替代法测量微安表内阻的不确定度分析

在测量微安表内阻的众多方法中,替代法是最简单的方法。本文全面分析了影响测量结果不确定度的因素,求出了实验测量的最佳条件,计算了普通仪器组合下测量结果的相对不确定度。     

二维磁结构的扫描隧道显微术研究

文章介绍了近年来利用扫描隧道显微术（STM）对表面和薄膜磁结构的研究进展。二维或表面磁结构可以通过在非磁性单晶上外延磁性单原子层薄膜形成，也可以在清洁的磁性单晶表面形成。利用磁性的STM针尖可以观测到原子分辨的表面磁结构。这将增进人们从纳米尺度对磁性的理解，并推动磁电子学的发展。     

电磁继电器触点参数的测试

本文介绍了电磁继电器触点电参数的测试方法，包括接触电阻、绝缘电阻参数测试。     

2003年的诺贝尔物理奖

2003年的诺贝尔物理奖授予了低温物理领域的三位物理学家，他们是Alexei A、Abrikosov(阿布里柯索夫)，Vitaly L．Ginzburg(京茨堡)以及Anthony J．Leggett(莱格特),此奖用以表彰前两者在超导电性方面的贡献，后者为在超流方面作出的贡献.大家知道，自然界中的微观粒子服从量子力学规律；     

超短强激光脉冲在等离子体隧道中传输的理论与数值模拟研究

研究了超短强激光脉冲在非扰动抛物型部分电离的预等离子体隧道中的传输特性.从Maxwell方程出发得到了两个包含衍射、三阶强度非线性、等离子体散焦、等离子体隧道聚焦以及相对论自聚焦等效应在内的激光场演化方程，即折射率方程和哈密顿-雅可比方程.在此基础 上得到了激光在等离子体隧道中传输的包络方程以及光斑半径与传输距离、隧道宽度等初始 参量的关系. 关键词： 等离子体隧道聚焦 相对论自聚焦 势阱     

Electrical Resistance Measurement of an Individual Carbon Nanotube

Aiming at the difficulty in the electrical resistance measurement, we develop a simple statistical model for the carbon nanotubes adequately dispersed in available insulated liquid and introduce the concept of “the most probability”. Based on this model, we obtain the function between macroscopic resistance R and resistance of an individual nanotube, Ro, from which one can calculate the resistance of an individual nanotube by measuring the macroscopic resistance. By computational simulation, we prove the reliability of the model. Then, we analyse the feasibility of the model when applied to experiment.     

YBa2Cu3O7-δ体系在B∥I∥c下磁场引起的电阻耗散

基于最近提出的平面外电阻耗散模型,计算了YBa_2Cu_3O_(7-8),体系在平行于c轴的磁场下不同温度时的平面外磁阻率ρ-B和不同磁场时的平面外电阻转变ρ-T.该模型预言了文献上普遍报道的该体系在外加磁场下的Lorentz力无关的耗散行为.为确信这一点,作为例子,特别将由该模型预言的理论结果与在YBa_2Cu_5O(7-8)体系中在B//I//c下测得的电阻转变曲线进行了定量地比较. 关键词：     

Pseudo-Spin-Valve Trilayer Using Amorphous CoNbZr Layer： Giant Magnetoresistance, Domain Structures and Potentials for Spin-Electronic Devices

We propose a pseudo-spin-valve (PSV) trilayer using amorphous CoNbZr Mloy for soft magnetic layers. The giant magnetoresistance (GMR), domain structures and their variation upon thermal annealing are investigated. The GMR effect is not only stable up to 300℃ but also enhanced due to the improvement of the interfaces between Cu and magnetic layers. With high annealing temperature, the magnetoresistance (MR) ratio decreases rapidly as a result of serious layer interdiffusion. Dense stripe domains, which disappear after annealing at 300℃ for 1h, are observed in the sandwiched films. It is found that after patterning to elliptic stripe with aspect ratio of 6:1, the trilayers have a single domain and their MR ratio increases. The dynamic MR behaviour under an ac magnetic field indicates that the patterned stripes have good linear MR responses. Therefore, it is believed that the CoNbZr/Cu/Co PSV trilayers have strong potentials for spin-electronic devices including magnetic random access memory.     

Threshold of Non－Destructive Pulse for Pt Tip of STM on Graphite Surface

The experimental relationship between width and amplitude of the non-destructive threshold pulse for Pt tip of a scanning tunneling microscope (STM) on graphite surface have been studied strictly and systematically in a wide range of pulse width for the first time. The threshold curve of amplitude versus width indicates that the amplitude of threshold pulse will increase with the decrease of the pulse width. A more rigorous explanation is suggested to interpret the dependence of threshold pulse amplitude on width. Fitted with the experimental data,a new empirical formula is given, extrapolated from which the threshold pulse amplitude will rise to 50 V when the pulse width decreases to 10ns.     

硬盘驱动器巨磁电阻(GMR)磁头:从微米到纳米

近年来电脑硬盘存储密度的飞速增长(年增长100％)已超出摩尔定律的预言．这种惊人的高速增长中，最关键的因素是自旋阀纳米多层膜结构，即巨磁电阻(GMR)读传感器磁头的应用．事实上，巨磁电阻磁头读传感器(reader sensor)已经实现由微电子器件向纳米电子器件转化，并且形成大规模产业．这一过程包含了自旋电子学、材料科学、微电子工程学、化学、微机械力学和工程学等诸学科和相关微加工技术综合性挑战极限，进入纳米科技领域实质性进步．