Effects of Annealing on Schottky Characteristics in A1GaN/GaN HEMT with Transparent Gate Electrode

A1GaN/GaN heterostructure transistors are promising for power and switching applications. In addition, the transparent wide band-gap A1GaN/GaN heterostructure systems have received considerable attention to transparent electronics. Nowdays, Al-doped ZnO （AZO） thin film plays an increas- ingly important role in various fields of transparent electronics.The AZO-gated A1GaN/GaN HEMT with good dc characteristics and frequency character- istics has been reported. Annealing is widely used to improve the electri- cal characteristics of A1GaN/GaN HEMTs. It is re- ported that the Schottky leakage current can be re- duced by over four orders of magnitude by annealing in an A1GaN/GaN heterostructure with ITO/Ni/Au electrode. Pei et al. reported that the transparency of Ni/ITO gates of A1GaN/GaN HEMTs has been sig- nificantly improved after annealing. However, the evaluation of Schottky C V characteristics was ab- sent. Up to now, few results are reported on the Schot- tky annealing characteristics of AZO in A1GaN/GaN HEMT. Thus the effects of annealing on the leakage current, transparency and interface states character- istics need further study.     

大厚度钝尾缘翼型的设计研究

本文研究了MW级水平轴风力机叶片内侧翼型的设计准则,采用混合设计方法得到了四种适用于该部位的大厚度钝尾缘翼型:依据一个5 MW风力机的运行特征和性能需求,在不同的设计雷诺数下,以翼型在运行攻角范围内的升力水平为主要气动目标,以升力随雷诺数变化的稳定性为主要约束。RFOIL预测表明,在15°~30°攻角之间,四种翼型的升力系数大致从1.0以近似线性方式增加到1.7,升力曲线随着雷诺数变化稳定,具有良好的变工况特性。     

细水雾衰减目标热辐射的谱带-灰体模型

在火灾防护中为提高热辐射传输计算的效率,建立了多分散细水雾0.8~20μm辐射特性参数数据库,并提出了两种谱带一灰体模型。本文中,辐射特性参数采用数据库调用的方法获取,而细水雾非灰特性采用谱带一灰体模型处理。通过所建三种模型的相对误差和计算效率分析,发现灰体假设模型的相对误差较大,且随水雾光学厚度的增大而增大;而谱带一灰体模型具有很好的精度。总体讲,谱带模型具有最好的精度,但效率最差;灰体假设模型效率最高,但精度最差;只有谱带一灰体模型既兼顾了效率又兼顾了精度。     

谐振式集成光学陀螺解调特性分析

基于激光器频率谱检测技术,沿着光的传输方向分析了光波在谐振式集成光学陀螺系统中的传播,结合输入信号特征,建立频域内的数学模型,通过数值仿真和实验得到了调频检测系统下的解调曲线。按照光的传输方向：激光器、声光晶体移频器、光波导环形谐振器、探测器,利用贝塞尔函数展开和光场耦合模理论分析了谐振式集成光学陀螺解调特性,及其调频调制检测系统解调输出信号与谐振频率偏差之间的关系。通过数值计算,分析了解调曲线的变化规律,得到了施加在激光器压电陶瓷驱动器上调制波形的最佳调制系数。在实验上搭建了激光器频率调制解调技术系统,得到了解调曲线。数值仿真和实验结果表明,当调制系数M=2时,线性工作区间斜率最大,解调曲线最好。实测形状与理论分析结果相符,从解调信号得到±2×10³ rad/s的陀螺动态范围。     

电控液晶光阀中的指向矢分布特性

液晶分子具有介电和光学各向异性,在外电场作用下,液晶指向矢将会重新分布,具有高效的光学相位调制能力.本文从实验和理论角度对电控液晶光阀的光学调制特性进行了研究,结果表明:光阀阈值电压约为4V,且当外加电压高于阈值电压时,液晶光阀的透射强度随外加电压表现出非周期性特性.根据液晶连续体弹性理论,对电场作用下液晶光阀的指向矢分布特性进行数值分析,分析结果表明液晶光阀对透射光强的非周期调制特性取决于液晶体系的偏转状态,为研究液晶的偏振光调制特性提供理论依据及实验基础.     

