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41.
Structure and Photoluminescence of Nano-ZnO Films Grown on a Si (100) Substrate by Oxygen- and Argon-Plasma-Assisted Thermal Evaporation of Metallic Zn
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Nano-ZnO thin films were prepared by oxygen- and argon-plasma-assisted thermal evaporation of metallic Zn at low temperature, followed by low-temperature annealing at 300℃ to 500℃ in oxygen ambient. X-ray diffraction patterns indicate that the nano-ZnO films have a polycrystalline hexagonal wurtzite structure. Raman scattering spectra demonstrate the existence of interface layers between Zn and ZnO. Upon annealing at 400℃ for i h, the interface mode disappears, and photoluminescence spectra show a very strong ultraviolet emission peak around 381 nm. The temperature-dependent PL spectra indicate that the UV band is due to free-exciton emission. 相似文献
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用原子吸收光谱法检测了肺癌患者灌洗液中铜、锌含量及铜/锌比值。结果表明:中央型肺癌组与肺部良性疾病组比较均有极显著差异;与周围型比较,铜、铜/锌具有显著性差异;而周围型肺癌组与良性组比较,除铜/锌比值有显著性差异,Cu、Zn均无统计学意义差异。 相似文献
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Study on the in—plane electrical resistivity and thermoelectric power in single crystals of La2—xBaxCuO4
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The in-plane electrical resistivity and thermoelectric power have been measured on single crystals of La2-xBaxCuO4 at around x=0.125. The room temperature resistivity and thermopower have their maximum values at x=0.125, indicating that the carrier concentration is the minimum and the carriers are most strongly localized at x=0.125. The observed semiconductor-like behaviour can be well described by the weak-localized quasi-two-dimensional state. The steep rise in electric resistivity of the sample at x=0.125 below 70K is attributed to the formation of static stripe-order of holes and spins, which are pinned by the low-temperature tetragonal (LTT) structure, as discovered in La1.48Nd0.4Sr0.12CuO4. The temperature dependence of electric resistivity below 70K is still well described by the formula ρ∝ lnT. A definite change in the slope of thermopower is observed at the low-temperature orthorhombic-LTT structural phase transition temperature. The origin of the 1/8 anomaly is discussed in the text. 相似文献
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Thermal Rate Constants of the N(^4S)+O2(X^3∑g^-) → NO(X^2Ⅱ) +O(^3P) Reaction on the ^2A′ Potential Energy Surface
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A quasiclassical trajectory study with the sixth-order explicit symplectic algorithm for the N(^4S)+O2(X^3∑g^-) → NO(X^2Ⅱ) +O(^3P) reaction has been reported by employing a new ground potential energy surface. We have discussed the influence of the relative translational energy, the vibrational and rotational levels of O2 molecules on the total reaction cross section. Thermal rate constants at temperatures 300, 600, and 1000 K determined in this work for the reaction are 4.4 × 10^7, 1.8 × 10^10, and 3.1 × 10^11 cm^3mol^-1s^-1, respectively. It is found that they are in better agreement with the experimental data than previous theoretical values. 相似文献