Calculation of the Safety Factor of the Ohmic HL-2A Single Null Divertor Discharge

The safety most important factor profile is one of the the plasma discharge. For limiter configuration, people usually use the following cylindrical approximation formula to calculate it q（r）=5r^2BT/RIp where r is the minor radius of the plasma toms, R is the major radius （in m） , BT is the toroidal magnetic field （in T）, Ip is the total toroidal current（in MA）.     

N[a,b]类中边界Nevanlinna-Pick插值(I)

用所谓的Hankel向量方法求解N[a,b]函数类中带边界插值数据的Nevanlina-Pick插值(BNP(N[a,b]))问题,并建立BNP(N[a,b])问题与[a,b]上的某种带约束条件的Hausdorff矩量问题之间等价的可解条件以及解之间明确的一一对应关系.这使得当BNP(N[a,b])问题有多解时,能通过带约束条件的矩量问题的可解性准则和解获得BNP(N[a,b])问题的可解性准则和解的参数化描述,而在唯一解的情况下,通过BNP(N[a,b])问题解的存在唯一性准则和唯一解来获得带约束条件的     

-混合序列的不变原理

给出一类较广泛的ρ-混合序列 ,并证明了在一定的矩条件下 ,ρ-混合序列的不变原理成立     

热核破碎中的矩关联和临界现象

本文用蒙特卡罗方法,根据核素表和质量及电荷守恒律,产生热核Au*破碎的各种碎块组态,再对碎块电荷分布作条件矩分析.理论结果很好地再现了电荷分布实验数据中呈现的条件矩间的对数关联;但理论关联行为的导出与临界现象似乎没有联系.     

IPv4/IPv6翻译网关的研究

In this paper, a model of translation gateway is proposed. The communications between IPv4 network and IPv6 network are realized by using the Microsoft intermediate driver technology in environment of Windows 2000.     

转移概率流图的概率理论基础与应用方法（Ⅳ）

本文引入转移概率流图的粘接方法证明了“中止事件仅可能在检出不合格品时发生”是添加相应的中止规则而不改变连续抽样方案原有基本统计特性的充分必要条件。     

气垫转盘测转动惯量时空气粘滞阻力矩的影响

气垫转盘测转动惯量时空气粘滞阻力矩的影响徐军（承德石油高等专科学校０６７０００）一、引言气垫转盘测刚体的转动惯量，厂家提供的测量原理及设备条件，均未考虑空气粘滞阻力矩的影响．测量仪器如图１．其中１为动盘，２为定盘，３为气轴，４为砝码，５为挡光片，６为...     

应用马尔科夫状态转移链的作战航空综合体效能评估

文章阐述了作战航空综合体的相关概念及组成,应用马尔科夫状态转移链建立了作战航空综合体完成典型作战任务时的数学模型,确定了作战效能的评估指标,最后通过具体算例检验了模型的正确性和可行性.     

Effect of Bias Step on the I-V Curve in Double-Barrier AlGaAs/GaAs/AlGaAs Resonant-Tunnelling Devices

We investigate the non-equilibrium electron transport properties of double-barrier AlGaAs/GaAs/AlGaAs resonant- tunnelling devices in nonlinear bias using the time-dependent simulation technique. It is found that the bias step of the external bias voltage applied on the device has an important effect on the final current-voltage （I - V） curves. The results show that different bias step applied on the device can change the bistability, hysteresis and current plateau structure of the I - V curve. The current plateau occurs only in the case of small bias step. As the bias step increases, this plateau structure disappears.