GW──I磁传感器实验仪研制

本文介绍了自制磁传感器实验仪的原理。     

Spectral anomalies and spectral switches of partially coherent and polychromatic light diffracted at an aperture

Inrecentyearsanewbranchofmodernphysicalopticscalledsingularoptics[1]hasbeendeveloped.In2002theworkinsingularopticswasextendedfrommonochromaticlighttospatiallyfullycoherentandpolychromaticlightbyGburetal.[2—4].Itwasfoundthat,whenaconverging,spatiallyfullycoherentandpolychromaticsphericalwaveisdiffractedatanaperture,anomalousspectralchangestakeplaceclosetozerosoftheintensityinthefarfield;i.e.thespectrumisredshiftedatsomepoints,blueshiftedatothers,andsplitintotwolineselsewhere.Thepredictionsofsp…     

Delayed breakdown diode and its optimal design for solid state picosecond closing switch

We study a Si-based diode with a p⁺nn⁺ structure for picosecond semiconductor closing switch and discuss the physical process, which underlies the operation principle of high-power closing switch based on a delayed breakdown diode (DBD). From the results of numerical simulations and theoretical analysis, single device has demonstrated reliable operation at 2.3 kV, 89 ps risetime, and high output dV/dt(30 kV/ns). As a contribution to the optimal design, some conclusions about trade-off are drawn by changing structure parameters and physical parameters.     

电流控阈技术及三值电流型 CMOS施密特电路

本文以开关信号理论为指导 ,对电流型 CM OS电路中如何实现阈值控制进行研究. 建立实现阈 值控制电路的电流传输开关运算 ,并用于指导电流型 CMOS施密特电路的开关级设计 .用 PSPICE程序 模拟证明了所设计的电路具有理想的施密特电路特性.     

A GaAs–InGaAs optoelectronic switch with multiple operation states

An optoelectronic switch with both n- and p-type delta-doped (-doped) quantum wells was investigated. The -doped structures formed potential wells for the carrier accumulation and potential barriers for the carrier injection. Being possessed of -doped sheets with different doping levels, the potential barriers were sequentially collapsed to produce a double negative-differential-resistance (NDR) phenomenon in the current–voltage (I–V) characteristics of the device, due to the carrier accumulation in the potential wells. The device also showed an optical function related to the barrier heights controllable by incident light.     

与偏振无关双向2×2和4×4自由空间光开关

利用成熟的偏振控制技术,设计了一种由偏振光分束器、相位型空间光调制器和反射镜构成的2×2光开关,该光开关所用器件少,具有结构简单紧凑、控制灵活方便、功能实现与信号光的偏振态无关以及可以双向交换等特点;在此基础上通过2×2光开关的串连,设计了一种与偏振无关的双向4×4光开关的实验模块,根据其路由选择与控制方法,得到了4×4光开关实现信号光全排列无阻塞输出与交换对应的路由状态表,并对该实验模块的功能实现进行了详细的分析与讨论。     

AWG and EDFA based optical packet switch using feedback shared loop buffer memory

Optical packet switching provides high speed, data rate/format transparency, efficient use of bandwidth and flexibility. The major problem in the implementation of “all-optical” switching is contention which occurs when two or more packets arrive at the same time for the same destination. To resolve the contention, we have proposed an optical packet switch architecture based on WDM loop buffer memory in the feedback configuration. In that architecture, the contending packets are stored in a loop buffer module, and routed in the free time slots. The buffering duration in the recirculating loop is limited by a circulation limit. The analysis was been done to obtain the maximum number of allowed circulations. This paper proposes improved version of that optical packet switch architecture, to increase the number of maximum allowed circulations. The modification is done either by adding an extra erbium doped fiber amplifier (EDFA) in the original switch or by replacing the core space switch with arrayed waveguide grating (AWG). The performance analysis has been done by the simulations.     

Revised Assignment of the Raman Active Fundamental Vibrations of Tetracyanoethylene

We present a revised assignment of the Raman active fundamental vibrations of TCNE which utilizes new information obtained from Raman studies of electron donor/acceptor complexes of TCNE. This new assignment is consistent with and supported by all available evidence from previous studies.     

New indoline spiropyrans with highly stable merocyanine forms

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融断开关等离子体中磁场的异常渗透

简单地介绍了柱坐标粒子模拟算法及实现 ,利用粒子模拟方法对等离子体融断开关导通过程中的磁场渗透问题进行了模拟计算 ,针对不同的模拟条件出现的模拟结果进行了理论分析 ,给出了合理的物理解释。