Transient Hole Trapping in Individual GeSi Quantum Dot Grown on Si（001） Studied by Conductive Atomic Force Microscopy

Electrical properties of individual self-assembled GeSi quantum dots grown on Si substrates are investigated by using conductive atomic force microscopy at room temperature. By controlling the bias voltage sweep in a certain fast sweep rate range, a novel current peak is observed in the current-voltage characteristics of the quantum dots. The current peaks are detectable only during the backward voltage sweep immediately after a forward sweep. The current peak position and intensity are found to depend strongly on the voltage sweep conditions. This kind of current-voltage characteristic under fast sweep is very different from the ordinary steady state current behaviour of quantum dots measured previously. trapping in the potential well formed bottom Si substrate. The origin of this phenomenon by the quantum dot sandwiched can be attributed to the transient hole between the native oxide layer and the     

纪念普郎克发现量子论100周年

简要地回顾了普郎克发现量子论和由量子论发展为量子力学的简明历程,以及量子力学对科学和人类社会的贡献,讨论了科学创新的评价标准问题,指出量子力学应得到最高的评价,亦即是美学评价标准、学术评价标准和实践评价标准的统一,还讨论了江泽民主席所提出的“三个代表”的理论,指出这一理论应成为评价一切科学工作的根本标准,也是评价我国各方面工作的根本标准,指出我国科学工作除了要集中力量于解决足以影响国民经济或国防建设的全局的8－10个重大科学技术问题外,还要集中一定的力量于看起来是“无用”的基础研究,当前正在发展中的物理学的第四次大突破,就是值得关注的问题之一。     

论黑体辐射定律的基础

至今从考察单色振动的、既吸收又发射辐射能量之线性振子出发的关于黑体辐射谱能量分布公式的推导,正如曾多次强调的那样,有一个非常敏感的缺陷。为了确定辐射强度对温度的依赖关系,振子的能量一方面同空间中自由传播的波动辐射的强度联系起来,另一方面又被用作计算此种振子所构成体系之熵的基础。     

Quantum Effect in the Mesoscopic RLC Circuits with a Source

The research work on the quantum effects in mesoscopic circuits has undergone a rapid development recently, however the whole quantum theory of the mesoscopic circuits should consider the discreteness of the electric charge. In this paper, based on the fundamental fact that the electric charge takes discrete values, the finite-difference Schrodinger equation of the mesoscopic RLC circuit with a source is achieved. With a unitary transformation, the Schrodinger equation becomes the standard Mathieu equation, then the energy spectrum and the wave functions of the system are obtained. Using the WKBJ method, the average of durrents and square of the current are calculated. The results show the existence of the current fluctuation, which causes noise in the circuits. This paper is an application of the whole quantum mesoscopic circuits theory to the fundamental circuits, and the results will shed light on the design of the miniation circuits, especially on the purpose of reducing quantum noise coherent controlling of the mesoscopic quantum states.     

Probabilistic Teleportation of an Arbitrary Three-Level Two-Particle State and Classical Communication Cost

We propose a scheme to probabilistically teleport an unknown arbitrary three-level two-particle state by using two partial entangled two-particle states of three-level as the quantum channel. The classical communication cost required in the ideal probabilistic teleportation process is also calculated. This scheme can be directly generalized to teleport an unknown and arbitrary three-level K-particle state by using K partial entangled two-particle states of three-level as the quantum channel.     

各向同性谐振子升降算符的矩阵元

重新定义各向同性谐振子的四类升降算符后，计算了它们的矩阵元，并且给出了归一化常数． 关键词：     

德布罗意波及其干涉

介绍了德面罗意物质波的假设和实验验证，介绍了原子物质波的干涉和干涉仪的新成果。     

理论,批判和哲学

 物理学中的第一步 我愿意把我对早年物理学的回忆与理论物理学的方法问题联系起来,人们可使用多种方法,有些人构造唯象理论,有些人思考严格的数学图式,还有些人则作哲学思索,如此等等,我想以我在那段物理时期的经验来分析这种种不同的方法。 我刚进大学不久,当时在慕尼黑大学理论物理系任教的索末菲教授来到我的房间,问我:“哎,你对原子物理感兴趣,你愿意试着解题吗?”     

Calculation of Quantum Probability in O（2,2） String Cosmology with a Dilaton Potential

The quantum properties of O（2,2） string cosmology with a dilaton potential are studied in this paper. The cosmological solutions are obtained on three-dlmensional space-time. Moreover, the quantum probability of transition between two duality universe is calculated through a Wheeler-De Witt approach.     

Novel vertical stack HCMOSFET with strained SiGe/Si quantum channel

A novel vertical stack heterostructure CMOSFET is investigated, which is structured by strained SiGe/Si with a hole quantum well channel in the compressively strained Si量子信道 异质结构 CMOSFET 量子论 量子阱strained SiGe/Si, quantum well channel, heterostructure CMOSFET, poly-SiGe gateProject supported by the Preresearch from National Ministries and Commissions (Grant Nos 51408061104DZ01, 51439010904DZ0101).2/2/2006 12:00:00 AM2006-01-022006-03-16A novel vertical stack heterostructure CMOSFET is investigated, which is structured by strained SiGe/Si with a hole quantum well channel in the compressively strained Sil-xGex layer for p-MOSFET and an electron quantum well channel in the tensile strained Si layer for n-MOSFET. The device possesses several advantages including： 1） the integration of electron quantum well channel with hole quantum well channel into the same vertical layer structure; 2） the gate work function modifiability due to the introduction of poly-SiGe as a gate material; 3） better transistor matching; and 4） flexibility of layout design of CMOSFET by adopting exactly the same material lays for both n-channel and p-channel. The MEDICI simulation result shows that p-MOSFET and n-MOSFET have approximately the same matching threshold voltages. Nice performances are displayed in transfer characteristic, transconductance and cut-off frequency. In addition, its operation as an inverter confirms the CMOSFET structured device to be normal and effective in function.