绝缘衬底上硅表面载流子的超快动力学研究

利用800 nm波长的飞秒抽运探测技术测量r具有不同单晶硅薄膜厚度的绝缘衬底上硅(SOI)皮秒瞬态反射率变化,并通过基于受激载流子密度和温度变化过程建立的反射率模型讨论了SOI表面载流子的超快动力学过程.研究表明,表面复合速度(SRV)是影响载流子动力学响应的主要因素,且薄膜厚度越小表面复合速度就越大,对应的表面态密度可达到1013cm-2 .对于较小的SRV,受激载流子的超快响应决定了瞬念反射率变化;而对于较大的SRV,晶格温升对瞬态反射率变化的贞献变得显著,使得反射率在更短的时间内恢复并超过初始值.     

Transport properties and anomalous fatigue effect of Ag/Bi0.9La0.lFeO3/La0.7Sr0.3MnO3 heterostructures

The transport properties and fatigue effect of Ag/Bi0.9La0.lFeO3/La0.7Sr0.3MnO3 heterostructures are described. By examining the I-V curves, an anomalous fatigue effect was found and its influences on resistive states were studied. I-V curves combined with C-f spectra were used to directly analyze the transport properties and fatigue effect. Compared to the first I-V cycle state, this structure shows more than one order increase of resistance after 100 cycles of ＂I-V curve training＂. The redistribution of oxygen vacancies in the depletion layer of Ag/Bi0.9La0.lFeO3 is believed to be responsible for the different resistance mechanisms and tenfold magnitude drop in resistance. The resistive switching is understood to be caused by electric field-induced carrier trapping and detrapping, which changes the depletion layer thickness at the Ag/Bi0.9La0.lFeO3 interface.     

从认知理论看实验能力与创新能力的关系

认知心理学理论认为,人的知识与能力的获得实际上就是信息的加工过程,也即是学习者在能力习得过程的对已有经验的刺激反应过程.大学实验不仅培养学生的动手能力,它也是孕育创新能力的培养课程.实验能力与思维方式、年龄、智商、性别、知识积累和培养方式等诸多因素相关,思维方式与思维路径绝对创新力,反之,借助于创新性实验教学可以提高学生的创造性思维.     

多脉冲加载下材料的绝缘特性

利用多脉冲实验平台分别对尼龙与交联聚苯乙烯两种绝缘材料在单脉冲与三脉冲两种不同加载条件下的绝缘特性差异进行初步研究,得到了两种绝缘材料在不同加载条件下沿面闪络场强的统计平均值,结合实验现象对所得实验结果做出了初步分析。通过进行单脉冲与三脉冲加载条件下材料沿面闪络场强的对比实验,为新型绝缘器件设计中相关参数的确定提供了实验依据。     

有机半导体的物理掺杂理论

基于最低未被占据分子轨道（LUMO）和最高被占据分子轨道（HOMO）的高斯态密度分布与载流子在允许量子态中的费米-狄拉克（Fermi-Dirac）分布,提出有机半导体中物理掺杂的理论模型;研究了掺杂浓度、温度和禁带宽度对载流子浓度的影响,并与一些报道的实验结果做了比较.研究发现无论是否掺杂,温度升高时,有机半导体中的载流子浓度都会增大,并且随温度倒数的线性减小而指数增大;对于本征有机半导体,载流子浓度随禁带宽度的增大而指数下降,随高斯分布宽度的平方指数增加;对杂质和主体不同能级关系的掺杂情形下掺杂浓度对载 关键词： 有机半导体 掺杂 高斯态密度 载流子浓度     

重金属Zn、Pb在铜锈环棱螺体内的积累

研究了环境中常见的两种重金属污染物锌(Zn)、铅(Pb)在铜锈环棱螺体内的积累。结果表明:铜锈环棱螺的腹足和内脏团是Pb的主要积累部位,肝脏为Zn的主要积累部位。随着时间变化,进入铜锈环棱螺体内的Pb和Zn可在组织间转移和重新分布。铜锈环棱螺对Zn的富集能力强,实验条件下,肝脏中Zn的含量能随暴露液中Zn浓度、时间等外界条件的变化而变化;在0～10.0mL.L-1的浓度范围,肝脏中Zn浓度与暴露液中Zn浓度呈线形关系。     

