Effects of Rapid Thermal Processing on Microstructure and Optical Properties of As-Deposited Ag2O Films by Direct-Current Reactive Magnetron Sputtering

（111） preferentially oriented Ag2O film deposited by direct current reactive magnetron sputtering is annealed by rapid thermal processing at different annealing temperatures for 5 min. The film microstructure and optical properties are then characterized by x-ray diffractometry, scanning electron microscopy, and spectrophotometry, respectively. The results indicate that no clear Ag diffraction peak is discernable in the Ag2O film annealed below 200°C. In comparison, the Ag2O film annealed at 200°C begins to exhibit characteristic Ag diffraction peaks, and in particular the Ag2O film annealed at 250°C can demonstrate enhanced Ag diffraction peaks. This implies that the threshold of the thermal decomposition reaction to produce Ag particles is approximately 200°C for the Ag2O film. In addition, an evolution of the film surface morphology from compact and pyramid-like to a rough and porous structure clearly occurred with increasing annealing temperature. The porous structure might be attributable to the escape of the oxygen produced during annealing, while the rough surface might originate from the reconstruction of the surface. The dispersion of interference peak intensity in the reflectance and transmission spectra could be attributed to the Ag particles produced. The lowered crystallinity and Ag particles produced induce a lattice defect, which results in an enhanced transmissivity in the violet region and a weakened transmissivity in the infrared region.     

Effect of Annealing on Microstructure and Electrical Characteristics of Doped Poly （3-Hexylthiophene） Films

The effect of annealing on the microstructure and electrical characteristics of poly （3-hexylthiophene） （P3HT） films doped with very small amounts of the electron acceptor 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane （F4-TCNQ） is studied. X-ray diffraction and UV-vis spectrum studies show that unlike the pure P3HT film, the thermal treatment on the doped fihns under an Ar atmosphere can effectively enhance the crystalline order of P3HT films, as well as successfully facilitate the orientation of the polymer chains. This improvement is attributed to the electrostatic force between P3HT and F4-TCNQ molecules. This force induces the polymer chains to crystallize and orient during the annealing process. As a result, annealing significantly improves performance, especially for the Ion/Ioff ratio of the TFTs based on the doped P3HT films.     

不同衬底和CdCl2退火对磁控溅射CdS薄膜性能的影响

在科宁7059玻璃, FTO, ITO, AZO四种衬底上磁控溅射CdS薄膜, 并在CdCl₂+干燥空气380 ℃退火, 分别研究了不同衬底和退火工艺对CdS薄膜形貌、结构和光学性能的影响. 扫描电子显微镜形貌表明: 不同衬底原位溅射CdS薄膜的形貌不同, 退火后相应CdS薄膜的晶粒度和表面粗糙度明显增大. XRD衍射图谱表明: 不同衬底原位溅射和退火CdS薄膜均为六角相和立方相的混相结构, 退火前后科宁7059玻璃, FTO, AZO衬底上CdS薄膜有 H(002)/C(111) 最强衍射峰, ITO衬底原位溅射CdS薄膜没有明显的最强衍射峰, 退火后出现 H(002)/(111) 最强衍射峰. 紫外-可见分光光度计分析表明: AZO, FTO, ITO, 科宁7059玻璃衬底CdS薄膜的可见光平均透过率依次减小, 退火后相应衬底CdS薄膜的可见光平均透过率增大, 光学吸收系数降低; 退火显著增大了不同衬底CdS薄膜的光学带隙. 分析得出: 上述结果是由于不同衬底类型和退火工艺对CdS多晶薄膜的形貌、结构和带尾态掺杂浓度改变的结果. 关键词： CdS薄膜 磁控溅射 退火再结晶 带尾态     

相场方法研究定向退火条件下柱状晶粒的形成过程

根据晶界迁移率与温度的关系,将晶粒长大过程控制在一定宽度的热区内,构建了具有无限大温度梯度且在热区内温度均匀的热区模型,并应用相场方法研究了热区温度和热区宽度对单相多晶材料中柱状晶粒结构形成过程的影响。所得晶粒形貌与实验结果吻合。     

Influences of high-temperature annealing on atomic layer deposited Al2 O3/4H-SiC

High-temperature annealing of the atomic layer deposition (ALD) of Al2O3 films on 4H-SiC in O 2 atmosphere is studied with temperature ranging from 800℃ to 1000℃. It is observed that the surface morphology of Al2O3 films annealed at 800℃ and 900℃ is pretty good, while the surface of the sample annealed at 1000℃ becomes bumpy. Grazing incidence X-ray diffraction (GIXRD) measurements demonstrate that the as-grown films are amorphous and begin to crystallize at 900℃. Furthermore, C-V measurements exhibit improved interface characterization after annealing, especially for samples annealed at 900℃ and 1000℃. It is indicated that high-temperature annealing in O2 atmosphere can improve the interface of Al2O3 /SiC and annealing at 900℃ would be an optimum condition for surface morphology, dielectric quality, and interface states.     

