锂铌比对铪铁铌酸锂晶体全息存储性能的影响

以掺杂4 mol%Hf⁴⁺的LiNbO₃:Fe:Hf系列晶体（[Li]/[Nb]比变化）为研究对象,研究了系列晶体的可见吸收光谱,在632.8nm的写入光下晶体的衍射效率、灵敏度和抗光散射能力在不同[Li]/[Nb]下的变化规律.研究发现Hf⁴⁺的浓度达到阈值浓度后,随着[Li]/[Nb]比的增大,晶体的可见吸收边会发生红移,而且晶格中[Fe²⁺]/[Fe³⁺]也会增加,这就导致随着[Li]/[Nb]比的增加,样品的衍射效率逐渐减小,写入时间缩短,灵敏度增大.同时,在晶体中,随着[Li]/[Nb]的增大,陷阱中心Fe²⁺Li数量增大会使得晶体抗光散射能力减弱.     

Structural,electronic,optical,elastic properties and Born effective charges of monoclinic HfO_2 from first-principles calculations

First-principles calculations of structural, electronic, optical, elastic, mechanical properties, and Born effective charges of monoclinic HfO2 are performed with the plane-wave pseudopotential technique based on the density-functional theory. The calculated structural properties are consistent with the previous theoretical and experimental results. The electronic structure reveals that monoclinic HfO2 has an indirect band gap. The analyses of density of states and Mulliken charges show mainly covalent nature in Hf-O bonds. Optical properties, including the dielectric function, refractive index, extinction coefficient, reflectivity, absorption coefficient, loss function, and optical conductivity each as a function of photon energy are calculated and show an optical anisotropy. Moreover, the independent elastic constants, bulk modulus, shear modulus, Young＇s modulus, Poisson＇s ratio, compressibility, Lam6 constant, sound velocity, Debye temperature, and Born effective charges of monoclinic HfO2 are obtained, which may help to understand monoclinic HfO2 for future work.     

The effect of a HfO2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

A GaN/Al_0.3Ga_0.7N/AlN/GaN high-electron mobility transistor utilizing a field plate (with a 0.3 μm overhang towards the drain and a 0.2 μm overhang towards the source) over a 165-nm sputtered HfO₂ insulator (HfO₂-FP-HEMT) is fabricated on a sapphire substrate. Compared with the conventional field-plated HEMT, which has the same geometric structure but uses a 60-nm SiN insulator beneath the field plate (SiN-FP-HEMT), the HfO₂-FP-HEMT exhibits a significant improvement of the breakdown voltage (up to 181 V) as well as a record field-plate efficiency (up to 276 V/μm). This is because the HfO₂ insulator can further improve the modulation of the field plate on the electric field distribution in the device channel, which is proved by the numerical simulation results. Based on the simulation results, a novel approach named the proportional design is proposed to predict the optimal dielectric thickness beneath the field plate. It can simplify the field-plated HEMT design significantly.     

锆中铪的原子发射光谱分析法

研究了在氩氧控制气氛条件下锆中铪的分析条件,对氩氧比、激发电流、曝光时间等实验参数进行了选择。在选定条件下对实际试样进行分析,回收率在90%～113%之间,相对标准偏差小于5%,方法可用于锆中铪的质量分数为0 005%～5 0%的实样分析。     

ICP-AES测定钽合金中的钨、铪

建立了ICP-AES直接测定钽合金中钨、铪的分析方法。采用基体匹配与背景扣除法消除钽基体对钨、铪的光谱干扰,选择多谱线平均值法进行了光谱分析。待测元素的回收率为98.0%—102.2%,相对标准偏差小于1.50%。本法简便、快速、准确度高,已用于钽合金产品的检验。     

Influence of Radio-Frequecy Power on Structural and Electrical Properties of Sputtered Hafnium Dioxide Thin Films

Hafnium dioxide （HfO2） thin films are prepared by rf magnetron sputtering. The influences of rf power on the structure, chemical states and electrical properties of the thin films were investigated through x-ray diffraction, x-ray photoelectron spectroscopy, capacitance-voltage and leakage current density-voltage measurement and UV-VIS spectrophotometry. The results show that the HfO2 thin films have a mixed structure of amorphous and polycrystalline phases. With increasing rf power, the crystallinity is enhanced and the crystallite size of the thin films is increased. The oxidation of Hf atoms is improved with increasing rf power for the HfO2 thin films. The flat band shift, oxide charge density and leakage current density of the thin films all decrease as the rf power increases from 50 to 110 W, and then increase as the rf power is increased to 140 W. The band gap energy is smaller for the thin film deposited at 110 W.     

