电感耦合等离子体发射光谱法测定磷酸中钙、镁、铁、铝

本文叙述了用1CP-AES测定磷酸中的Ca、Mg、Fe、Al的原理,试样处理和测定方法,精密度试验相对误差分别是2.17、0.533、1.676、0.638%。回收率在95.58-105.49%之间。基体和元素间不互相干扰。     

200A GeV硫核及其重碎片与铜核作用的电荷改变总截面的测量

测量了200A GeV的³²S及其碎片P,Si,Al,Mg,Na和Ne与Cu靶作用的电荷改变总截面.观察到次级碎片的电荷改变总截面比相同电荷的初级粒子的要高.导出的电磁散裂截面与弹丸电荷的平方成比例,与理论预言一致.     

铝酸锶铕的合成与发光的研究

本文详细报导4(SrEu)O·7Al2O3.磷光体的合成及激活剂Eu2+离子浓度、硼酸、五氧化二磷等对磷光体发光强度,发射光谱和激发光谱的影响.讨论了不同Eu2+离子之间的能量传递.测量了不同Eu2+浓度下磷光体的荧光寿命和长余辉特性.     

[VS_4Cu_6(Py)_8I_3]的合成和晶体结构

在(NH4)3VS4/CuI/Py反应体系中合成了新化合物 [VS4Cu6(Py)8I3]并测定其晶体结构。该化合物(C40H40N8Cu6I3S4V)属正交晶系, 空间群为Fdd2, 晶胞参数为: a = 29.924(6), b = 13.475(3), c = 25.853(5) , V = 10425(4) ?, Dc = 2.006 g/cm3, Mr = 1573.92, Z = 8, (MoK) = 4.546 mm-1, F(000) = 6048。结构由直接法解出, 用全矩阵最小二乘法修正, 最终偏离因子R = 0.023, wR = 0.069。簇合物分子是由6个带端基配体的Cu沿着四面体单元VS4的6条SS边配位而成, 6个Cu排列成了1个八面体, V基本位于八面体的中心, 整个分子具有C2对称性。     

Crystal-Orientation Dependent Evolution of Edge Dislocations from a Void in Single Crystal Cu

The micro-void growth by dislocation emission under tensile loading is explored with focus on the influence of crystal orientations. Based on the elastic theory, a dislocation emission criterion is formulated. It is predicted that the preferential location of dislocation nucleation and its threshold stress are dependent on the crystal orientation. Large-scale molecular dynamics （MD） simulations are also performed for single crystal copper to illustrate the dislocation evolution pattern associated with a nano-void growth. The results are in line with those given by the theoretical prediction. As revealed by MD simulations, the characteristics of void growth at micro-scale depend greatly on the crystal-orientation.