自催化三分子模型内噪声随机共振

运用化学Langevin方程 ,数值研究了内噪声对单个和单向耦合自催化三分子模型动力学行为的影响 .研究发现 ,对于单个振子体系 ,内噪声可以诱导持续振荡 ,而且随着系统尺度的增大 ,信噪比经过一个极大值 ,从而证明了内噪声随机共振和最佳尺度效应的存在 ;对于单向耦合系统 ,信噪比还随耦合强度的变化而经过极大值 .此外 ,边界条件对耦合体系的内噪声随机共振行为有很大影响 ,非零流条件下 ,耦合可以增强内噪声随机共振 ,而零流条件下 ,耦合会抑制随机共振 ;当耦合强度适宜时 ,每个振子发生随机共振时的尺度几乎相同 ,表明最佳体系尺度和耦合强度有助于体系达到最佳的化学反应状态 .     

Stochastic Resonance in a Single-Mode Laser Driven by Pump Noise and Quantum Noise with Cross-Correlated Real and Imaginary Parts

We present an analytic investigation of the signal-to-noise ratio (SNR) by studying a signal modulated model of a single-mode laser system driven by pump noise and quantum noise with correlated real and imaginary parts,and find there is a maximum in the curve of the dependence of SNR upon the cross-correlation coefficient λq between the real part and the imaginary part, i.e., stochastic resonance appears in the SNR vs. λq curve. Moreover, when the SNR is at the maximum, the cross-correlation coefficient λq = O, which is coincidentally at the minimum of the mean normalized intensity fluctuation. The influences on stochastic resonance by the intensities of the pump and the quantum noise, the amplitude of the modulation signal, and the net gain of the laser are also studied. Furthermore, in order to ensure that the results obtained in this paper is reliable, the valid range for the linear approximation method is discussed.     

A Simple Calculation Approach for the Second－Harmonic Sound Beam Generated by an Arbitrary Distribution Source

We present a simple calculation approach for the fundamental and second-harmonic sound beams with an arbitrary distribution source in the quasilinear approximation. The analysis is based on the assumption that the source function with an arbitrary geometry and distribution is expanded into the sum of a set of two-dimensional Gaussian functions. The two- and five-dimensional integral solutions for the fundamental and second-harmonic fields are, respectively, reduced in terms of Gaussian functions and simple one-dimensional integrals. The numerical evaluation of field distributions is then greatly simplified.     

SU（3）F Meson Mass Formula from Random Phase Approximation

We present an SU(3)F meson mass formula from random phase approximation. Both the mesons of ground-state pseudoscalar octet and ground-state vector octet are described quite well by this mass formula. We also estimate the current and constituent quark masses from the naive quark model and the PCAC relation.     

Magnetic properties of mixed Ising system with random field

A spin-1/2 and spin-3/2 mixed Ising system in a random field is studied by the use of effective-field theory with correlations. The phase diagrams and thermal behaviours of magnetizations are investigated numerically for the honeycomb lattice (z=3) and square lattice (z=4) respectively. The tricritical behaviours for both honeycomb and square lattices, as well as the reentrant behaviour for the square lattice are found.     

用雷诺应力模型计算旋风分离器中气-固两相流动

针对分离器内部的复杂的三维强旋转、气-固两相湍流运动,采用雷诺应力模型(SSG),利用贴体网格技术,模拟计算了分离器内部流动,并将计算结果与实验数据进行分析、比较。分离器内的固体颗粒运动采用涉及湍流扩散影响的随机轨道模型和确定轨道模型,在流场计算的基础上,模拟了不同直径的颗粒在分离器内的运动规律及颗粒分离效率,并同理论和实验得到的数据进行了比较。     

High-Density Read-Only Memory Disc with Ag11In12Sb51Te26 Super-Resolution Mask Layer

A novel read-only memory (ROM) disc with an Ag11ln12Sb51Te26 super-resolution mask layer is proposed and investigated for the first time to our knowledge. The carrier-to-noise ratio of more than 40 dB could be obtained from small pits (380nm), which are below the readout resolution limit (400nm), in our dynamic setup with a wavelength of 632.8 nm and numerical aperture of 0.40. Dependences of carrier-to-noise ratio on readout power,readout velocity and film thickness are studied. The results show that the optimum film thickness is 20-50nm and the corresponding carrier-to-noise ratio is more than 40dB at readout power of 4mW and readout velocity of 2m/s in our experiment. The super-resolution readout mechanism for this ROM disc is also discussed.     

Single Cell Element of Chalcogenide Randoul Access Memory Fabricated with the Focused Ion Beam Method

A singie cell element of chalcogenide random access memory was fabricated by using the focused ion beam method.The contact size between the Ge2Sb2Te5 Phase change film and the top electrode film is about 600nm (diameter) and the contact area is caiculated to be 0.28μm^2.The thickness of the phase change film is 83nm.The current-voltage characteristics of the cell element are studied using the home-made current-voltage tester in our laboratory.The minimum threshold current of about 0.6mA is obtained.     

Pair correlations in scale-free networks

Correlation between nodes is found to be a common and important property in many complex networks. Here we investigate degree correlations of the Barabasi－Albert (BA) scale-free model with both analytical results and simulations, and find two neighbouring regions, a disassortative one for low degrees and a neutral one for high degrees. The average degree of the neighbours of a randomly picked node is expected to diverge in the limit of infinite network size. As a generalization of the concept of correlation, we also study the correlations of other scalar properties, including age and clustering coefficient. Finally we propose a correlation measurement in bipartite networks.     

Depinning dynamics of driven colloids with random pinning： a numerical study

Using Langevin simulations, we have investigated numerically the depinning dynamics of driven two-dimensional colloids subject to the randomly distributed point-like pinning centres. With increasing strength of pinning, we find a crossover from elastic to plastic depinnings, accompanied by an order to disorder transition of state and a substantial increase in the depinning force. In the elastic regime, no peaks are found in the differential curves of the velocity－force dependence (VFD) and the transverse motion is almost none. In addition, the scaling relationship between velocity and force is found to be valid above depinning. However, when one enters the plastic regime, a peak appears in the differential curves of VFD and transverse diffusion occurs above depinning. Furthermore, history dependence is found in the plastic regime.