Hole Burning and Fluorescence Spectra of Sol-Gel Derived Sm2+-Doped Glasses

Sm2+-doped glasses in the system of Al2O3-SiO2 were prepared by sol-gel processing of metal alkoxides and reacting with H2 gas at 800°C. The hole burning properties of these glasses were investigated. The holes were burned in the 7F0 5D0 line of the Sm2+ ions using a DCM dye laser at 77 K. The hole depth increased with increasing the laser irradiation time, reaching up to 15% of the total intensity within a few hundred seconds. The hole width was 3 cm–1 full width at half maximum. Fluorescence line narrowing spectra of the 5D0 7 F1 transition were analyzed to study the local structure surrounding the Sm2+ ion. It is concluded that the Sm2+ ions are closely coordinated with nine oxygens of the AlO6 group in aluminosilicate glasses and that the addition of Al3+ ions into glass induces an increase in the coordination number of the Sm2+.     

Structural characterization techniques for the analysis of semiconductor strained heterostructures

A combined method for structural characterization of strained epitaxial heterostructures involving different techniques such as Rutherford backscattering spectrometry (RBS), multiple crystal X-ray diffractometry (MCD) and transmission electron microscopy (TEM) is presented. In order to obtain a complete characterization of the analysed structure, three different quantities are measured independently: the epilayer thickness, the density of misfit dislocations which may appear at the interface, and the significant components of the strain tensor, mainly the tetragonal distortion, affecting the epilayer lattice. In this way the thermodynamic state and the mechanisms of plastic deformation of the structures can be fully investigated. In this contribution we present and discuss the experimental results concerning a set of InP/GaAs samples having different layer thicknesses ranging from 5 to 500 nm. The thickness of the samples has been determined by RBS. Measurements of in-plane strain and tetragonal distortion have been performed by MCD and RBS-channelling respectively, finally TEM has been used for determining the defects densities and distribution.     

GaAs pyramidal quantum dot coupled to wetting layer in an AlGaAs matrix: A strain-free system

In this contribution, the electronic and linear and nonlinear optical properties of pyramid-shaped GaAs quantum dots (QDs) coupled to wetting layer (WL) in an Al_0.3Ga_0.7As matrix have been investigated. This nanostructure is relaxed from strain effects due to very small lattice-mismatching. Three transitions of P-to-S, WL-to-P, and WL-to-S were considered and the corresponding transition dipole moments, oscillator strengths, and linear and nonlinear optical properties regarding to these transitions were investigated as a function of the QD height. The results showed that for P-to-S transition, which is a purely in-plane-polarized transition, the dependence of electronic and optical properties on the size is moderate and can be neglected. But for WL-to-P and WL-to-S transitions, which are in-plane- and z-polarized transitions, respectively, the electronic as well as optical properties are strongly size-dependent. Furthermore, a competition between WL-to-S and WL-to-P transitions was observed when the QD size changed.     

具有高机械强度的掺Er3+∶TeO2-Nb2O5玻璃的光谱性质研究

熔制了掺铒碲铌玻璃样品(100-XTeO2-XNb2O5(X=5,10,15,20 mol%),测试了其密度、折射率、转变温度、析晶温度、维氏机械强度、吸收光谱、荧光光谱、荧光寿命等参量。利用Judd-Ofelt和McCumber理论分别计算了铒离子强度参量Ωt (t=2, 4, 6)和受激发射截面σemi的大小,研究了掺铒碲铌玻璃样品光谱参量对Nb2O5成分的依赖性,并与典型的碲锌钠玻璃（75TeO2-20ZnO-5Na2O）在热学、机械强度、光谱性质和放大品行四个方面进行了比较.     

铟封前后透射式GaAs光电阴极光谱响应特性的测试与分析

利用自行研制的光谱响应测试仪工程化样机,对透射式GaAs光电阴极在高温激活结束、低温激活结束以及铟封成管后的光谱响应特性进行了测试。结果显示,铟封后阴极整个响应波段的光谱响应下降,长波响应受到最显著的影响,表现为800~815 nm之间长波响应大幅度衰减,截止波长和峰值波长向短波移动,峰值响应和积分灵敏度减小,最终的光谱响应曲线变得平坦。阴极参量的计算结果反映铟封后阴极的表面逸出几率降低,说明铟封引起阴极表面激活层发生变化,使得能量较低的长波段光生电子不容易逸出,阴极长波响应和灵敏度随之降低。进一步分析了铟封过程中影响阴极表面激活层的因素。     

