Passively Q-switched Self-frequency Doubling NYAB laser with GaAs Saturable Absorber

By using a passive Q-switch with GaAs saturable absorber, the Q-switched self-frequency doubling NYAB laser at 0.531μm has been successfully realized. The pulse width and the single pulse energy are measured. The numerical solutions of the coupling wave rate equations are in agreement with the experimental results.     

声表面波对GaAs(110)量子阱发光特性的调制

结合声表面波和光致发光谱在低温(15K)下对非故意掺杂的GaAs(110)量子阱结构的发光特性进行了研究.实验结果表明，由于声表面波的作用GaAs(110)量子阱的发光强度减弱,并且其对应的重空穴能级出现了分裂的现象，当施加的声波强度P_rf达到20dBm时，能级分裂ΔE达到了10meV.进一步讨论了声表面波对GaAs(110)量子阱圆偏振光自旋注入的影响. 关键词： 发光 GaAs量子阱 声表面波 自旋极化     

激光二极管抽运的GaAs被动Q开关Nd：YVO4激光器

利用固体可饱和吸收体砷化镓（GaAs）作为被动调Q元件，实现了激光二极管抽运平－凹腔掺钕钒酸钇（Nd:YVO4）激光调Q运转，详细测量了砷化镓被动调QNd:YVO4激光输出特性，获得脉宽15ns，重复频率470kHz，光束质量M^2=1.31的激光输出，调Q激光运转阈值为500mW，并数值求解了砷化镓被动调Q速率方程，讨论了被动调Q机理以及调Q脉冲宽度和脉冲重复频率对抽运速率的依赖关系，理论计算结果与实验结果相一致。     

CoOx改性TiO2光催化剂的制备、优化及其光催化分解水析氢性能研究

利用热分解法制备了不同掺杂量的CoO_x-TiO₂系列光催化剂, 并优化了制备方法。在用XRD、TEM和XPS等技术对催化剂表征的基础上，探讨了乙醇作为电子给体时CoO_x改性对P25-TiO₂光催化分解水析氢性能的影响。本文还利用连续瞬态电流-时间响应和循环伏安法等电化学方法，考察了CoO_x-TiO₂改性系列光催化剂光照条件下电流响应强度、起始光电响应特性差别及光催化析氢电位变化等光电化学性能。光催化性能实验结果表明，适当掺杂CoO_x(110～400 ℃焙烧时最佳掺杂量约为0.4wt% Co，500 ℃焙烧时最佳掺杂量约为0.6～0.8wt% Co)能够显著地提高TiO₂析氢光催化性能，产氢速率提高2个数量级。另外在适当温度下的热处理，能够改善催化剂光催化性能(最佳处理温度为300～400 ℃)。光电化学性能评价结果表明，适当掺杂CoO_x和适当温度下焙烧能在催化剂表面形成较多的析氢活性物种——含钴复合物，能有效增强催化剂光电流响应强度，并使得析氢光还原电位向有利于析氢方向位移。高含量掺杂CoO_x会在催化剂表面形成某种碳化物物种，大量含钴复合物活性中心的出现会降低光吸收效率，增加TiO₂表面光生电子-空穴复合率而使催化剂失去析氢光催化性能。     

高活性锆掺杂钴催化剂的制备及其催化甲烷燃烧性能研究

由水热法制备了掺杂锆摩尔百分比为0，10，20，30．40，50％的钴催化剂，该系列催化剂对甲烷的低温催化燃烧显示出高活性．其中，10％Zr掺杂的催化剂活性最好，可在370℃使甲烷转化率达100％．XRD分析表明，该法制得的催化剂中的活性四氧化三钴物种是由一种晶态的碳酸钴前体分解而成，Co3O4为粒径在20～40nm之问的纳米粒子．用热重分析(TG)研究了碳酸钴前体的热分解行为．     

Millimeter and submillimeter detection using Ga1?xAlxAs/GaAs heterostructures

We have shown that a Ga_1–xAl_xAs/GaAs heterostructure can be used as a sensitive tunable detector of mm-wave/sub-mm-wave radiation. The mechanism for detection requires the application of a magnetic field varying from approximately 0.2T at 94GHz (3.2mm wavelength) to 6.2T at 2500GHz (119m wavelength). The responsivity and N.E.P. at 3.2mm have been roughly estimated at 200V/W and 5×10^–11W/Hz respectively. The speed of such a detector could be several orders of magnitude greater than comparable InSb detectors.     

