掺Yb3+氧化镧钇透明激光陶瓷的光谱特性

采用传统陶瓷烧结工艺,在无压还原气氛下低温制备出透明性良好的掺Yb3+氧化镧钇透明激光陶瓷,测试了其在室温下的吸收光谱、发射光谱和荧光寿命.结果表明,掺Yb3+氧化镧钇透明激光陶瓷的吸收系数随着Yb3+掺杂浓度的增加而增大,最强吸收峰974nm处的吸收截面为0.90～1.12×10－20 cm2;主发射峰1 032 nm和1 075 nm处的发射截面分别为1.05×10－20 cm2和0.87×10－20 cm2; Yb3+掺杂浓度为5at.%时荧光寿命为1.38 ms,并随Yb3+掺杂浓度的增加而减小;当Yb3+掺杂浓度超过10at.%时,样品中存在严重的浓度猝灭.产生浓度猝灭的原因是高掺杂时离子间存在合作上转换和能量转移.     

sp3sTight-binding parameters for transport simulations in compound semiconductors

A genetic algorithm approach is used to fit orbital interaction energies of sp3s* tight-binding models for the nine binary compound semiconductors consistent of Ga, Al, In and As, P, Sb at room temperature. The new parameters are optimized to reproduce the bandstructure relevant to carrier transport in the lowest conduction band and the highest three valence bands. The accuracy of the other bands is sacrificed for the better reproduction of the effective masses in the bands of interest. Relevant band edges are reproduced to within a few meV and the effective masses deviate from the experimental values typically by less than 10%.     

GaAs被动调Q Nd:YAG激光器激光特性的研究

报道了用半导体材料 Ga As实现氙灯抽运 Nd:YAG激光器的被动调 Q运转 ,测量了激光器的阈值、脉冲宽度和输出能量。从 Ga As的能级结构出发 ,理论上研究了 Ga As材料的饱和吸收原理 ,建立了调 Q激光器速率方程并给出了数值解 ,对理论结果与实验结果进行了比较和讨论。     

GaAs/SiO2纳米晶镶嵌薄膜的拉曼光谱与吸收光谱研究

采用射频磁控共溅射与高真空退火相结合的方法,分别在单晶硅片和光学石英玻璃片上制备了ＧａＡｓ／ＳｉＯ２纳米晶镶嵌薄膜样品。激光拉曼光谱的测量结果表明,退火态样品（４００℃,６０ｍｉｎ）的拉曼光谱特征峰呈现宽化和红移,红移量为９．５ｃｍ＾－１,对应薄膜中ＧａＡｓ纳米晶粒平均粒径约为３ｎｍ。样品的室浊吸收光谱测量结果表明,由于受量子限域效应的主导作用,与ＧａＡｓ块状单晶相比,样品光学吸收边呈现出明显的蓝     

Millimeter and submillimeter detection using Ga1?xAlxAs/GaAs heterostructures

We have shown that a Ga_1–xAl_xAs/GaAs heterostructure can be used as a sensitive tunable detector of mm-wave/sub-mm-wave radiation. The mechanism for detection requires the application of a magnetic field varying from approximately 0.2T at 94GHz (3.2mm wavelength) to 6.2T at 2500GHz (119m wavelength). The responsivity and N.E.P. at 3.2mm have been roughly estimated at 200V/W and 5×10^–11W/Hz respectively. The speed of such a detector could be several orders of magnitude greater than comparable InSb detectors.     

MSM结构GaAs探测器的抗辐照性能

研究一种双金属接触的GaAs半导体探测器在14MeV中子辐照下的性能.测量了探测器经过10¹²n/cm²中子辐照剂量后的反向漏电流、电荷收集效率和最小电离粒子能谱,并且与⁶⁰Co 1.25MeV光子辐照的测量结果相比较.对中子辐照引起探测器时间性能变化和辐照损伤机制进行了探讨.并根据实验结果提出了这种双金属接触GaAs探测器灵敏层分布的一种假设,理论计算和实验数据相符合.     

具有高机械强度的掺Er~(3 )∶TeO_2-Nb_2O_5玻璃的光谱性质研究

熔制了掺铒碲铌玻璃样品(100-X)TeO2-XNb2O5(X=5,10,15,20mol%),测试了其密度、折射率、转变温度、析晶温度、维氏机械强度、吸收光谱、荧光光谱、荧光寿命等参量。利用Judd-Ofelt和McCumber理论分别计算了铒离子强度参量Ωt(t=2,4,6)和受激发射截面σemi的大小,研究了掺铒碲铌玻璃样品光谱参量对Nb2O5成分的依赖性,并与典型的碲锌钠玻璃(75TeO2-20ZnO-5Na2O)在热学、机械强度、光谱性质和放大品行四个方面进行了比较.     

LD泵浦Nd∶GdVO4/GaAs被动调Q激光器研究

报道了采用大功率半导体激光器端面泵浦Nd∶GdVO4晶体,利用GaAs晶片兼作饱和吸收被动调Q元件和输出耦合镜,实现了1.06 μm激光的被动调Q运转.在泵浦功率为13.9 W时,获得最高平均输出功率为3.6 W,脉冲宽度为252 ns,单脉冲能量为27 μJ以及峰值功率为107 W的激光脉冲.     

GaAs极化电子源激活的yo-yo过程研究

通过对GaAs晶体产生极化电子束流的实验过程研究,着重对yo-yo过程中不同的实验参数对产生极化束流以及束流稳定情况的影响进行了分析,为获得稳定而持久的极化电流提供了有力的实验支持,并讨论了极化电流强度的可控性. 关键词： GaAs晶体 极化电子束 yo-yo过程 激活     

Investigation of annealing effects on the structural, magnetic and transport properties of Co/GaAs(0 0 1) thin films

Present paper deals with the structural, magnetic and transport studies of as-deposited as well as annealed Co/GaAs(0 0 1) thin film at different temperatures. The X-ray diffraction measurements show oriented growth of as-deposited Co film in the hcp (0 0 2) direction. However, the sample annealed at higher temperatures shows formation of ternary Co₂GaAs phase at the interface. Corresponding magnetic and transport measurements show decrement in magnetization and resistivity with annealing temperatures. The observed reductions in magnetization and resistivity values are mainly attributed to the formation of ternary Co₂GaAs phase at the interface.