双预脉冲驱动X射线激光实验研究

 在“星光-Ⅱ”激光装置上进行了双预脉冲驱动类氖铬X射线激光实验，介绍了实验方法和实验结果，并对结果进行了简短讨论。由于目前“星光”装置输出能量较低，所进行的双预脉冲驱动未能显著提高X射线激光强度，改变预脉冲幅度时X射线激光强度也未有显著变化。利用MED103程序进行了模拟计算，其结果与实验结果一致。     

射束有效宽度与成像系统MTF关系的研究

射线成像系统的射线有效宽度是评定系统成像分辨率的重要成像指标。以试验的方法,通过测试系统成像的MTF,通过对成像分辨率与射线有效宽度的关系进行研究,为射线数字成像(DR)及工业CT系统设计提供了参考。     

毛细管放电X光激光装置中的预脉冲电源

 针对目前毛细管放电X 光激光装置产生的预脉冲电流幅值过大、持续时间较短的问题，提出了增加预脉冲开关抑制原有预脉冲，再外加由脉冲成形网络组成的预脉冲发生器，产生所需预脉冲的改造方案。可在主脉冲来临之前产生幅度10~50A，持续时间约17μs的方波预脉冲电流，来满足毛细管放电泵浦类氖氩X光激光实验的需要。     

Morphology of Platinum Nanowire Array Electrodepostied Within Anodic Aluminium Oxide Template Characterized by Atomic Force Microscopy

Unifrom platinum nanowires were synthesized by electrodepositing the platinum under a very low altering current frequency(20Hz) and increasing voltage(5-15V）in the proes of anodic aluminium oxide(AAO) template. Atomic force microscopy observation indicates that the template membranes we obtained have hexagonally clse-packed nanochannels.The platinum nanowires have highly ordered arrays after partially dissolving the aluminium oxide membrane.With the increasing dissolvoing time,the platinum nanowire array collapsed.A concave topography of the aluminium substrate was observed after the aluminium oxide membrane was dissolved completely and the platinum nanowires were released from the template.Platinum nanowires were also characterized by transmission electron microscopy and the phase structure of the Al/AAO/Pt composite was proven by x-ray diffraction.     

相对论二极管电子枪设计的分析解与实验的比较

本文对轴对称场二极管区电子运动所遵循的近似轨迹方程进行数值求解,以此做为设计相对论二极管电子枪的依据,与实验结果相比较,符合较好。     

Deposition of Diamond-Like carbon Films by High-Intensity Pulsed Ion Beam Ablation at Various Substrate Temperatures

Diamond-like carbon (DLC) films have been deposited on to Si substrates at substrate temperatures from 255℃ to 400O℃ by a high-intensity pulsed-ion-beam (HIPIB) ablation deposition technique. The formation of DLC is confirmed by Raman spectroscopy. According to an x-ray photoelectron spectroscopy analysis, the concentration of sp^3 carbon in the films is about 40% when the substrate temperature is below 300℃ C. With increasing substratetemperature from 25℃ to 400℃, the concentration of sp^3 carbon decreases from 43% to 8%. In other words,sp3 carbon is graphitized into sp^2 carbon when the substrate temperature is above 300℃. The results of xray diffraction and atomic force microscopy show that, with increasing the substrate temperature, the surface roughness and the friction coefficient increase, and the microhardness and the residual stress of the films decrease.     

儿童的铅中毒问题──Ⅱ．彩色油墨中铅的测定

用能量色散Ｘ射线荧光分析法测定了某厂生产的４４种彩色油墨纸中的铅含量．结果发现，除５种油墨外，其它３９种彩色油墨纸中的铅含量均比对照纸中高９倍以上，其中桔黄色、桔红色树脂胶版油墨高５００倍以上，棕色树脂胶版油墨高３７９倍，深黄色和柠檬黄色树脂铅印油墨分别高１７０和１１３倍．这表明，彩色油墨印刷品可能是儿童慢性铅中毒的重要污染源．     

布拉格（Bragg，Sir William Henrg，1862—1942）英国物理学家（Physicist，England）

由于用X射线研究晶体内原子和分子结构的贡献，布拉格和儿子小布拉格共获1915年诺贝尔物理学奖。1882年取得剑桥三一学院的奖学金，1885年以优异的成绩通过数学毕业考试，同年就任澳大利亚阿德莱德大学数学和物理教授。1912年回伦敦，发明布拉格电离分光计，为现代X射线衍射计的雏形，用它可精确测定X射线波长和晶体的各项数据。     

Schottky Barrier Height Inhomogeneity of Ti／n—GaAs Contact Studied by the I—V—T Technique

The current-voltage characteristics of Ti/n-GaAs Schottky diodes measured over a temperature range of 78-299K have been interpreted on the basis of thermionic emission across an inhomogeneous Schottky contact.The experiment shows that the apparent barrier height (φap) increases from 0.437eV at 78K to 0.698eV at room temperature.the plot of φap versus 1/T does not exhibit a simple linear relationship over the whole temperature range,indicating that the barrier height distribution is more complicated than the frequently observed single Gaussian distribution.A new multi-Gaussian distribution model is developed.Our experimental results can be explained by a double Gaussian distribution of the barrier heights.The weight,the mean barrier height,and the standard deviation of the two Gaussian functions are 0.00001 and 0.99999,0.721 and 0.696,0.069 and 0.012eV,respectively.     

Efficient Visible Electroluminescence from Porous Silicon Diodes Passivated by Carbon Films

By using n-butylamine as a carbon resource,carbon film is deposited on the p-n porous silicon (PS) surface with a radio-frequency glow discharge plasma system.Raman spectra and infrared reflection (IR) spectra of the carbon films indicate that there are amine-group and hydrogen atoms therein.The IR spectra of the passivated PS samples exhibit that the PS surfaces are mainly covered with Si-C,Si-N and Si-O bonds.Electroluminescence (EL) spectra show that the EL intensity of the passivated PS diodes increases greatly and the blueshift of the EL peak occurs compared with the diodes without treatment.Both of these are stable while the passivated diodes are exposed to the air indoors.The I-V characteristics reveal that the passivated diodes have a smaller series resistance and a lower onset voltage.The influence of the carbon film passivation on EL properties of PS has also been discussed.The results have proven that carbon film passivation is a good way to enhance the PS luminescent intensity and stability.