Nonlinear properties of quantum dot semiconductor optical amplifiers at 1.3 μm： errata

The authors regret that one of the coauthors was inadvertently omitted in the previous paper. E. Varene was a member of the Institut fur Festk6rperphysik at the Technische Universitat Berlin and contributed to the results on cross-phase modulation.     

Magnetoabsorption spectra of magnetoexciton transitions in GaAs/Ga0.7Al0.3As quantum wells

The internal transitions and absorption spectra of confined magnetoexcitons in GaAs/Ga0.TA10.aAs quan- tum wells have been theoretically investigated under magnetic fields along the growth direction of the semiconductor heterostructure. The magnetoexciton states are obtained within the effective-mass ap- proximation by using a variational procedure. The trial exciton-envelope wavefunctions are described as hydrogeniclike polynomial functions. The internal transition energies are investigated by studying the allowed magnetoexcitonic transitions using terahertz radiation circularly polarized in the plane of the quantum well. The intraexcitonic magnetoabsorption to 2p^± like magnetoexciton states as functions of the coefficients are obtained for transitions from 1s-like applied magnetic field.     

IBFM中费米子算符的表达式

本短文给出了包含g玻色子的IBFM中费米子算符的表达式.     

量子蒙特卡罗方法及其应用

量子体系的蒙特卡罗研究近十多年来非常活跃，并取得了很多富有意义的成果．量子蒙特卡罗方法愈来愈受到人们的关注．本文结合量子蒙特卡罗方法的建立和发展介绍了它的基本思想．在对几种具体方法作介绍的同时，还分析了它们特点．文中还对超导、主要是高温超导电性研究中的一些有益的量子蒙特卡罗工作作了介绍．最后讨论了量子蒙特卡罗方法存在的主要问题，并展望了量子蒙特卡罗方法的发展前景．     

Modulation Spectroscopy of GaAs Covered by InAs Quantum Dots

Contactless electroreflectance has been employed at room temperature to study the Fermi level pinning at undoped-n^ GaAs surfaces covered by 1.6 and 1.8 monolayer (ML) InAs quantum dots (QDs).It is shown that the 1.8 ML InAs QD moves the Fermi level at GaAs surface to the valence band maximum by about 70 meV compared to bare GaAs,whereas 1.6 ML InAs on GaAs does not modify the Fermi level.It is confirmed that the modification of the 1.8 ML InAs deposition on the Fermi Level at GaAs surface is due to the QDs,which are surrounded by some oxidized InAs facets,rather than the wetting layer.     

电子波在量子阱势垒上方的局域的束缚：一种法布里—珀罗电子滤波器

最近，电子态在量子阱垒上方的局域和束缚已为实验证实，这是电子的波动性和干波效应的一种直接实验证，试图介绍这种所谓“正能量”束缚态的形成机制，以引起我国学者注意。     

V2的泡利自旋阵表示

在用矩阵法求解二维伊辛模型时，需要用泡利自旋矩阵来表示Ｖ２矩阵，本文给出该表示的一种推导方法。     

金属薄膜和超导体

来自中国和美国的科学家用量子工程技术，制造出厚度仅有20～30个原子的铅晶体薄膜，然后测试了这些薄膜进入超导态的转变温度，发现转变温度随薄膜的厚度有规律地改变，膜越薄，超导转变温度越高．一篇相关的研究评述指出，有些金属（比如银）的大块状态不超导，这些结果提出了将这些金属用量子工程技术转变为超导体的可能性。