Photocatalytic degradation of methylene blue on Fe3+-doped TiO2 nanoparticles under visible light irradiation

Fe³⁺-doped TiO₂ composite nanoparticles with different doping amounts were successfully synthesized using sol-gel method and characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and ultravioletvisible spectroscopy (UV-Vis) diffuse reflectance spectra (DRS). The photocatalytic degradation of methylene blue was used as a model reaction to evaluate the photocatalytic activity of Fe³⁺/TiO₂ nanoparticles under visible light irradiation. The influence of doping amount of Fe³⁺ (ω: 0.00%–3.00%) on photocatalytic activities of TiO₂ was investigated. Results show that the size of Fe³⁺/TiO₂ particles decreases with the increase of the amount of Fe³⁺ and their absorption spectra are broaden and absorption intensities are also increased. Doping Fe³⁺ can control the conversion of TiO₂ from anatase to rutile. The doping amount of Fe³⁺ remarkably affects the activity of the catalyst, and the optimum efficiency occurs at about the doping amount of 0.3%. The appropriate doping of Fe³⁺ can markedly increase the catalytic activity of TiO₂ under visible light irradiation. __________ Translated from Journal of Northwest Normal University (Natural Science), 2006, 42(6): 55–56 [译自: 西北师范大学学报(自然科学版)]     

Spectrum analysis of U-doped LaBr3 single crystals. Part 1: crystal-field analysis

Single crystals of U³⁺:LaBr₃ were grown by the Bridgman-Stockbarger technique. High-resolution polarized absorption spectra of the crystals were recorded at 4.2 K in the 4000-50,000 cm⁻¹ range. Sixty-four experimental crystal-field energy levels of the U³⁺ ion were fitted to a semiempirical Hamiltonian employing free-ion, one-electron crystal-field as well as two-particle correlation crystal-field (CCF) operators with an r.m.s. deviation of 28 cm⁻¹. The performed analysis of the spectra enabled the determination of crystal-field parameters and assignment of the observed 5f³→5f³ transitions. The effects of selected CCF operators on the splitting of some specific U³⁺ multiplets have been investigated and the obtained values of Hamiltonian parameters are discussed and compared with those reported in previous analyses.     

Surfaces and interfaces in short-period GaAs/AlAs superlattices

Photoelectron spectroscopy, in particular the angular resolved photoemission excited by ultraviolet radiation (ARUPS), provides the most direct experimental information about the electron structure of crystals, both of the bulk and of the low-index surfaces. The sensitivity of the method, as well as its difficulties, when applied to GaAs/AlAs superlattices are described. The new periodicity of these man-made crystals in the direction of their growth (e.g., in the layer-by-layer growth in molecular beam epitaxy), is responsible for opening of the new energy gaps (so-called minigaps) in the electron energy bands of crystals forming the superlattice. In addition to the well-known confinement of electrons at the valence and conduction band edges in long-period superlattices, the electron confinement to the interfaces has also been found in the vicinity of minigaps in short-period superlattices. The role of this confinement in the intensities of electrons photoemitted from superlattice surfaces is discussed. Superlattices with different thicknesses in the topmost layers represent systems with a simple change of the surface atomic structure. The predictions of one-dimensional models about a change of the surface-state energy within the band gap with a change of crystal potential termination are tested for the ideally terminated (1 0 0) surface of a very thin superlattice (GaAs)₂(AlAs)₂. The results of the energy distributions of photoemitted electrons, calculated in the one-step model of photoemission, show that the ARUPS experimental observation of surface-state shifts should be possible, at least in larger minigaps. The results indicate the possibility of a straightforward tuning of the electronic structure of the superlattice surface by geometrical means.     

Self-Assembly of Gold Nanoclusters on Molecularly Modified GaAs

The elaboration of closed-packed monolayers of Au₅₅(PPh₃)₁₂Cl₆ clusters on oxidized and non-oxidized GaAs surfaces is reported. The first part of this work describes the use of silanethiol modified GaAs oxide surfaces to trap 18 nm gold colloids and Au₅₅(PPh₃)₁₂Cl₆ clusters. The surfaces characterized by AFM measurements present high-quality coverage on a quite long range for both metallic species. The second part is devoted to the elaboration of Au₅₅(PPh₃)₁₂Cl₆ cluster monolayers on non-oxidized p-type GaAs substrates, functionalized with dithiol molecules. AFM measurements demonstrate the presence of closed-packed two-dimensional arrangements of Au₅₅ clusters.