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111.
Superlattices of cubic gallium nitride (GaN) and gallium arsenide (GaAs) were grown on GaAs(1 0 0) substrates using metalorganic vapor phase epitaxy (MOVPE) with dimethylhydrazine (DMHy) as nitrogen source. Structures grown at low temperatures with varying layer thicknesses were characterized using high resolution X-ray diffraction and atomic force microscopy. Several growth modes of GaAs on GaN were observed: step-edge, layer-by-layer 2D, and 3D island growth. A two-temperature growth process was found to yield good crystal quality and atomically flat surfaces. The results suggest that MOVPE-grown thin GaN layers may be applicable to novel GaAs heterostructure devices. 相似文献
112.
以Co2+掺杂纳米TiO2为光催化氧化剂的原位光致化学发光分析方法 研究及其应用 总被引:1,自引:1,他引:0
研究了Co2+掺杂TiO2纳米粒子在光信号诱导下产生的超氧阴离子自由基在纳米粒子表面的吸附和解吸特性. 当以该纳米粒子为光催化氧化剂进行原位光致化学发光反应时, 光诱导产生的超氧阴离子自由基通过扩散穿过纳米粒子表面的双电层到达本体溶液, 与溶液中的化学发光试剂进行化学发光反应. 由于超氧阴离子自由基在纳米粒子表面的吸附、解吸和双电层效应, 使得光化学反应和其后的光生氧化剂的化学发光反应具有时间和空间的分辨特性. 将 Co2+掺杂TiO2纳米粒子光致化学发光反应的特点与鲁米诺化学发光体系结合, 建立了一种原位光致化学发光反应的新方法, 并提出了一种基于纳米技术调控化学发光反应的新思路. 在最佳反应条件下, 该方法对格列本脲响应的线性范围为2.0×10-8~1.0×10-6 g8226;mL-1, 检出限为6×10-9 g8226;mL-1. 相似文献
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Koich Akiyama Nobuyuki Tomita Yoshinori Nomura Toshiro Isu Hajime Ishihara Kikuo Cho 《Physica E: Low-dimensional Systems and Nanostructures》2000,7(3-4)
We demonstrate a remarkable thickness dependence of nonlinear optical response of exciton–polaritons in GaAs thin films by degenerate four-wave mixing (DFWM) at low temperature (T=5 K). High-quality samples of layer thickness from 80 to 200 nm were grown by molecular beam epitaxy. Confined mode of the exciton–polariton dominantly contributed to the reflection spectra, which were examined by the calculation using a transfer matrix method. The DFWM intensity at exciton resonance was enhanced at a particular thickness (110 nm). This thickness dependence is in good agreement with the nonlocal theory, which shows a remarkable size dependence of the internal field relevant to the confined mode of the exciton–polaritons. 相似文献
115.
在真空中解理后,用XPS测得了GaAs样品(110)断面能带弯曲的动态过程.两组重掺杂n型和p型GaAs样品的费米能级分别向禁带中间的方向移动了0.4eV和0.3eV.实验测得重掺杂n型和p型GaAs样品费米能级之差为1.3eV,它们的禁带宽度理论值为1.42eV,这说明结果是合理的.根据实验结果,对引起GaAs表面能带弯曲的可能原因进行了分析讨论.排除了本征表面态、真空中残留气体和X射线辐射等原因,认为解理过程在表面产生的缺陷和解理后表面晶格弛豫过程中产生的缺陷可能是导致能带弯曲的主要原因. 相似文献
116.
T. Shimada K. Hiruma M. Shirai M. Yazawa K. Haraguchi T. Sato M. Matsui T. Katsuyama 《Superlattices and Microstructures》1998,24(6):453-458
The self-organized, position-controlled and parallel growth of GaAs and InAs nanowhiskers is successfully demonstrated by using a metal–organic chemical vapour deposition method. The growth takes place preferentially along the 111 As direction with the aid of the catalytic effect of Au nanodroplets, and not along 111 Ga or In directions. The diameter and length of the whisker can be controlled artificially down to 10 nm and to over 1 μm, respectively. Doping and composition control of p- or n-type such as GaAs–InAs heterostructure formation are possible along the length direction of the whisker by changing the source gases. In order to control the growth position of the whisker, positioning of a Au nanodroplet is essential and realized by a lithographic method. By choosing the [111]B direction to the substrate surface and normal to the patterned side edges, and by positioning the Au nanodroplet on the side wall, the positioned planar nanowhisker growth and bridging are successfully demonstrated. The growth mechanism of the nanowhiskers is revealed by the scanning and transmission electron microscope observations. Nanometer-size Au-alloy droplets play an important role in the growth of the whiskers. The whisker growth process is governed by the vapor–liquid–solid growth mechanism. 相似文献
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120.
《Superlattices and Microstructures》2000,27(5-6)
A genetic algorithm approach is used to fit orbital interaction energies of sp3s* tight-binding models for the nine binary compound semiconductors consistent of Ga, Al, In and As, P, Sb at room temperature. The new parameters are optimized to reproduce the bandstructure relevant to carrier transport in the lowest conduction band and the highest three valence bands. The accuracy of the other bands is sacrificed for the better reproduction of the effective masses in the bands of interest. Relevant band edges are reproduced to within a few meV and the effective masses deviate from the experimental values typically by less than 10%. 相似文献