基于扫描隧道显微镜的原子电子云结构

本文简要介绍了扫描隧道显微镜的基本工作原理，展示了一些扫描样品（石墨和铜）的电子云图，在简要介绍量子力学关于原子电子云结构基本理论的基础上，通过理论上的电子云结构与扫描结果的比较，在一定程度上验证了量子力学关于原子电子云结构理论的正确性．     

2×n阶网络侧端等效电阻的另一种公式

再次研究了2×n阶梯形网络的侧端等效电阻,通过网络分析构建差分方程模型,给出了2×n阶梯形网络侧端等效电阻的另外一个普适规律,并通过具体的特例进行了比较与验证.     

T形网络与П形网络的等效变换法

电阻的T形网络与П形网络间的等效变换是电路计算中经常遇到的问题．一般教材都根据等效的概念采用基尔霍夫定律得到转换公式，过程复杂，不利于学生的理解和掌握．这里介绍一种更为简便易懂的推导方法．     

Mechanism of Striation in Dielectric Barrier Discharge

The mechanism of striations in dielectric barrier discharge in pure neon is studied by a two-dimensional particle- in-cell/Monte Carlo collision （PIC-MCC） model. It is shown that the striations appear in the plasma background, and non-uniform electrical field resulting from ionization and the negative wall charge appear on the dielectric layer above the anode. The sustainment of striations is a non-local kinetic effect of electrons in a stratified field controlled by non-elastic impact with neutral gases. The striations in the transient dielectric barrier discharge are similar to those in dc positive column discharge.     

改进实验方法减小系统误差

电阻测量的设计性实验,不仅是实验教学的重点,也是近几年高考的热点．然而学生在做测量电阻和电流表内阻的实验时,由于受实验器材所限和实验方法不尽合理,造成了较大的系统误差．针对实际问题,本人对实验方法作了一些改进,可使实验既能顺利开展,还能减小系统误差．1半偏法测电流表的内阻教材中所采用的电路图如图1所示,图中R为变阻器,R′为电阻箱．实验方法及原理如下：合上开关S_1,断开S_2,调节R的阻值,使电流表指针偏转到满刻度；保持R不变,再合上开关S_2,调节电阻箱R′,使电流表指针偏转到正好是满刻度的一半,读出     

Nd0.67Sr0.33MnOy(Y＜3.0)中的自旋相关电致电阻效应

用固相反应法制备系列Nd0.67Sr0.33MnOy(y=3.00-2.80)多晶样品.样品输运性质表现出自旋相关电致电阻特征.对氧含量等于化学计量样品,在测量温度范围内电阻不随负载电流变化,I-V曲线符合线性欧姆定律.对氧含量低于化学计量样品,当高于某一特征温度时,电阻变化符合线性欧姆定律;但低于这一特征温度时,电阻大小与负载电流有关,I-V曲线偏离线性规律;在绝缘体-导体相转变点附近,样品电阻随负载电流增大而迅速减小,表现出巨大电致电阻效应.对于y=2.85样品,当电流从1μA增加到30μA时,电致电阻接近80%.这种自旋相关的电致电阻行为与氧含量和界面有很大关系.     

磁性隧道结Ni80Fe20/Al2O3/Co的制备和物性

用等离子体氧化形成绝缘层的方法，重复性地制备出了Ni     

Fermions Tunneling from Non-Stationary Dilaton-Maxwell Black Hole via General Tortoise Coordinate Transformation

Fermions tunneling of the non-stationary Dilaton-Maxwell black hole is investigated with general tortoise coordinate transformation. The Dirac equation is simplified by semiclassical approximation so that the Hamilton-Jacobi equation is generated. Finally the tunneling rate and the Hawking temperature is calculated.     

Magnetic Tunnel Junctions with MgO／Al-O Composite Barriers

Magnetic tunnel junctions (MTJs) with structures of Ta(5 nm)/Cu(30nm)/Ta(5 nm)/Ni79Fe21 (5 nm)/Ir22Mn78 (12 nm)/Co62Fe20B18 (4 nm)/MgO(d)/Al(0.8 nm)-oxide/Co62Fe20B18 (6 nm)/Cu(30 nm)/Ta(5 nm) on a thermally oxidized Si wafer substrate were fabricated by magnetron sputtering and photolithographic patterning method. The tunnel magnetoresistance (TMR) and the bias dependence of TMR at room temperature for the MTJs with different thickness d of MgO are investigated. TMR values of over 50% as high as those of the MTJs with pure Al-O barrier and the TMR-voltage curve asymmetries, which vary with the increase of d, are observed in the MTJs with hybrid barriers after annealing at 265℃ for an hour. The dependences of TMR, resistance and coercivity of the MTJs with composite barriers on temperature are also investigated.