Multiple Scattering Effects of Ag Particles in Random Ag-SiN Film

A layer of 40nm-thick Ag-SiN film with Ag nano-particles embedded and distributed randomly in the SiN thin film were deposited by the method of radiant-frequency magnetron sputtering. Specimens orderly comprising a random Ag-SiN film and an optical phase change recording layer were exposed to a focused laser beam with wavelength of 69Ohm. It is shown that, with a random Ag-SiN layer deposited above the recording layer. Calculation by the finite difference time domain method of a 4Ohm-thick SiN film under a Gaussian beam irradiation has been carried out to simulate the near-field distribution in the film, which showed a huge local near-field intensity enhancement of about 200 times if small Ag particles with diameter of 6 nm were modelled inthe SiN film in the central region of the in cident laser spot.     

模拟纳米晶体原子分布及X射线散射理论图案

通过分子动力学方法模拟纳米晶体（1—3nm）的结构．利用模拟的结果，进行了X射线衍射及径向分布函数的模拟计算．结果表明：纳米晶体晶界呈短程有序，界面原子间距分布很宽；随着晶粒尺寸的减小，晶粒的畸变越大，原子体积常数也明显增大 关键词：     

高维铁磁链系统与p—调和映射

研究了与ｐ－Ｌａｐｌａｃｅ算子对映的铁磁甸系统的Ｌａｎｄａｕ－Ｌｉｆｓｈｉｔｚ方程，证明了该方程的从ｍ（ｍ≥３）维紧流形Ｍ（不带边界）映射到Ｒ＾３中的单位球面Ｓ＾２上的整体弱解的存性；建立了ｐ调和映射理论与该方程的联系。     

Z→3γ和γγ→γγ极化张量的一般形式

在标准模型下,讨论了Z→3γ衰变和γ→γ散射过程的单圈极化张量的一般形式.利用S₃对称性和规范不变性对这种极化张量进行限制,从而得到一组约束方程.本文介绍了这种方法的主要步骤,并且将W玻色子圈的结果与费米子圈的结果作了比较.     

利用正则化方法求解浅海声波散射问题

讨论了浅海中波导的声波散射问题，我们将该问题归结为一个第一类边界积分方程，利用正同化方法求解，并证明了该方法的收敛性，数值例子表明了该方法的简单与有效性。     

用光来操纵活性生物分子

 现在展示在你面前的照片是一个红血球细胞(图1上)以及它被拉伸而变形的情形(图1下)。这是奥斯汀德克萨斯大学的一个研究组进行的研究细胞弹性的实验。他们用激光作工具,利用光进入细胞时产生的对细胞的作用力使细胞拉长,拉伸程度与激光的强度有关。由于细胞被癌病侵害后其弹性会发生改变,用这个办法能够筛选出有病细胞的数量。德克萨斯大学的这个实验也成功地证明了,如果一束激光照到一个完整的生物细胞上,在光进入细胞时对细胞有一个与进入方向相反的作用力,在光射出细胞时对细胞有一个与射出方向相同的作用力。那么这力是怎样产生的呢?其原理实际上并不很深奥。     

从二项式分布推出高斯分布

在实验中,对一个物理量在同一条件下进行测量次数很多时,测量值或随机误差通常遵守高斯分布。为简化引入该分布的手续,本文从二项式分布出发推出高斯分布。一、回顾二项式分布对一个随机事件,在同一条件下进行N次独立的试验,若以试验结果事件A发生的概率为P,A不发生的概率为(1-P),     

第一讲中子散射与散裂中子源

中子散射是研究物质微观结构和动态的理想工具之一,广泛地应用于凝聚态物质研究和应用的众多学科领域.散裂中子源能是新一代的加速器基脉冲中子源,能为中子散射提供高通量的脉冲中子.文章简明地介绍了中子散射的特点和它作为物质结构和动态探针的优越性,以及散裂中子源的基本原理、发展状况和多学科的应用优势.我国计划建设的散裂中子源CSNS中,靶站将由多片钨靶、铍/铁反射体和铁/重混凝土生物屏蔽体组成.质子束功率100kW下,脉冲中子通量约为2.4×1016n/cm2/s.第一期将设计建造高通量粉末衍射仪、高分辨粉末衍射仪、小角散射仪、多功能反射仪和直接几何非弹性散射仪等五台典型的中子散射谱仪,以覆盖大部分的中子散射研究领域.     

Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy

Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.     

Exciton—Phonon Scattering in CdSe／ZnSe Quantum Dots

A temperature-dependent photoluminescence measurement is performed in CdSe/ZnSe quantum dots with a ZnCdSe quantum well.We deduce the temperature dependence of the exciton linewidth and peak energy of the zero-dimensional exciton in the quantum dots and two-dimensional exciton in the CdSe wetting layer.The experimental data reveal a reduction of homogeneous broadening of the exciton line in the quantum dots in comparison with that in the two-dimensional wetting layer,which indicates the decrease of exciton and optical phonon coupling in the CdSe quantum dots.