电感耦合等离子体质谱(ICP-MS)法测定锆钛矿中的铪

锆钛矿组成成分复杂,存在耐高温的锆、钛化合物,不易分解,且铪以类质同象进入锆矿物,导致锆钛矿中的铪含量不均,因此完全分解锆钛矿并准确测定其中含量不同的铪成为一个难题。本文建立了碳酸钠-硼砂高温熔融,以178Hf为分析同位素及50 ng/mL185Re为内标,使用电感耦合等离子体质谱法（ICP-MS）测定锆钛矿中铪的新方法,可准确锆钛矿中含量不均的铪。实验研究了锆钛矿成分及其熔融方法,结果表明碳酸钠-硼砂高温熔融效果最好,可完全溶解耐高温难分解的锆钛矿,当碳酸钠-硼砂质量配比为2:1时熔融效果最佳。电感耦合等离子体质谱法具有检出限低、灵敏度高、线性范围宽等优势,可用于测定锆钛矿中含量不均的铪,ICP-MS蠕动泵转速为45 rpm、雾化流量为1.06 L/min时雾化效率最优。在选定的实验条件下,HfO2质谱强度与其质量浓度在0.01～250 ng/mL范围内呈良好的线性关系,相关系数为0.9997,背景等效浓度为0.029 ng/mL,方法检出限为0.0032 ng/mL。按实验方法对中国国家标准物质中的HfO2进行测定,测定值与认定值一致,相对标准偏差在1.6%~3.2%之间。按实验方法对锆钛矿样品中的HfO2进行测定并进行加标回收率实验,测定结果的相对标准偏差（RSDs,n=9）在0.9～3.4%之间,加标回收率在96%～106%之间,满足国家地质矿产行业标准DZ/T 0130—2006的要求。     

铪基纳米金属有机骨架材料制备及X射线增强化学动力协同治疗应用

以铪簇作为金属有机骨架的连接点、刚性双羧基配体2,2’-联吡啶-5,5’-二羧酸作为连接器、乙酸或三氟乙酸和水作为结构调节剂,通过溶剂热法合成得到八面体结构(Hf-MOFs-1)和片状结构(Hf-MOFs-2)的铪基纳米金属有机骨架(Hf-nMOFs),再经Fe3+修饰得到多功能金属有机骨架材料(Hf-Fe-MOFs-1和Hf-Fe-MOFs-2)。模拟肿瘤微环境体系中羟基自由基检测结果表明,X射线照射能显著促进Hf-Fe-MOFs-1和Hf-Fe-MOFs-2材料产生羟基自由基,且片状Hf-Fe-MOFs-2羟基自由基产生能力高于八面体Hf-Fe-MOFs-1。进一步地,在细胞层面证实了材料能够成功被细胞摄入并实现低剂量X射线促进的化学动力学协同治疗。     

铪元素及其同位素的发现：技术进步和思想发展的共同结晶

1869年，门捷列夫在第一张元素周期表中的锆元素后留出原子量为180的元素位置，预测铪与锆同族。1913年，原子序数和莫斯莱定律的提出揭示了铪元素在周期表中位置排列的实质，为铪元素的发现提供理论基础。20世纪20年代，玻尔理论的发展证实铪与锆同族，指导科学家从锆矿石中寻找铪元素。1923年，赫维西和科斯特借助X射线光谱技术发现铪元素，彰显了X射线光谱技术的独特价值。20世纪30年代以后，同位素理论和质谱技术促成了铪同位素的发现，使人们对铪元素有了新的认识。总之，铪元素及其同位素的发现是技术进步和思想发展的共同结晶。