掺铥氟磷玻璃的结构、热学性质和光谱性质

制备了不同Al(PO3)3含量的掺铥系列氟磷玻璃,研究了其结构、热稳定性和光谱性质。随着Al(PO3)3含量的增加,该系列玻璃的密度降低,折射率增加,差热分析表明,转变温度、析晶起始温度、析晶峰温度和熔化温度增加。Al(PO3)3摩尔浓度在7%~9%时析晶稳定性最佳。采用归一化的拉曼光谱分析了材料的结构和声子状况,对于该系列氟磷玻璃,Al(PO3)3含量的增加不会影响声子能量,但使声子密度增大。测试了样品的吸收光谱,Tm3 的3H6→3F4在第三通信窗口的L波段有明显吸收。与在其它玻璃基质中相比,Tm3 的3F4能级对应能量偏高,3H4能级对应能量偏低,使得3H4→3F4跃迁波长较大,接近于增益迁移光纤放大器的放大波长。扎得奥菲而特(Judd-Ofelt)理论分析表明随着Al(PO3)3含量增加,离子强度参量Ω2增大,Ω6保持相对稳定,Tm3 的能级寿命降低。     

GaInP/GaAs/Ge三结太阳电池不同能量质子辐照损伤模拟

以GaInP/GaAs/Ge三结太阳电池为研究对象,开展了能量为0.7, 1, 3, 5, 10 MeV的质子辐照损伤模拟研究,建立了三结太阳电池结构模型和不同能量质子辐照模型,获得了不同质子辐照条件下的I-V曲线,光谱响应曲线,结合已有实验结果验证了本文模拟结果,分析了三结太阳电池短路电流、开路电压、最大功率、光谱响应随质子能量的变化规律,利用不同辐照条件下三结太阳电池最大输出功率退化结果,拟合得到了三结太阳电池最大输出功率随位移损伤剂量的退化曲线.研究结果表明,质子辐照会在三结太阳电池中引入位移损伤缺陷,使得少数载流子扩散长度退化幅度随质子能量的减小而增大,从而导致三结太阳电池相关电学参数的退化随质子能量的减小而增大.相同辐照条件下,中电池光谱响应退化幅度远大于顶电池光谱响应退化幅度,中电池抗辐照性能较差,同时中电池长波范围内光谱响应的退化幅度比短波范围更大,表明中电池相关电学参数的退化主要来源于基区损伤.     

氢对GaAs薄膜的钝化作用

报导了射频磁控溅射与沉积气氛掺氢相结合制备单层(13~20 nm厚)高质量GaAs多晶态纳米薄膜的方法,研究了氢钝化对薄膜微观结构及光学性质的影响.对GaAs薄膜进行了X射线衍射、原子力显微镜、吸收光谱、光致荧光谱的研究分析.结果表明,衬底温度500℃的掺氢薄膜和520℃的薄膜呈面心立方闪锌矿结构,薄膜的晶团尺寸较大,微观表面较为粗糙,其吸收光谱出现了吸收边蓝移和明显的激子峰,带隙光致荧光峰强明显增加,说明氢在衬底温度500℃~520℃下对薄膜有重要的钝化作用.     

Recoil spectrometry: Ion accelerator based elemental characterisation of surface layers

Recoil Spectrometry covers a group of techniques that are very similar to the well known Rutherford backscattering Spectrometry technique, but with the important difference that one measures the recoiling target atom rather than the projectile ion. This makes it possible to determine both the identity of the recoil and its depth of origin from its energy and velocity, using a suitable detector system. The incident ion is typically high-energy (30–100MeV)³⁵C1,⁸¹Br or¹²⁷I. Low concentrations of light elements such as C, O and N can be profiled in a heavy matrix such as Fe or GaAs. Here we present an overview of mass and energy dispersive recoil Spectrometry and illustrate its successful use in some typical applications.     

用规整膜板对砷化镓的三维微结构图形加工刻蚀

以微齿轮图形结构作为规整模板 ,用约束刻蚀剂层技术对GaAs样品表面进行了加工刻蚀 .在有捕捉剂H3AsO3存在的情况下 ,规则微齿轮图形能够很好地在样品表面复制 .刻蚀结果与没有捕捉剂存在时的刻蚀结果做了比较 .另外还测试了不同方法制得膜板的性能 ,初步探讨了电化学模板的制作工艺 .