AAS测定纸巾中的铅和镉

本文采用原子吸收光谱法测定纸巾中铅、镉的含量。结果表明，不同纸巾中的污染元素铅、镉的含量不同。同时还对一种纸巾的铅、镉元素进行了回收实验，回收率在92％-104％之间。     

Structural and Electrical Characteristics of Pb（Zr0.53,Ti0.47）O3 Thin Films Deposited on Si （100） Substrates

Pb(Zr0.53, Ti0.47)O3 (PZT) films were directly deposited on Si substrates without a buffer layer by pulsed laser deposition. Only(110)-oriented PZT peaks (other than Si substrate peaks) were observed from the XRD data. The electrical properties of the PZT/Si capacitor were characterized in terms of both the capacitance versus voltage (C-V) and current versus voltage (I-V) measurements. The clockwise trace of the C-V curve shows ferroelectric polarization switching, as is expected. From the I-V curves, the Schottky emission and spacecharge-limited-current behaviour are found to be the mainly leakage current mechanism in a certain electric field range in the negative and positive bias, respectively.     

Deposition of Hydrogen-Free Silicon Nitride Thin Films by Microwave ECR plasma Enhanced Magnetron Sputtering at Room Temperature

Hydrogen-free silicon nitride （SiNx） films were deposited at room temperature by microwave electron cyclotron resonance （MW-ECR） plasma enhanced unbalance magnetron sputtering system. Both Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy are used to study the bonding type and the change of bonding structures of the silicon nitride films. The results indicate that the chemical structure and composition of SiNx films deposited by this technique depend strongly on the N2 flow rates, the stoichiometric SiNx film, which has the highest hardness of 22.9 GPa, could be obtained at lower N2 flow rate of 4 sccm.     

Ultraviolet Luminescence in Mg0.12Zn0.88O Alloy Films

We investigate the origin of ultraviolet （UV） emission from Mg0.12 Zn0.88 O alloy thin films with a wurtzite structure fabricated on c-plane Al2O3 substrates by plasma assisted molecular beam epitaxy. At room temperature, the absorption edge and UV emission band of the Mg0.12Zn0.88O film shift to high-energy side compared with ZnO films. Temperature dependence of the photoluminescence spectra shows that the UV emission is composed of free exciton and neutral donor bound exciton emissions. Two-step dissociation processes of the UV emission are observed with the increasing temperature. The thermal quenching mechanism is attributed to the dissociation of the free exciton from the neutral donor bound exciton in the low temperature region and the dissociation of free electron and hole from the free exciton in the high temperature region.     

Magnetic and Transport Properties of Ferromagnetic Semiconductor GaDyN Thin Film

Magnetic properties and temperature dependence of electrical transport properties of rare-earth-metal Dy-doped GaN thin film are experimentally studied with a superconducting quantum interference device magnetometer and van der Pauw method. It was found that this thin nitride film has both semiconductor properties and ferromagnetism from 1OK to room temperature. The dopant-band (conducting band due to doping) electron conduction dominates the transport properties of this film at low temperatures. These results indicate that Dy-doped GaN is an n-type ferromagnetic semiconductor at room temperature.     

以吐温-80为增溶剂催化光度法测定痕量钒(Ⅴ)

本文报道了在硫酸性介质中 ,以吐温 - 80为增溶剂 ,溴酸钾氧化姜黄催化光度法测定痕量钒 ( )的新体系。方法的检出限为 2 .6× 10 -3mg· L-1;相对标准偏差为 2 .7% (n=9) ,线性范围为 0 .0 12— 0 .0 4 0mg· L-1。可用于测定水样中痕量钒 ( ) ,结果满意     

流动注射-化学发光法测定地质样品中的痕量钴（Ⅱ）

1 引言 化学发光分析具有灵敏度高、线性范围宽、仪器简单价廉等优点,已被用于免疫分析、水样分析和其它简单样品中无机组分的分析.但由于选择性较差,目前还很少见到利用该方法测定地质样品中痕量元素的报道.我们详细研究了流动注射-化学发光法测定地质样品中痕量钴的条件,实现了化学发光法测定地质样品中的痕量钴.     

车前子中多糖含量的测定

采用蒽酮-硫酸法比色测定，用精制车前子多糖测得车前子多糖对葡萄糖的换算因子，对我国同属不同品种的车前子不同采集时间及炮制前后其多糖含量进行了比较研究。结果表明：此测定方法简便可行。供试液在8h内显色稳定，重现性较好，平均回收率为97．8％，RSD=1．41％(n=5)。江西吉安产大粒车前子生品多糖含量在9．15％～9．83％之间，炮制后其多糖含量在6．29％～6.81％之间；南昌新祺周车前GAP标准基地的大粒车前子生品多糖含量为7.85％～8．38％，炮制后其多糖含量为6．01％～6．64％；东北产的小粒车前子生品多糖含量为6．61％，炮制后其多糖含量为6．45％。     

蓝宝石R面上ZnO薄膜的NH3掺杂研究

以NH₃为掺杂源,利用金属有机化学气相沉积(MOCVD)系统在蓝宝石R面上生长出掺氮ZnO薄膜。通过XRD,SEM测量优化了其生长参数,在610℃和在80sccm的NH₃流量下生长出了〈1120〉单一取向的ZnO薄膜。经Hall电阻率测量,得知该薄膜呈现弱p型或高电阻率,并对其光电子能谱进行了研究。     

甲基对硫磷的快速测定及电化学性质

研究了杀虫剂甲基对硫磷的电化学性质。在pH10．38的Bdtton—Robinson缓冲溶液中，采用微分脉冲溶出伏安法在悬汞电极上得到一个还原峰，峰电位为-0．5V(vs．Ag/AgCl)，本工作对实验条件进行了深入的研究，结合线性扫描伏安法等手段。研究了体系的电化学行为。实验表明，甲基对硫磷在汞电极上具有吸附性，电极反应具有不可逆性。该法用于水果及水样中甲基对硫磷残余量的测定，结果满意。