Structural Characteristics of Liquid Sn

We investigate the structural properties of liquid Sn. With the help of the internal friction (tanФ) method, it is found that a peak appears in the tan Ф - T curve, suggesting that an anomalous discontinuous temperatureinduced structure change may take place in liquid Sn. From the experimental data of pair distribution functions, we calculate the viscosity η and the excess entropy S and it is found that there are a peak of viscosity in the η-T curve and a bend of excess entropy in the S - T curve, which give a positive support to the appearance of the internal-friction peak in the tan Ф- T curve.     

连续激光诱导Zn/InP掺杂过程中温度分布的解析计算

在实验的基础上，分析表面蒸发Zn的InP样品在连续激光诱导下掺杂Zn过程.在一维热传导问题的第三类边界条件下，给出激光辐照有限厚双层材料Zn/InP温度分布的一种直观简洁的解析形式. 关键词： 激光诱导掺杂 Zn/InP 温度分布     

Soliton Solution of SU（3） Gauge Fields at Finite Temperature

Starting from a soliton model of SU（3） gauge fields, we investigate the behaviour of the model at finite temperature. it is found that colour confinement at zero temperature can be melted away under high temperatures.     

有限温度下的K介子凝聚

我们把Brown等讨论在零温时K介子凝聚的工作推广到有限温度.结果表明温度对于原子核的临界密度影响不大,新物质相有可能在重离子反应中形成.     

温度对PSⅡCP4 7/D1/D2/Cytb559复合物荧光光谱特性的影响

采用激励光源为514.5 nm的分幅扫描单光子计数荧光光谱装置对经20℃、42℃和48℃不同温度处理后的反应中心复合物CP47/D₁/D₂/Cyt b559的荧光光谱特性进行了研究.经解析,获得不同温度处理后,CP47/D₁/D₂/Cyt b559复合物最大峰值未发生变化,均在682 nm,说明Chla670的能量都由Chla682接收,但损耗愈来愈小,在48℃时,损耗程度最小,而其荧光百分比未发生多大变化.振动副带～700 nm和～740 nm的中心波长都发生蓝移,在不同温度下分别为:20℃ 703 nm,749 nm;42℃ 697 nm,744 nm;48℃ 694 nm,740 nm.因此可以推测温度的升高,影响了CP47/D₁/D₂/Cyt b559色素蛋白的二级结构以及色素分子的空间位置,使最大峰值处的荧光强度逐渐降低,振动副带逐渐蓝移.42℃的温度已造成影响,48℃影响较大.     

Pyroelectricity and Spontaneous Polarization in [111] Oriented 0.955 Pb（Zn1/3Nb2/3）O3-0.045PbTiO3 Single Crystals

We report that the measurements of the pyroelectric current of the pre-poled [111]-oriented 0.955 Pb（Zn1/3Nb2/3） O3-0.045 PbTiO3 （PZN-4.5%PT） single crystals can shed some light on the phase transition and spontaneous polarization characters of this material in a similar way to measures of remanent polarization and dielectric properties. The pyroelectric current is measured and the corresponding spontaneous polarization is calculated as a function of temperature with various poling fields added during cooling the sample from 200℃ to room temperature. Critical electric field of 0.061 k V/cm is found to be essential to induce the intermediate ferroelectric orthorhombic phase between the ferroelectric rhombohedral and tetragonal phases. Below the critical field, the polarization increases almost linearly with the increase of poling field. At the critical field, the polarization at 30OC increases abruptly from 14μC/cm^2 for a poling field of O.06kV/cm to 29.5μC/cm^2 for a poling field of 0.061 kV/cm, and afterwards, increases slowly and saturates to 31 μC/cm^2 for poling fields beyond 0.55 kV/cm.     

Temperature-Dependent Dynamic Properties of LixMn2O4 in Monte Carlo Simulations

Monte Carlo (MC) simulations are used to simulate the voltage profile and the ionic conductivity s of Li ions in LixMn2O4 and its dependence on the lithium concentration x. The open circuit potential shows clearly the two plateaus in the charge/discharge curve, which agrees well with the experimental results. The two plateaus become more and more steep when the temperature is increased. The simulated ionic conductivity shows an M-shaped curve in the plot of ionic conductivity cr versus x when the simulation temperature is low. Interestingly,the minimum valley, which lies at the middle single-phase area near x=0.5, disappears gradually when the temperature increases to 453K.     

离子束增强沉积VO2多晶薄膜的温度系数

用改进的离子束增强沉积方法和恰当的退火从V2O5粉末直接制备了VO2多晶薄膜.实验测试表明，薄膜的取向单一、相变特性显著、结构致密、界面结合牢固、工艺性能良好，薄膜的电阻温度系数（TCR）最高可达4.23%/K.从成膜机理出发，较详细地讨论了离子束增强沉积 VO2多晶薄膜的TCR高于VOx薄膜的TCR的原因.分析认为，单一取向的VO2结构使薄膜晶粒具有较高的电导激活能，致密的薄膜结构减少了氧空位和晶界宽度，使离子束增强沉积 VO2多晶薄膜结构比其他方法制备的VOx薄膜更接近于单晶VO2是其具有高TCR的原 关键词： VO2多晶薄膜 离子束增强沉积 热电阻温度系数     

物理污染

 随着科学技术的发展,人们的生活水平越来越高,可人们的生活环境越来越不利于人身的健康。机器振动要发出声波,电器设备要发射电磁波,各种热源释放着热。诸如此类的物理运动充满着空间,包围着人群,构成了人类的物理环境,一旦这些物理运动的强度超过人的忍耐限度,就形成了物理污染。电磁污染电的发明给人类带来了巨大的利益,随着电子、电器设备的迅速发展,功率越来越高,他们发出的电子辐射越来越强,过量的电辐射可导致人体内白血球总数上升。