Excited Stated in ^207Rn

Excited states ^207Rn are investigated via the^196Pt(^16O,Sn)^207 Rn reaction at beam energies from 85 to 95 MeV using techniques of in-beam γ-ray spectroscopy.Measurements of γ-ray excitation function,x-γ and γ-γ-t conincidences are performed with ten BGO(AC) HPGe detectors.Based on these measurements,a level scheme of ^207Rn,including 17 γ-rays and 18 levels,is established.Spins for most of the levels are proposed according to the measured DCO ratios.The level struccture is compared with a weak-coupling calculation using the interaction energies extracted from neighbouring nuclei.     

有机化合物电子光谱中的助色基及其作用机理探讨(Ⅰ)

本文就电子光谱中助色基的作用进行了讨论 ,认为不能一概地认为助色基能使与之相连的生色基最大吸收波长统统发生红移 ,而应具体问题具体分析 :对于n→π 来说 ,一方面助色基的p轨道和生色基的最低π 反键空轨道相互作用 ,使π 反键轨道能量上升 ,另一方面助色基的p轨道和生色基的n轨道正交 ,n轨道能量基本保持不变 ,因此n→π 跃迁能增加 ,吸收波长发生蓝移。对于π→π 跃迁来说 ,助色基的p轨道和生色基的最高π成键轨道相互作用生成的新的最高π成键轨道 ,能量虽然有所升高 ,但升高的程度与π 反键轨道升高的程度相比 ,在一些化合物中π轨道升高程度较大 ,因而π→π 跃迁能减小 ,吸收波长发生红移 ;在另一些化合物中π轨道升高程度较小 ,因而π→π 跃迁能增加 ,吸收波长发生蓝移。     

J/ψ Dissociation in QGP via Multi-gluon Absorption

We propose that the suppression of J/ψ production in relativistic heavy ion collisions may be explained by that J/ψ dissociates via absorbing multi-gluons in the environment of quark-gluon-plasma (QGP) where abundance of gluons is expected.     

静压下半导体微腔内激子与光子行为的研究

由于腔模与激子对压力的依赖关系不同,所以可以选择不同的压力使激子和光场处于不同的耦合状态,从而实现对耦合的调谐。利用这种办法,我们观测到了代表激子与光场强耦合作用的Rabi分裂。由于在我们现有样品结构中压力对激子本征行为的影响很小,与以前报道的温度、电场等调谐方式相比,这种调谐方法不仅可以有效地调谐半导体微腔内激子与腔模的耦合程度,而且能够保持激子的本征性质在整个调谐过程中基本不变。这有助于研究在强耦合过程中激子极化激元的本征性质。将实验结果与压力下激子与腔模耦合理论进行拟合,得出了正确的Rabi分裂值。     

Ca(NO3)2•4H2O-catalysed Biginelli Reaction: One-pot Synthesis of 1,2,3,4-Tetrahydropyrimidin-2-ones/pyrimidine-2-thiones under Solvent-free Conditions

The synthesis of 1,2,3,4-dihydropyrimidinone/thione derivatives was achieved in good to excellent yields using calcium(II) nitrate as catalyst to promote the Biginelli three-component condensation reaction from a diversity of aromatic aldehydes, β-keto compounds and urea or thiourea. The reaction was carried out under solvent-free conditions.     

Time—Resolved Photoluminescence Studies of AlInGaN Alloys

We study the two samples of AlInGaN,i.e.,1-μm Gan grown at 1030℃ on the buffer and followed by a 0.6μm-thick epilayer of AlInGaN under the low pressure of 76 Torr and the AlInGaN layer deposited diectly on the buffer layer without the high-temperature GaN layer,by temperature-dependent photoluminescence(PL) spectroscopy and picosecond time-resolved photoluminescence(TRPL) spectroscopy.The TRPL signals of both the samples were fitted well as a stretched exponential decay at all temperatures,indicating significant disorder in the material.We attribute the disorder to nanoscale quantum dots or discs of high indium concentration.Temperature dependence of dispersive exponent β shows that the stretched exponential decay of the two samples comes from dfferent mechanisms.The different depths of the localization potential account for the difference,which is illustrated by the results of temperature dependence of radiative recombination lifetime and PL peak energy.     

半导体激光器在光谱研究中的应用

近年来半导体激光器的发展引人注目，已由红外波段推向可见光区，可靠性和输出功率提高而价格下降，在光谱研究方面的应用也日益广泛。文章介绍了半导体激光器的现状，频率稳定、压缩线宽和调谐波长的方法，以及半导体激光器在吸收光谱、非线性光谱、原子的冷却和光泵浦原子钟等方面的应用。     

酞菁钴薄膜的折射率及吸收特性

通过真空镀法在单晶硅片上制备了酞菁钴薄膜，在波长扫描和入射角可变全自动椭圆偏振光谱仪上研究了ＣｏＰｃ薄膜的椭偏光谱并分析了其电子结构。     

B-Spline with Symplectic Algorithm Method for Solution of Time-Dependent Schrodinger Equations

A B-spline with the symplectic algorithm method for the solution of time-dependent Schrodinger equations （TDSEs） is introduced. The spatial part of the wavefunction is expanded by B-spline and the time evolution is given in a symplectic scheme. This method allows us to obtain a highly accurate and stable solution of TDSEs. The effectiveness and efficiency of this method is demonstrated by the high-order harmonic spectra of one-dimensional atoms in comparison with other references.