3dZ2基态铜(Ⅱ)冠醚配合物的粉末ESR谱

制备了两种不同基质的掺杂3d_Z²基态铜(Ⅱ)苯并15冠5配合物(Cu(Ⅱ)B15C5)的粉末样品,ESR测定结果表明,以B15C5为基质时,Cu(Ⅱ)B15C5的轴向配体是H₂O;而以Mg(Ⅱ)B15C5为基质时的轴向配体则是CIO₄^-.不同的轴向配体对ESR谱的线型有着较大的影响。利用Bleaney公式,计算了键参数,并对成键特性进行了讨论和比较。     

Cl^—对铜表面上表面增强剌曼散射效应的影响

以机械抛光粗糙的铜表吸附衬底，在固／液系统中对Ｃｌ＾－及其不同的存在方式对表面增强喇曼散射效应和衬底表面的影响进行了较为系统的分析研究，结果表明，只有当适量的Ｃｌ＾－以适当的方式存在时才对ＳＥＲＳ产生影响；ＳＥＲＳ衬氏的表面形貌也随Ｃｌ＾－作用方式的变化而变化。     

YBa2Cu3Oy超导体中磁通运动的性质

在液氮温区测量了 YBa_2Cu_3O_y 超导体在弱施加磁场中的磁化曲线.发现初始磁化曲线在数十高斯的磁场区出现斜率不等的两段直线.我们认为这是在颗粒结构样品中磁通在两类空间区域中运动,因而也存在两类大小不同的钉扎作用的表现.一类是颗粒边界区,这里钉扎作用较弱,磁通运动较易.另一类是颗粒内部,这里钉扎较强.对颗粒的高分辨率电镜观察表明,颗粒表面层的原子是无序的,颗粒内部的结晶区有大量的微孪晶界存在.这些结果支持以上解释.     

A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET

An analytical model for the channel potential and the threshold voltage of the short channel dual-material-gate lightly doped drain （DMG-LDD） metal-oxide-semiconductor field-effect transistor （MOSFET） is presented using the parabolic approximation method. The proposed model takes into account the effects of the LDD region length, the LDD region doping, the lengths of the gate materials and their respective work functions, along with all the major geometrical parameters of the MOSFET. The impact of the LDD region length, the LDD region doping, and the channel length on the channel potential is studied in detail. Furthermore, the threshold voltage of the device is calculated using the minimum middle channel potential, and the result obtained is compared with the DMG MOSFET threshold voltage to show the improvement in the threshold voltage roll-off. It is shown that the DMG-LDD MOSFET structure alleviates the problem of short channel effects （SCEs） and the drain induced barrier lowering （DIBL） more efficiently. The proposed model is verified by comparing the theoretical results with the simulated data obtained by using the commercially available ATLASTM 2D device simulator.     

Magnetic Properties of Co-Doped TiO2 Films Grown on TiN Buffered Silicon Substrates

Co-doped TiO2 thin films are grown on TiN buffered silicon substrates by the pulsed laser deposition method and then hydrogenated. Transmission electron microscopy and high-angle annular dark-field scanning transmission electron microscopy measurements have shown that the TiN buffer layer can suffer a 400℃ deposition temperature and prevent the growth of silicon dioxide on silicon. After that, the room temperature ferromagnetism behaviors are observed in the hydrogenated samples, which are measured by the alternating gradient magnetometer. X- ray photoelectron spectroscopy and x-ray absorption fine structure measurements have revealed the existence of cobalt clusters. According to the material analysis, the magnetic behavior after hydrogenation is suggested to be induced by the enhancement of cobalt dusters.     

Spin Polarization Properties of Na Doped Meridianal Tris（8-Hydroxyquinoline） Aluminum Studied by First Principles Calculations

We theoretically investigate the electronic structure and spin polarization properties of Na-doped meridianal tris（S-hydroxyquinoline） aluminum （Alq3） by first principles calculations. It is found that the spin density is distributed mainly in the Alq3 part in the Alq3：Na complex. Electron charge transfer takes place from the Na atom to the Alq3 molecule, which induces asymmetric changing of the molecule bond lengths, thus the spin density distribution becomes asymmetric. Spin polarization of the complex originates from the preferable filling of the spin-split nitrogen and carbon p-orbitals because of the different bond length changes of the Aiq3 molecule upon Na doping.     

Enhancing visible-light photocatalytic activity of α-Bi2O3 via non-metal N and S doping

In recent years, some important research indicated that the visible-light activity of photocatalysts could be enhanced via incorporating p-block non-metal elements into the lattice. In this paper, we investigated the electronic structures of pure and different non-metal （C, N, S, F, Cl, and Br） doped α-Bi2O3 using first-principles calculations based on the density functional theory. The band structures, the electronic densities of states, and the effective masses of electrons and holes for doped α-Bi2O3 were obtained and analyzed. The N and S dopings narrowed the band gap and reduced the effective mass of the carriers, which are beneficial for the photocatalytic performance. The theoretical predication was further confirmed by the experimental results.     

Tm~(3+)掺杂锗碲酸盐玻璃的近2μm光谱性质

用高温熔融法制备了Tm2O3掺杂浓度为0.25,0.5,0.75,1,1.25,1.5 mol%的40 Ge O2-35Te O2-15Pb O-5Al2O3-2.5Ca O-2.5Sr O锗碲酸盐玻璃.热学性质测试表明该玻璃的转变温度为446℃,没有析晶峰.玻璃的最大声子能量约为750 cm-1.利用Judd-Ofelt理论计算了Tm3+的Judd-Ofelt参数Ωt(t=2,4,6)、不同浓度下Tm3+离子各激发态能级的自发辐射概率、荧光分支比以及辐射寿命等参数.采用808 nm波长抽运源测试了Tm3+离子的荧光光谱.发现掺杂浓度为1 mol%时约1.8μm处的荧光强度最强.根据Mc Cumber理论计算了3F4→3H6的发射截面,其峰值发射截面为6.5×10-21cm2.根据速率方程计算了玻璃中OH引起的Tm3+的3F4能级的无辐射弛豫速率,随着Tm3+浓度增加,OH对3F4能级的猝灭速率增加.这种玻璃有望研制成一种新型的约2μm的激光玻璃材料.     

Enhancement of ferromagnetic resonance in Al203-doped CozFeAI Heusler alloy film prepared by oblique sputtering

Large and variable in-plane uniaxial magnetic anisotropy in a nanocrystalline （Co2FeA1）97.8（Al2O3）2.2 soft magnetic thin film is obtained by an oblique sputtering method without being induced by magnetic field or post anneaiing. The in-plane uniaxiai magnetic anisotropy varies from 50 Oe to 180 Oe （1 Oe=79.5775 A·m-1） by adjusting the sample＇s position. As a result, the ferromagnetic resonance frequency of the film increases from 1.9 GHz to 3.75 GHz.     

Oxide magnetic semiconductors： Materials, properties, and devices

We give a brief introduction to the oxide （ZnO, TiO2, In2O3, SnO2, etc.）-based magnetic semiconductors from fundamental material aspects through fascinating magnetic, transport, and optical properties, particularly at room temperature, to promising device applications. The origin of the observed ferromagnetism is also discussed, with a special focus on first-principles investigations of the exchange interactions between transition metal dopants in oxide-based magnetic semiconductors.