差分流线扩散法的局域稳定性分析

本文讨论差分流线扩散法的局部稳定性分析，在理论上证明了该方法依旧保持着流线扩散法扰动局部影响的特性。     

化合物半导体-绝缘体界面的界面态(续)

 三、界面态连续体的动态响应和分布多年来的大量研究结果表明把界面态处理为局域在半导体界面平面处的经典理论完全不能够解释化合物半导体-绝缘体界面的行为特点,从而使人们逐渐认识到界面态的空间分布特征.图3为半导体界面的能带结构示意图.在实际的I-S界面上,界面态是在绝缘体-半导体界面附近,在能量上和空间上的连续分布体(如图中点所示). 这里以n型半导体为例,通过绝缘体中的界面态对电子的捕获和发射过程说明界面态动态响应的特点.由于势垒△Ec的存在,空间分布的界面态与电子的作用只能依介量子力学的隧道效应得以进行.     

一类非经典扩散方程整体解的存在唯一性及长时间行为

本文讨论非经典扩散方程第一初边值问题整体解的存在唯一性及长时间行为，建立了一系列新的结果，较好地改进许多已有的结论．     

电沉积n—CdSe在多硫溶液界面上的电荷转移机理

通过测定平带电位,澄清了OH~-离子在CdSe电极上的吸附情况,发现在S、S~(2-)、OH~-溶液中S~(2-)离子优先吸附,结合旋转环盘电极测量,证明n-CdSe电极在多硫溶液界面上的电荷转移过程。     

Compact Single-Stage Femtosecond Multipass Ti：Sapphire Amplifier at 1 kHz with High Beam Quality

A compact femtosecond Ti：sapphire amplifier system is reported using single-stage multipass configuration with high beam quality. A high dispersion glass stretcher and a pair of double prisms for compression are introduced based on broadband femtosecond seed pulses. The non-grating-based pulse stretcher and compressor are advantageous to increase high beam quality and to reduce the high-order dispersion. A Gaussian filter is used to reduce the gain narrowing effect in amplification. The compact femtosecond Ti：sapphire nine-pass amplifier delivers pulses with a duration of 26 fs and an energy of 800μJ at 7mJ pumping pulses energy at I kHz. The 1-kHz femtosecond amplifier with high beam quality and high stability is very suitable for ultrafast physics research applications, such as attosecond science, ultra-precision micromachining, and THz wave generation.     

In Situ Observation of Skeletal Shape Transition during BaB2O4 Crystal Growth in High-Temperature Solution

The transition from a fiat solid-liquid interface to a skeletal shape during BaB2O4 （BBO） single crystal growth in Li2B4O7 flux is observed in real time by an optical high-temperature in-situ observation system. The movement of crystal step is also investigated. The observation results demonstrate that the steps propagate along and parallel to the fiat interface when the crystal size is small. Nevertheless, they will ‘bend＇ close to the face centre if the crystal size becomes greater. Atomic force microscopy reveals that more deposition places near the face centre give rise to the bending of advancing steps and thus the formation of a vicinal interface structure. Measurements of step velocity show that the velocity keeps nearly constant at different moments for one specific step, whereas the step on a newly formed layer advanced faster than that on a previously formed one when the crystal size is larger than 210μm or so. Thus interracial morphological instability occurs and a skeletal interface is obtained.     

^1H自旋扩散方法研究离子化聚氨酯的相态结构

本文用改进的Goldman-Shen脉冲序列研究了聚丁二烯加MDI离子化聚氨酯体系中磁化矢量的自旋扩散过程,通过一些合理的简化,求解了扩散方程,得到了一种可定量的求出多相高聚物微区尺寸的简便方法.