Carrier Transport Behaviour of Molecular Doped Poly（N—Vinylcabozole）in Polymer Light—Emitting Diodes

Single-layer polymer light-emitting diodes are prepared from blends of poly(N-vinylcarbozole)(PVK) doped with tris(8-hydroxy-quinoline)aluminium(Alq3) of 2wt%(sample a)and 0.2wt%(sample b).The onset of PVK transient electroluminescence(EL) is delayed with respect to that of Alq3 in sample a under pulsed excitation,while the EL onsets of Alq3 and PVK in sample b are simultaneous.The total carrier mobility of the Alq3-rich regions in sample a is larger than that of the PVK-rich regions.However,the total carrier mobility is homogeneous in sample b.the phase image of atomic force microscopy and photoluminescence spectra of samples a and b indicate that the separated phase of samples a and b exists in the PVK-rich and Alq3-rich regions.The variance of the doping concentration and separated phase in blends results in the different carrier transport mobility of Alq3-rich and PVK-rich regions.     

Ge掺杂GaN晶体双光子诱导超快载流子动力学的飞秒瞬态吸收光谱研究

本文利用飞秒瞬态吸收光谱技术,在近红外波段对Ge掺杂GaN(GaN:Ge)晶体进行了超快载流子动力学研究.在双光子激发下,瞬态吸收动力学呈现出双指数衰减,其中慢过程寿命随着泵浦光强增加而增加.瞬态吸收响应随着探测波长而单调增强,并在约1050nm处由空穴吸收占据主导.利用简化模型模拟载流子动力学发现,GaN:Ge中碳杂质形成的深受主能级对空穴有很强的俘获能力,并且引起了缺陷发光.在较适中的载流子注入下,n型GaN中的载流子寿命可以通过控制缺陷浓度和载流子浓度来共同调控,使其可应用于发光二极管和光通信等不同的领域.     

Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time

Semi-insulating （SI） GaN is grown using N2 as the nucleation layer （NL） carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using 1-12 and N2 as the NL carrier gas is investigated in our experiment. It is found that the sheet resistance of unintentionally doped GaN can be increased from 10^4 Ω/sq to 10^10 Ω/sq by changing the NL carrier gas from 1-12 to N2 while keeping the other growth parameters to be constant, however crystal quality and roughness of the tilm are degraded unambiguously. This situation can be improved by optimizing the NL annealing time. The high resistance of GaN grown on NL using N2 as the carrier gas is due to higher density of threading dislocations caused by the higher density of nucleation islands and small statistic diameter grain compared to the one using 1-12 as carrier gas. Annealing the NL for an optimized annealing time can decrease the density of threading dislocation and improve the tilm roughness and interface of AlGaN/GaN without degrading the sheet resistance of as-grown GaN signiticantly. High-quality SI GaN is grown after optimizing the annealing time, and AlGaN/GaN high electron mobility transistors are also prepared.     

Libera BPM在BEPCⅡ调束中的应用

软件无线电技术的发展,不仅带来了现代通信领域的技术革命,同样在加速器束测领域中也带来了技术的革新.基于软件无线电技术和数字接收机架构的数字BPM首先在瑞士光源得到了成功的应用,斯洛文尼亚的Instrumentation Tchnologies公司把该项技术进行了市场化并进行了不断改进,形成了现在的Libera系列产品.它集模拟信号采集、模数转换、数字信号处理以及外同步于一体,是一个真正all-in-one的宽带测量系统.它可以完成束流位置的First Turn、Turn by Turn和COD等测量工作.在BEPCⅡ的初期调束中,在电子环和正电子环的束流闭环、储存和积累、故障查处以及同步环的注入残余振荡测量方面,Libera BPM发挥了出色的作用,加快了调束进程.