相空间中相互垂直的相干态迭加态以及相应的双模纠缠态研究

相干态是最接近经典态的量子态，而广泛研究的相干迭加态——如奇偶相干态、Schleich的镜像迭加相干态等——则显示更多非经典效应。另外，双模及多模迭加态，特别是所谓的纠缠态，在量子信息处理如量子隐形传态和量子密码术中扮演重要角色。我们就相空间中相互垂直的相干态的迭加态进行讨论，研究其非经典特性，如光子数统计分布、正交分量压缩效应、Wigner分布函数的负性以及由此引入的非经典判别子。结果表明，这一类相干迭加态在满足某种条件下具有亚泊松光子统计分布和正交分量的压缩效应，并且参数变量在一定范围内这两种非经典效应同时存在；这些迭加态的Wigner分布中存在不同程度的负值区域．并与奇偶相干态做出了比较．计算相廊的Wigner函数积分判别子可以定最地分析其负性的深度。     

纠缠态与反聚束效应

纠缠和非经典效应是经典理论所不能解释的非经典现象，两者是否具有关系引起了人们的研究兴趣，已有的研究表明：纠缠和压缩存在着一定关系，有压缩时存在着纠缠，但有纠缠时不一定存在着压缩。但纠缠是否与反聚束效应有关还未研究。本文主要研究了两种形式的纠缠相干态，通过concurrence的方法计算它们的纠缠度、压缩效应和反聚束效应。通过数值计算可以发现一个有意思的现象：这两种形式的纠缠相干态，在适当的条件下，有压缩效应时，没有反聚束效应，有反聚束效应时，没有压缩效应，特别是第二种形式的纠缠相干态，纠缠的大小分别与压缩效应和反聚束效应的强弱存在着一一对应的关系。     

碳分子线基态特性理论研究

从第一原理出发,利用密度泛函理论B3LYP系统研究了碳分子线Cn(n＝3～10)的电子结构特性.对优化结果分析发现,由于离域效应的作用,当n为奇数时,分子线基态为单重态,反之,当n为偶数时,三重态为其稳定的基态.对其电子结构分析可得,随着n的增加,体系能量逐渐降低;同时本文确定了分子线体系最高占据轨道HOMO能量EH、最低未占据轨道LUMO能量EL与n的关系式,即EHn-2＜EHn＜EHn+2,ELn-2＞ELn＞ELn+2.因而碳分子线的费米能级会表现出特有的奇偶性.该工作将有利于准确认识分子器件的伏安特性,设计出良好性能的分子器件.     

离子辐照引起的金属／绝缘体界面混合与相变研究

载能离子穿过固体界面引起界面原子迁移使界面原子混合和物质成分变化，从而导致界面发生材料相变。简要介绍了载能离子辐照引起金属／绝缘体界面混合效应及相变现象的主要实验研究进展、低能离子和高能离子辐照引起金属／绝缘体界面现象差异，并对离子辐照引起界面混合及相变的机制进行了初步探讨。When penetrating an interface between two kind of solids, energetic ions can induce atomic diffusion at both sides of the interface and then result in intermixing, atom re-distribution or composition change, as well as phase transformation. Main progress on the study of intermixing and phase change at metal/insulator interface induced by energetic ion irradiations, the difference of phenomena occurred at metal/insulator interfaces induced by high-and low-energy ions were briefly reviewed. Furthermore, the possible mechanisms related to intermixing and phase change at metal/insulator interface produced by energetic ion irradiations were also discussed in short words.     

Experimental Study of Capillary Effect in Porous Silicon Using Micro-Raman Spectroscopy and X-Ray Diffraction

We investigate the capillary effect and the residual stress evolution in the wetting, drying and rewetting stages of porous silicon using x-ray diffraction and micro-Raman spectroscopy. A reversible capillary effect and an irreversible oxidation effect are the driving forces for the residual stress evolution. The lattice expansion of the porous-silicon layer is observed to decrease slightly by x-ray diffraction and the tensile residual stress increases rapidly by micro-Raman spectroscopy, with the change of about 82 MPa for the oxidation effect and the change of 2.78 GPa (enough for cracking) for the capillary effect. Therefore, the capillary effect plays a major role in the residual stress evolution in the stages. A simple microscopic liquid-bridge model is introduced to explain the capillary effect and its reversibility. The capillary emergence has a close relation with a great deal of the micro-pore structure of porous silicon.