超微半导体AgBr的量子尺寸效应

本文研究了间接带半导体ＡｇＢｒ由于空间尺寸的限制产生的吸收，荧光兰移，激子振子强度增强的量子尺寸效应，观察到旋－轨道分裂带至导带的２８４ｎｍ吸收峰，经硫处理的Ａｇｂｒ直接激子吸收峰从３１０ｎｍ移至３０１ｎｍ。相应的荧光从３４０ｎｍ移至３２４ｎｍ，同时在８５０ｎｍ处产生了一新的荧光带。     

极端条件下的核结构

本文评述了原子核结构研究的新进展和面临的新挑战．指出当今原子核结构发展方向的基本特点是“极端条件下的核结构”,它的主要内容是高自旋态物理和远离稳定线直至滴线原子核两个方面．而这些新发展方向,有新一代超级γ谱探测器系统和放射性核束加速器的发展和建造做为坚实的技术保证． This paper reviews the new developments and new challenges for the nuclear structure studies. It points out that the developments of the nuclear structure today is characterized by the term u Nuclear Structure in Exotic Conditions",the main contents of which are the high spin physics and physics for the nuclei far from the stability line and up to drip lines.All these new developments are solidly ensured by the developments and the constructions of super γ- ray spe ctrometer...     

变压加载对直接甲醇燃料电池阳极性能的影响（英文）

为评价直接甲醇燃料电池(DMFC)阳极的稳定性,利用扫描电化学显微镜和常规电化学技术,研究了变压加载过程中DMFC阳极性能的变化。结果表明,在探针扫描过程中,经不同电压加载后的DMFC阳极表面的扫描电流呈相似的锯齿状分布。当阳极加载2h,随加载电位升高,扫描峰电流的数量减少,对应峰电流的数值则先增大再减小,表明阳极的催化活性处于不均匀分布状态且随加载时间延长和加载电位升高而逐渐降低。在不同加载电位下,随加载时间延长,循环伏安曲线上的正向和反向电流峰先负移再正移,但抗CO性能持续降低。DMFC阳极在0.6V下分别加载16h和72h后,催化剂粒径由3.4nm分别增大到3.6nm和4.4nm。在0.8V下加载72h后,Pt/Ru重量比由2.0增加到3.9。变压加载使催化活性的不均匀分布加剧催化剂粒径长大,Ru流失加快,从而导致阳极催化性能衰减。     

Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer

A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure demonstrates significant enhancement of two-dimensional electron gas （2DEG） mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm.     

Excited State Properties of Fluorine-Substituted Hexabenzocoronene： A Quantum-Chemical Characterization

The first fluorine-substituted hexabenzocoronene has been synthesized and its electronic structure and optical properties have been reported [Q. Zhang, et al., Org. Lett. 7 （2005） 5019]. In this letter, the electronic structure and excited state properties of the fluorine-substituted hexabenzocoronene are studied with quantum chemistry method as well as the transition and the charge difference densities. The transition densities show the orientations and strength of the dipole moments and the charge difference densities reveal the orientation and results of the intramolecular charge transfer. The calculated transition energies and oscillator strengths are consistent with the experimental data, and the theoretical results of transition and charge difference densities are valuable to understanding the excited state properties of the fluorine-substituted hexabenzocoronene.     

Analysis of Three Coupled Defects in One-Dimensional Photonic Bandgap Structure

The mutual interaction of three different defects in photonic crystals is studied theoretically. A theoretical model based on the classical wave analogue of the tight-binding （TB） picture is applied to the structure. We obtain analytic expressions for the eigenfrequencies and eigenmodes, from which the transmissions at resonance are derived. Based on this, a new type of the photonic quantum-well structure is investigated and its possible application is discussed. The TB predictions are compared with the transfer matrix method simulation results.     

随机介质ZnO激光的一种整体效应模型

从实验现象出发建立了无序介质激光的一种整体散射效应物理模型，认为无序介质激光是无序介质中局域-非周期-类结构与相匹配的抽运光相互作用的结果.并以ZnO粉末激光参数为例进行数值模拟，结果与实验定性符合. 关键词： 无序增益介质 局域-非周期-类结构     

(1,2-μ2-L1)(1,2-μ2-L2)十羰基合三锇振动光谱的理论计算[L1, L2=H, Cl, Br, I]

用密度泛函理论和从头计算(abinitio)方法,在B3LYP CEP 4G ,B3LYP LanL2DZ和RHF CEP 4G ,RHF LanL2DZ水平上,全优化计算了(1,2 μ2 H) (1,2 μ2 L)Os3(CO) 1 0 (L :Cl,Br,I)的分子几何构型和电子结构;在RHF CEP 4G水平上,全优化计算了(1,2 μ2 L) 2 Os3(CO) 1 0 (L :H ,Cl,Br,I)的分子几何构型和电子结构。计算结果表明,在这些体系中,电子由Os(CO) 3向Os(CO) 4转移。用RHF CEP 4G对这七个簇合物进行了简正振动频率分析,在计算得到振动频率及吸收强度的基础上,模拟了稳定平衡结构的红外光谱图,并对计算结果进行了比较和讨论。     

多孔氧化铝薄膜的纳米结构和光谱特性研究

利用阳极氧化的方法制备出几种表面结构和尺度不同的多孔氧化铝薄膜,用原子力显微镜扫描获得了这些薄膜表面的纳米结构图像,并采用光谱仪测定了它们的反射光谱。实验表明,平均孔径为26和39 nm的多孔氧化铝薄膜表面具有独特的反射光谱,在500至1 000 nm波长范围内呈周期性地密集峰—谷分布,峰—谷的密集度或数量取决于薄膜表面纳米结构的尺度。讨论了纳米结构尺度与反射光谱之间的相互关系,并给出了适当的解释。     

ZnO/A1lN/Si(111)薄膜的外延生长和性能研究

用常压金属化学气相沉积法(MOCVD)在Si(111)衬底上制备了马赛克结构ZnO单晶薄膜.引入低温AlN缓冲层以阻止衬底氧化、缓解热失配和晶格失配.薄膜双晶X射线衍射2θ/ω联动扫描只出现了Si(111)、ZnO(000l)及AlN(000l)的衍射峰.ZnO/AlN/Si(111)薄膜C方向晶格常量为0.5195 nm,表明在面方向处于张应力状态;其对称(0002)面和斜对称(1012)面的双晶X射线衍ω摇摆曲线半峰全宽分别为460"和1105";干涉显微镜观察其表面有微裂纹,裂纹密度为20 cm-1;3 μm×3μm范围的原子力显微镜均方根粗糙度为1.5 nm激光实时监测曲线表明薄膜为准二维生长,生长速率4.3μm/h.低温10 K光致发光光谱观察到了薄膜的自由激子、束缚激子发射及它们的声子伴线.所有结果表明,采用金属化学气相沉积法并引入AlN为缓冲层能有效提高Si(111)衬底上ZnO薄膜的质量.