退火对ZnO薄膜晶体结构和ZnO/p-Si异质结光电性质的影响

采用脉冲激光沉积方法在p-Si(100)衬底卜牛长ZnO薄膜,分别在500℃、600℃和700℃下真空退火,采用X射线衍射仪研究了退火对ZnO薄膜品体结构的影响,并测量了ZnO的面电阻和ZnO/p-Si异质结的、I-V特性曲线.研究表明,随着退火温度的升高,ZnO的(002)衍射峰强度逐渐增大,半峰全宽不断减小,同时薄膜内应力减小,ZnO晶粒尺寸变大.表明高温退火有助于ZnO薄膜结晶质量的提高.在没有光照的条件下,异质结的漏电流随退火温度的增加而增大;用650 nm光照射样品时,600℃退火的样品表现出最明显的光电效应,而过高的退火温度会破坏ZnO/p-Si异质结的界面结构,使其光电流变小.所以,要得到性能良好的光电器件,应选取适当的退火温度.     

退火对含氮氟非晶碳膜结构及光学带隙的影响

采用射频等离子体增强化学气相沉积法,在不同条件下制备了含氮氟非晶碳膜,着重考察了退火温度对膜结构和光学带隙的影响. 研究发现：在350℃时,膜仍很稳定,当退火温度达到400℃时,其内各化学键的相对含量发生很大的改变. 膜的光学带隙随着退火温度的升高而增大,红外和拉曼光谱分析显示其原因是：退火使得膜内F的相对浓度降低,sp²相对含量升高,导致σ-σ^*带边态密度降低. 关键词： 含氮氟非晶碳膜 退火 光学带隙     

高温退火对蓝宝石基片的表面形貌和对CeO缓冲层以及Tl-2212超导薄膜长的影响

研究了蓝宝石(1102)基片在不同温度和时间下退火时表面形貌和表面相结构的变化,以及它对CeO2缓冲层和T1-2212超导薄膜生长的影响.原子力显微镜(AFM)研究表明,在流动氧环境中1000℃温度下退火,蓝宝石(1102)的表面首先局部区域形成台阶结构,然后表面形成叠层台阶结构,随着退火时间的延长.表面发生了台阶合并现象,表面形貌最终演化为稳定的具有光滑平台的宽台阶结构.XRD测试表明,通过高温热处理可以大幅度提高蓝宝石基片表面结构的完整性.在1000℃温度下热处理20 h的蓝宝石(1102)基片上可以生长出具有面内取向的CeO2(001)缓冲层.在具有缓冲层的蓝宝石基片上可以制作出高质量c轴织构的外延11-2212超导薄膜,其临界转变温度(Tc)为104.7 K,液氮温度下临界电流密度(Jc)达到3.5 MA/cm2,微波表面电阻R(77 K,10 GHz)约为390μΩ.     

合成反铁磁Ni81Fe19/Co90Fe10/Ru/Co90Fe10/Ni81Fe19的研究

采用直流磁控溅射方法制备了一系列的合成反铁磁及以其为自由层的自旋阀.研究发现,在Ni81,Fe19与Ru层之间插入适当厚度的Co90Fe10层后,可有效地提高合成反铁磁两磁性层间的反铁磁耦合强度,得到具有饱和场日.更高、饱和磁化强度M.更低、热稳定性更好的合成反铁磁.另外,以这种合成反铁磁作自旋阀的自由层时,可有效提高自旋阀的稳定性.     

Si1-xGex合金半导体中CiCs和CiOi缺陷随Ge含量的变化

采用从头计算(ab initio)的方法对Si和Si1-xGex合金半导体材料中CiCs 缺陷的性质进行探讨,同时也对比调查了CiOi 缺陷在Si和Si1-xGex合金中的性质. 在不同Ge含量的Si1-xGex合金中CiCs和CiOi缺陷的结构都具有较好的稳定性;从能量学角度,Ge原子不能与C或O原子直接成键. CiCs缺陷的A型和B型结构在Si1-xGex合金中表现出的行为基本类似,但是A型结构随着Ge含量的增加形成能逐渐减小,结构越来越稳定,而B型结构的形成能先有所下降后逐渐增加;A型和B型结构的能量差值随着Ge含量的增加先在小范围内变化后迅速下降. CiOi缺陷形成能的变化特征较为复杂. 纯Si体系在1000K及以上温度的等温退火过程中,CiCs缺陷的A型结构会向B型结构转变;Si1-xGex合金在进行等温退火时CiCs缺陷的A型结构的变化特征与退火温度、Ge含量和Ge取代的位置等因素有关.