纳米TiO2∶Zn薄膜电极紫外光电特性研究

采用sol-gel法制备了Zn2+掺杂的锐钛矿相纳米TiO2薄膜电极.通过光电流作用谱和电流-电位（I-U）曲线研〖WTBZ〗究了掺杂不同浓度Zn2+的TiO2薄膜电极的光电特性.由光电流作用谱可知，Zn2+的掺杂可显著影响薄膜电极的光电流大小，且掺杂的最佳浓度与薄膜晶粒尺度有关.在320nm单色光照射下，掺杂浓度（摩尔浓度）为0.1％的薄膜电极光电流最大，与未掺杂的本征薄膜电极相比增幅达40％.I-U曲线表明，光照下，随电极电位由正到负逐渐降低，不同掺杂浓度的TiO2薄膜电极中均出现了阳极电流向阴极电流转换的现象，且Zn2+掺杂浓度可影响电极阳极电流的初始电位.另外，无光照的暗态下，各薄膜在负电位区域观察到了相似的随电位降低而迅速增大的阴极暗电流.     

外电场下二氧化锆的分子结构及其特性

对O原子采用6-311++G*基组,Zr原子采用aug-cc-pVTZ-PP基组,利用密度泛函(B3P86)方法优化得到了ZrO2分子的稳定构型,并研究了不同外电场(0—0.025 a.u.)作用下ZrO2基态分子键长、能量、电荷分布、偶极矩和能级的变化规律.在优化构型的基础上,利用含时密度泛函(TD-B3P86)方法研究了ZrO2分子在外电场作用下前6个激发态的激发能、跃迁波长和振子强度的激发特性.研究结果表明:随着电场强度的增大,Zr—2O的键长增大,而Zr—3O的键长均匀减少,总能量降低,偶极矩增大;最高占据轨道能量基本保持不变,最低未占据轨道和能隙均减小.电场的增大使得激发能减小,各个激发态跃迁波长均发生不同程度的红移现象,因而,利用外电场可以控制ZrO2的发光光谱范围在可见-红外区域扩展.     

Transport properties and anomalous fatigue effect of Ag/Bi0.9La0.lFeO3/La0.7Sr0.3MnO3 heterostructures

The transport properties and fatigue effect of Ag/Bi0.9La0.lFeO3/La0.7Sr0.3MnO3 heterostructures are described. By examining the I-V curves, an anomalous fatigue effect was found and its influences on resistive states were studied. I-V curves combined with C-f spectra were used to directly analyze the transport properties and fatigue effect. Compared to the first I-V cycle state, this structure shows more than one order increase of resistance after 100 cycles of ＂I-V curve training＂. The redistribution of oxygen vacancies in the depletion layer of Ag/Bi0.9La0.lFeO3 is believed to be responsible for the different resistance mechanisms and tenfold magnitude drop in resistance. The resistive switching is understood to be caused by electric field-induced carrier trapping and detrapping, which changes the depletion layer thickness at the Ag/Bi0.9La0.lFeO3 interface.     

Matlab在伏安特性实验中的应用

采用Matlab分别对线性电阻、发光二极管、太阳能电池的伏安特性实验数据进行曲线拟合,为理论分析与实验数据处理提供了方便。     

Anomalous Dispersion Behavior of Staggered Arranged Metal Nanowire Arrays

The dispersion relations of staggered arranged metal nanowire arrays are numerically investigated. It is demonstrated that the structure can support the propagation of plasmon modes with zero and negative group velocities derived directly from the dispersion curves, apart from normal plasmon modes with positive group velocities. Furthermore, the effects of the structural parameters on the dispersion behaviors of plasmon modes are also examined.