高电子迁移率晶体管放大器高功率微波损伤机理

在TCAD半导体仿真环境中,建立了0.25 m栅长的AlGaAs/InGaAs高电子迁移率晶体管(HEMT)低噪声放大器与微波脉冲作用的仿真模型,基于器件内部的电场强度、电流密度和温度分布的变化,研究了1 GHz的微波从栅极和漏极注入的损伤机理。研究结果表明,从栅极注入约40.1 dBm的微波时,HEMT内部峰值温度随着时间的变化振荡上升,最终使得器件失效,栅下靠源侧电流通道和强电场的同时存在使得该位置最容易损伤;从漏极注入微波时,注入功率的高低会使器件内部出现不同的响应过程,注入功率存在一个临界值,高于该值,器件有可能在第一个周期内损伤,损伤位置均在漏极附近。在1 GHz的微波作用下,漏极注入比栅极注入更难损伤。     

L波段高功率波导缝隙阵设计与数值模拟

设计了一种基于宽边纵缝驻波阵的高功率射频微波辐射系统,系统由四路矩形波导以及聚四氟乙烯天线窗组成。天线内采用真空绝缘实现天线高功率容量,天线窗真空侧采用周期刻三角槽技术抑制高功率微波介质表面击穿。在波导缝隙阵与天线窗之间设计支撑板,除支撑天线窗外还可抑制表面波电流。采用HFSS数值模拟软件对辐射系统进行了优化设计。数值模拟结果表明,设计的辐射系统在频率为1.575 GHz时,增益为22.7 dBi,天线口径效率为98.3%,反射系数为-25 dB,带宽达到5%,带宽内天线增益波动小于等于0.4 dB、天线口径效率大于等于98%、主瓣指向偏差小于等于1.2。系统功率容量达到1.92 GW。     

振动轮式微机械陀螺频率配置和气压选择

推导了振动轮式微机械陀螺的输出信号与输入角速度的幅频、相频关系,讨论了在不同的频率配置和品质因数下陀螺的灵敏度、带宽和零位稳定性。陀螺振动频率应设计在2kHz左右,检测轴自然频率比驱动轴高一个陀螺频带宽度。根据实测陀螺振动品质因数与气压的关系曲线,振动轮式微机械陀螺合适的工作气压是100Pa-1000Pa。     

Suppression of Chaos and Phase Locking in Two Coupled Nonidentical Neurons under Periodic Input

Dynamical behaviour of two coupled neurons with at least one of them being chaotic is presented. Bifurcation diagrams and Lyapunov exponents are calculated to diagnose the dynamical behaviour of the coupled neurons with the increasing coupling strength. It is found that when the coupling strength increases, a chaotic neuron can be controlled by the coupling between neurons. At the same time, phase locking is studied by the maxima of the differences of instantaneous phases and average frequencies between two coupled neurons, and the inherent connection of phase locking and the suppression of chaos is formulated. It is observed that the onset of phase locking is closely related to the suppression of chaos. Finally, a way for suppression of chaos in two coupled nonidentical neurons under periodic input is suggested.     

Phase-Locked Fibre Array for Coherent Combination and Atmosphere Aberration Compensation

We report a fibre amplifier array that not only achieves coherent beam combination by compensation of phase noises of fibre amplifier, but also accomplishes correction of atmosphere aberration. It is of master-oscillatormultiple-amplifier （MOPA） configuration, which can be phase-locked by the multidither principle or heterodyne detection principle. First laboratory experiments of atmosphere aberration compensation of a three-element fibre amplifier array are reported. The atmosphere aberration is created by a phase screen in the experiment. The phase changes of the beam, which are introduced by the fibre amplifier and the phase screen, are both detected by the heterodyne detection method. Phase modulators are controlled to compensate for the phase in the three paths. No matter whether there is a phase screen producing atmosphere aberration or not, the dim dynamic interference fringes in the far field turn to a clear and stable pattern, and the peak intensity is maximized. It is indicated that the fibre amplifier array is phase-locked, and coherent combination of the three beams is achieved. It can be used not only to obtain high power fibre laser array but also in laser space communication.     

