缓冲层Ta对FePt薄膜L10有序相转变及矫顽力的影响

制备了Ta/FePt/C系列多层膜，研究了样品在不同温度退火后的磁特性和微结构.实验结果表明，不同厚度的Ta缓冲层具有不同的微结构特征，显著影响FePt层的L1₀有序相的形成及相应的矫顽力.当Ta缓冲层较薄，Ta层为非晶态，且较为粗糙，由此使FePt在界面处产生较多的缺陷并导致较高密度的晶界，在退火过程中，受束缚相对较弱的非晶态的Ta原子比较容易沿FePt的缺陷和晶界处向FePt层扩散，使FePt在相变过程中产生的应力比较容易释放，同时，Ta在扩散过程中产生的缺陷，降低了FePt有序 关键词： FePt薄膜 0相')" href="#">L1₀相 原子扩散     

多层薄膜模型分析光纤光栅的一个新方法

光纤光栅可以看作为周期性高、低折射率相间的多层落膜叠合结构。用波动方法推导了计算这一结构总反射系数的一个新的循环公式。用这一方法计算了均匀光纤光栅布格拉格相位匹配、失配情况和非均匀光纤光栅的反射系数，并将其结果与用耦合波理论、Rouard方法以及基础矩阵方法的结果进行了比较，并检验了这些方法的精度。     

溶胶-凝胶法BazTiSi2O8铁电薄膜的制备及结构表征

采用溶胶-凝胶工艺在Si(100)衬底上制备了Ba2TiSi2O8(BTS)薄膜。通过XRD衍射、傅立叶红外(FT-IR)、拉曼(Raman)散射光谱和原子力显微镜(AFM)对薄膜的显微结构进行了表征。AFM分析显示，BTS薄膜表面光滑，晶粒尺寸在0．30～0．50μm。薄膜结构分析表明：随着退火温度的增加，BTS薄膜的结晶度增加，薄膜结构变得更加致密。同时，随着退火温度的升高，晶胞尺寸出现了收缩，导致了BTS薄膜的四方比c／a从0．613上升到0．618，将对薄膜的压电性能产生影响。     

快重离子辐照C60薄膜的强电子激发效应研究

利用能量为2.0GeV的¹³⁶Xe和2.7GeV的²³⁸U离子对C₆₀薄膜进行了辐照,并用傅立叶变换红外光谱、X射线衍射谱和拉曼散射技术分析了辐照过的C₆₀样品,在傅立叶变换红外光谱上,首次观察到一个位于670cm^－1处的,表征未知结构的新峰,研究了其强度随电子能损和辐照剂量的变化规律.分析结果表明,电子能量转移主导了C₆₀薄膜的损伤过程;而损伤的部分恢复是由强电子激发的退火效应引起的;另外,离子的速度在损伤的建立过程中也起了一定的作用     

Range Distribution Parameters and Electronic Stopping Power for ^19F^＋ Ions in SnO2, Indium-Tin Oxide, AgGaSe2 and AgGaS2： Comparison Between Theory and Experiment

Range distributions of fluorine for ^19F^ implantation into SnO2, indium-tin oxide, AgGaS2 and AgGaSe2 aremeasured by using the ^19F(p, αγ)^16O resonant nuclear reactions. The electronic stopping cross sections for ^19F ions in these materials are derived from the measured range distributions. These experimental results are compared with those obtained from the newest version of stopping and range computer code, SRIM2003. Thevalues of projected range predicted by the SRIM2003 agree well with the measured values for AgGaS2 andAgGaSe2 substrates. However, the values given by the SRIM2003 substantially deviate from the experimentalvalues for the oxide materials SnO2 and ITO.     

Studies of Spectroscopic Ellipsometry in Cd1-xMnxTe/CdTe Superlattices

Cd1-xMnxTe/CdTe superlattices and thin films were grown by molecular beam epitaxy on GaAs （001） substrates. Spectroscopic ellipsometry measurements were performed on Cd1-x Mnx Te/ CdTe superlattices with compositions x = 0.4, 0.8, and Cd1-xMnx Te thin films with x = 0.2, 0.4, 0.6 at room temperature in the photon energy range 1.4-5 eV. In superlattices the pseudodielectric functions measured by ellipsometry show specific features related to the exciton transition between quantized interbands. The exciton transitions related to the heavy holes of 11 H, 22H, and 33H are observed and identified. In thin films spectroscopic ellipsometry allows the clear identification of the energy gap Eo. Additionally, critical point transitions are observable in both the spectra of the superlattices and films. Photoreflectance spectra were also performed at room temperature in order to compare with our ellipsometry results. After taking into account the strain-induced and quantum confinement effects, the theoretical calculations are in good agreement with our experimental spectra. Ellipsometry appears to be a suited technique to monitor the MBE growth, ultimately also in situ, of diluted magnetic low-dimensional systems.     

热处理参数对溶胶-凝胶法制备氧化锌薄膜特性的影响

采用溶胶-凝胶旋涂法在Si(111)衬底上生长了ZnO薄膜，并用荧光光谱、原子力显微镜和XRD对ZnO薄膜样品进行了分析.结果表明，溶胶-凝胶旋涂法制备的ZnO薄膜为纤锌矿结构，其c轴取向程度与热处理温度有很大的关系.当热处理温度小于550℃时，氧化锌薄膜在室温下均有较强的紫外带边发射峰，而可见波段的发射很弱；当热处理温度高于550℃时，可见波段发射明显增强.对经过不同时间热处理的ZnO薄膜样品分析表明，氧化锌薄膜的荧光特性及表面形貌与热处理时间也有很大关系，时间过短可见波段的发射较强，但时间过长会导致晶 关键词： ZnO薄膜 光致发光     

HgCdTe红外探测器离子注入剂量优化研究

在中波响应波段的p型Hg_0.709Cd_0.291Te(MCT)分子束外延生长薄膜上，利用材料芯片技术获得叠加注入不同硼离子剂量的系列大光敏元面积(500μm×500μm)的n-op-p结.通过测量液氮温度下不同离子注入剂量单元的电流-电压特性和对零偏微分电阻R₀分析，观测到p-n结的性能与硼离子注入剂量明显的依赖关系.在另一片薄膜材料(镉组分值为0.2743)上通过该方法获得R₀A优于现有常规数值的探测器单元. 关键词： p-n结 离子注入 碲镉汞薄膜