Multisim在电工电子技术教学中的应用

1 引言 电工电子技术课程是高校工科非电专业本科生的主要技术基础课.本课程理论性实践性较强,教学内容几乎涉及到电工与电子学科的各个领域,涵盖了电路、电器、电机、模拟电子、数字电子等多门电学课程内容.该课程不但要求学生掌握电路的基本原理,更重要的是培养学生对电路的分析,设计及应用能力.     

非接触法自动测量薄膜厚度

根据白光等厚干涉原理,基于单片机改造的迈氏干涉仪用于自动测量透明薄膜厚度,采用非接触性测量法。当迈克尔逊干涉仪静镜形成的虚像与动镜相交所成的夹角很小时,在光屏上看到彩色干涉条纹,插入薄膜后,光程差改变,彩纹消失。步进电机带动微调手轮转动,当彩纹再次出现,即可得出透明薄膜厚度。     

连续变量量子纠缠增强实验的改进

通过在泵浦光和注入光路中加入高精细度模清洁器及提高实验系统锁定的精度,我们对连续变量量子增强的实验系统加以了改进,初始的EPR纠缠光场的正交振幅及正交位相分量的关联度分别从(2.4±0.2)dB,(2.4±0.2)dB提高至(4.0±0.2)dB,(3.9±0.2)dB,而输出纠缠态光场的关联度分别由原来的(3.0±0.2)dB,(3.0±0.2)dB提高至(5.6±0.2dB),(5.5±0.2)dB。与此前的实验系统相比,纠缠增强的效率及结果均有一定提高。     

非匹配负载对宽带脉冲产生器谐振特性的影响

 宽带脉冲产生器的谐振特性决定了产生电磁脉冲的频谱,分析了带耦合器的同轴1/4波长谐振器在负载为非完全匹配天线时,天线反射对谐振特性的影响。通过建立级联二端口微波网络分析模型,将非匹配负载的反射系数计入等效耦合器反射系数中,得到了输出脉冲及辐射场频谱与负载反射系数的关系式。数值模拟了包括谐振器、耦合器和天线在内的整个宽带脉冲辐射系统,得到的辐射场频谱与理论预期相符。由于负载反射的影响,在中心频率两侧产生了两个副峰,在高功率实验中也观察到了该现象。     

计算机控制光学表面成形中大规模驻留时间求解

采用基于稀疏矩阵的大规模非负最小二乘法,对大口径、微浮雕结构光学元件加工中的驻留时间进行了分析与求解,并对该算法开展了正则化研究。仿真结果表明:与传统非负最小二乘法相比,基于稀疏矩阵的大规模非负最小二乘法精度高、效率快。采用该算法仿真加工平均振幅为1.177 6倍波长的大口径、微浮雕结构光学元件,误差面形均方根收敛至0.067倍波长。     

40Gbps NRZ在基于宽带CFBG色散补偿的G.652光纤中无电中继传输500km

在基于宽带CFBG色散补偿的G.652光纤中,40Gbps NRZ码无电中继传输500km,在误码率BER=10(-10)下的功率代价约为2.2dB,积累1h的误码率为7.3×10(-12).传输系统中采用的CFBG的3dB带宽约为1.2nm,中心波长处时延纹波小于25ps,反射谱纹波小于2dB,差分群时延小于1ps....     

Improved charge trapping flash device with Al2O3/HfSiO stack as blocking layer

In this paper, we investigate an Al₂O₃/HfSiO stack as the blocking layer of a metal-oxide-nitride-oxide-silicon-type (MONOS) memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al₂O₃/HfO₂ stack as the blocking layer, the sample with the Al₂O₃/HfSiO stack as the blocking layer shows high program/erase (P/E) speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al₂O₃/HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications.     

The relation between and violation of Hardy＇s non-locality Bell inequality

We give an analytic quantitative relation between Hardy＇s non-locality and Bell operator. We find that Hardy＇s non-locality is a sufficient condition for the violation of Bell inequality, the upper bound of Hardy＇s non-locality allowed by information causality just corresponds to Tsirelson bound of Bell inequality and the upper bound of Hardy＇s non- locality allowed by the principle of no-signaling just corresponds to the algebraic maximum of Bell operator. Then we study the CabeUo＇s argument of Hardy＇s non-locality （a generalization of Hardy＇s argument） and find a similar relation between it and violation of Bell inequality. Finally, we give a simple derivation of the bound of Hardy＇s non-locality under the constraint of information causality with the aid of the above derived relation between Hardy＇s non-locality and Bell operator.     

A1/Ti/4H-SiC Schottky barrier diodes with inhomogeneous barrier heights

This paper investigates the current-voltage （I-V） characteristics of Al/Ti/4H-SiC Schottky barrier diodes （SBDs） in the temperature range of 77 K-500 K, which shows that Al/Ti/4H SiC SBDs have good rectifying behaviour. An abnormal behaviour, in which the zero bias barrier height decreases while the ideality factor increases with decreasing temperature （T）, has been successfully interpreted by using thermionic emission theory with Gaussian distribution of the barrier heights due to the inhomogeneous barrier height at the A1/Ti/4H-SiC interface. The effective Richardson constant A＊ = 154 A/cm2 . K2 is determined by means of a modified Richardson plot In（I0/T2） - （qσ）2/2（κT）2 versus q/kT, which is very close to the theoretical value 146 A/cm2 · K2.     

非链式化学HF（DF）激光器工作气体中电子分离的非稳定性和气体放电等离子体的自组织现象

报道了放电引发的非链式HF（DF）激光器中的激活介质由电子碰撞负离子分离引起的电离非稳定性。这种非稳性出现在电极空间分离、脉冲CO2激光加热的基于sF6的混合气体的大体积放电中。实验研究了自引发体放电过程中由激光加热引起的放电等离子体的自组织现象以及由此在放电间隙的大部分区域形成的准周期等离子体结构。重点分析了等离子体结构随气体温度和注入能量的变化,讨论了等离子体自组织对电子碰撞分离不稳定性所产生的影响,解释了混合气体中由于电子碰撞使负离子消失导致的单等离子体通道移动的产生机理。