两种方法制备ITO薄膜的红外特性分析

比较了用电束加热蒸发法和直流磁控溅射法制备的氧化锡铟(ITO)薄膜在红外波段的光学特性实验发现,通过直流磁控溅射在常温下制备的ITO薄膜在红外波段折射率稳定、消光系数小,比电子束加热蒸发制备的膜有较高的透过率在波长1550nm附近的透过率可达86%以上,消光系数约为004,方电阻最低为100Ω/□.     

相变光盘介电薄膜ZnS-SiO2 的微结构和光学特性

采用射频磁控溅射法制备了ZnS-SiO₂ 介电薄膜,利用透射电镜和椭偏仪研究了溅射条件对ZnS-SiO₂薄膜微结构和折射率n的影响.研究表明,ZnS-SiO₂薄膜中存在微小晶粒,大小为2～10 nm的ZnS颗粒分布在SiO₂基体中,当溅射功率和溅射气压变化时,ZnS-SiO₂薄膜的微结构和折射率n发生显著变化,微结构的变化是导致折射率n变化的主要原因,通过优化溅射条件可以制备适用于相变光盘的高质量ZnS-SiO₂介电薄膜.     

流体静高压下的锂离子导电性

本文改进实验方法,在0.0001—1.23GPa流体静高压下测量了整片非晶锂离子导体B₂O₃-0.7Li₂O-0.7LiCl-xAl₂O₃(x=0.05;0.15)及其粉末压片的离子电导率及激活体积。发现粉末压片电导率峰值是由非晶微粒间的接触电导及非晶微粒体电导两者叠加;对整片非晶电导率的压力效应用离子迁移通道的物理图象给出初步的微观解释。此外,还观测到氧化铝组分减少使电导率的压力转变点明显降低;测量出不同温度热处理以及300℃等温热处理4—20h后离子电导率-压力曲线的变化规律,仍可归因于非晶态相分离及两种非晶相的先后晶化。 关键词：     

Structural and Electrical Characteristics of Pb（Zr0.53,Ti0.47）O3 Thin Films Deposited on Si （100） Substrates

Pb(Zr0.53, Ti0.47)O3 (PZT) films were directly deposited on Si substrates without a buffer layer by pulsed laser deposition. Only(110)-oriented PZT peaks (other than Si substrate peaks) were observed from the XRD data. The electrical properties of the PZT/Si capacitor were characterized in terms of both the capacitance versus voltage (C-V) and current versus voltage (I-V) measurements. The clockwise trace of the C-V curve shows ferroelectric polarization switching, as is expected. From the I-V curves, the Schottky emission and spacecharge-limited-current behaviour are found to be the mainly leakage current mechanism in a certain electric field range in the negative and positive bias, respectively.     

Deposition of Hydrogen-Free Silicon Nitride Thin Films by Microwave ECR plasma Enhanced Magnetron Sputtering at Room Temperature

Hydrogen-free silicon nitride （SiNx） films were deposited at room temperature by microwave electron cyclotron resonance （MW-ECR） plasma enhanced unbalance magnetron sputtering system. Both Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy are used to study the bonding type and the change of bonding structures of the silicon nitride films. The results indicate that the chemical structure and composition of SiNx films deposited by this technique depend strongly on the N2 flow rates, the stoichiometric SiNx film, which has the highest hardness of 22.9 GPa, could be obtained at lower N2 flow rate of 4 sccm.     

Ultraviolet Luminescence in Mg0.12Zn0.88O Alloy Films

We investigate the origin of ultraviolet （UV） emission from Mg0.12 Zn0.88 O alloy thin films with a wurtzite structure fabricated on c-plane Al2O3 substrates by plasma assisted molecular beam epitaxy. At room temperature, the absorption edge and UV emission band of the Mg0.12Zn0.88O film shift to high-energy side compared with ZnO films. Temperature dependence of the photoluminescence spectra shows that the UV emission is composed of free exciton and neutral donor bound exciton emissions. Two-step dissociation processes of the UV emission are observed with the increasing temperature. The thermal quenching mechanism is attributed to the dissociation of the free exciton from the neutral donor bound exciton in the low temperature region and the dissociation of free electron and hole from the free exciton in the high temperature region.     

Magnetic and Transport Properties of Ferromagnetic Semiconductor GaDyN Thin Film

Magnetic properties and temperature dependence of electrical transport properties of rare-earth-metal Dy-doped GaN thin film are experimentally studied with a superconducting quantum interference device magnetometer and van der Pauw method. It was found that this thin nitride film has both semiconductor properties and ferromagnetism from 1OK to room temperature. The dopant-band (conducting band due to doping) electron conduction dominates the transport properties of this film at low temperatures. These results indicate that Dy-doped GaN is an n-type ferromagnetic semiconductor at room temperature.     

164Lu的三轴超形变核态的理论计算

用三维TRS(totalrouthiansurface)自洽理论对奇奇核164Lu的位能面进行了计算,计算结果与实验上得到的ε2=0.38基本一致,从而从理论上确认了164Lu是三轴超形变核,并且指出了存在三轴超形变带的两个组态. Total routhian surface in~(164)Lu nuclei is calculated according to the three dimensional Total Routhian Surface (TRS) theory. The result of the calculation is in agreement with the experiment. At the same time, two TSD bands could be assigned to the configuration(π\(1/2), α=1/2)(ν\(5/2), α=1/2), (π\(1/2), α=1/2)(ν\(3/2), α=-1/2).     

流动注射荧光光度法研究β-环糊精与吉非罗齐的超分子作用机理及其分析应用

吉非罗齐(Gemfibrozil),化学名为2,2-二甲基-5-(2,5-二甲苯氧基)戊酸,是一种纤维素苯氧芳酸衍生物降脂药,既可降低胆固醇、甘油三酯,又可提升高密度脂蛋白胆固醇水平之双重功效,可视为国内新型高效血脂调节剂之一,降脂作用快,疗效确切,对防治动脉粥样硬化和降低冠心病的发病率及死亡率也有一定作用[1～3].目前,用于吉非罗齐含量测定的方法与技术有高效液相色谱法[4],气相色谱法[5],但其操作繁琐,且灵敏度欠佳.荧光分析法具有灵敏度高,选择性好,方法简捷,重现性好,取样量少,仪器设备简单等优点,广泛应用于生物样品、环境样品、药物等分析与检测.流动注射分析是70年代中期诞生并迅速发展起来的溶液自动在线处理及测定的现代分析技术.它具有微量、密闭、重现性好和快速的优点,且具有广泛的适应性,可与多种检测手段连用,受到越来越多研究者的重视[6,7].因此,建立一种简便、快捷、选择性好、灵敏度高的流动注射荧光光度法用于吉非罗齐的定量分析将极具分析应用价值.本文利用流动注射荧光光度法研究了β-环糊精与吉非罗齐间的超分子相互作用,结果表明β-环糊精、吉非罗齐可形成11的超分子包和物,室温下表观结合常数为7.57×102L/mol.利用水相中β-环糊精对吉非罗齐的荧光增敏作用,建立了水溶液中高灵敏度测定吉非罗齐的流动注射荧光光度法,线性范围为0.032～70μg/mL.检出限为0.96 ng/mL,每小时进样80次.常用片剂赋形剂对测定不产生干扰,应用本法测定药物制剂和血清样中吉非罗齐的含量.