZnO etc., were prepared by this technique and characterized. Results of some of these materials will be
presented in this paper. In solid-state207Pb NMR on PbF2 a separate signal due to the presence of grain boundary has been observed. The structural phase transition pressure during
the phase transformation from the cubic phase to orthorhombic phase under high pressure shows an increase with the decrease
in grain size. Presence of electronic centres in nanocrystalline PbF2 is observed from Raman studies and the same has been confirmed by photoluminescence studies. Al2O3 was prepared and56Fe ions were implanted. After implantation segregation of56Fe ions was examined by SEM. The oxidation properties of ITO were studied by HRTEM. As against the expectation of oxide coating
on individual nanograins of In-Sn alloy, ITO nanograins grew into faceted nanograins on heat treatment in air and O2 atmosphere. The growth of ITO under O2 atmosphere showed pentagon symmetry. The PMN was initially prepared by solid-state reaction. Further, this PMN relaxor material
will be used to convert into nanocrystalline PMN by IGCT with sputtering and will be studied 相似文献
When arsenides are grown by molecular beam epitaxy at low substrate temperatures, as much as 2% excess arsenic can be incorporated into the epilayer. This excess arsenic is in the form of antisites, but there is also a substantial concentration of gallium vacancies. With anneal, there is a significant decrease in the arsenic antisite and gallium vancancy concentrations as the excess arsenic precipitates. With further anneal, the arsenic precipitates coarsen. This combination of low substrate temperature molecular beam epitaxy and a subsequent anneal results in a broad spectrum of materials, from highly defected epilayers to a two-phase system of semimetallic arsenic precipitates in an arsenide semiconductor matrix. These materials exhibit some very interesting and useful electrical and optical properties. 相似文献
The transition phase of GaAs from the zincblende (ZB)
structure to the rocksalt (RS) structure is investigated by ab initio plane-wave
pseudopotential density functional theory method, and the thermodynamic
properties of the ZB and RS structures are obtained through the
quasi-harmonic Debye model. It is found that the transition from the ZB
structure to the RS structure occurs at the pressure of about 16.3\,GPa,
this fact is well consistent with the experimental data and other theoretical results. The
dependences of the relative volume V/V0 on the pressure P, the Debye
temperature \Th and specific heat CV on the pressure P, as well as
the specific heat CV on the temperature T are also obtained
successfully. 相似文献