轴向提取矩形波导TE10模虚阴极振荡器

轴向提取矩形波导TE10模虚阴极振荡器可以不需要模式转换器或弯曲过渡波导而直接通过天线轴向辐射微波,从而使微波源及其辐射系统更加紧凑。粒子模拟结果表明,在400 keV,8.9 kA的束流条件下,轴向提取矩形波导TE10模虚阴极振荡器在2.12 GHz处可以获得功率为500 MW的高功率微波输出,功率效率为14%,频率、模式纯净。这些结果为相同波段同类装置的小型化提供了一条可能的技术途径。     

同轴虚阴极振荡器实验研究

介绍了中国工程物理研究院应用电子学研究所关于同轴虚阴极振荡器实验的最新进展。实验结果表明,带阳极反射板结构的同轴虚阴极振荡器比不带阳极反射板结构的同轴虚阴极振荡器输出微波功率更高,频谱更纯。在二极管电压350 kV,电流23 kA条件下,输出微波峰值功率500 MW,能量转换效率约6.2%,工作频率为3.3 GHz。对实验结果进行了理论分析。     

水平动量注入型等离子体合成射流激励器工作特性

等离子体合成射流控制技术因其具有不需要外部气源、工作频带宽、射流速度高、射流净质量通量为零、低功耗、激励器形式多样、环境适应性强等特点,成为了目前针对高速流场主动流动控制技术中应用潜能大、有望实现实际工程应用突破的流动控制装置.传统的等离子体激励器的出口多为垂直于流向或与流向成一定夹角,故垂直于流向的动量分量会对激励器的流动控制能力产生影响.为增强流向动量注入能力,拟设计一种新型的水平动量注入型等离子体合成射流激励器.主要内容有:采用外部电路电参数测量与高速纹影技术,对激励器常压下单周期工作特性与重频工作特性进行了初步研究.对水平动量注入型等离子体合成射流激励器的射流结构进行了分析,探究了该激励器工作频率对射流流场的流场特性与控制能力的影响.最后在高速纹影测量的基础上,开展了激励器高频工作时均出口动压的研究.实验表明:水平动量注入型激励器单周期射流初始速度达到220 m/s,单周期激波初始速度达到477 m/s.此外,工作频率对于激励器的影响主要体现在对激励器控制范围的影响,当激励器工作频率增高时,在相同位置时激励器的动压输入能力下降.      

A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well vertical-cavity surface-emitting laser

A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well (QW) vertical-cavity surface-emitting laser (VCSEL) based on an intra-cavity contacted structure is fabricated. A threshold current of 1.5 mA for a 22 μm oxide aperture device is achieved, which corresponds to a threshold current density of 0.395 kA/cm². The peak output optical power reaches 17.5 mW at an injection current of 30 mA at room temperature under pulsed operation. While under continuous-wave (CW) operation, the maximum power attains 10.5 mW. Such a device demonstrates a high characteristic temperature of 327 K within a temperature range from -12℃ to 96℃ and good reliability under a lifetime test. There is almost no decrease of the optical power when the device operates at a current of 5 mA at room temperature under the CW injection current.     

大口径高性能激光钕玻璃研究进展

在概述国内外高功率激光钕玻璃的发展及其主要性质的基础上,重点论述了上海光学精密机械研究所在大口径N31高功率激光钕玻璃半连续熔炼工艺、连续熔炼工艺、包边工艺等方面的研究进展。报道了半连续熔炼工艺制备的不同Nd2O3浓度N31钕玻璃的光吸收损耗和荧光寿命及小信号增益系数,并给出了这些钕玻璃坯片小信号增益系数的波动范围。通过对半连续熔炼和连续熔炼工艺制备的N31激光钕玻璃主要性能的比较,证明连续熔炼工艺制备的N31钕玻璃的主要性能指标与半连续熔炼的性能相当。对于400 mm大口径N31钕玻璃坯片的包边进行了模拟考核,结果表明,采用现有包边工艺的钕玻璃可以承受1 000次高功率氙灯辐射。