Multiple-State Storage Capability of Stacked Chalcogenide Films （Si16Sb33Te51/Si4Sb45Te51/Si11Sb39Te50） for Phase Change Memory

The multiple-state storage capability of phase change memory （PCM） is confirmed by using stacked chalcogenide films as the storage medium. The current-voltage characteristics and the resistance-current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure. Qualitative analysis indicates that the multiple-state storage capability of this stacked film structure is due to successive crystallizations in different Si-Sb-Te layers triggered by different amplitude currents.     

Experimental Studies on Thermal and Electrical Properties of Platinum Nanofilms

We experimentally studied the in-plane thermal and electrical properties of a suspended platinum nanofilm in thickness of 15 nm. The measured results show that the in-plane thermal conductivity, the electrical conductivity and the resistance-temperature coefficient of the studied nanofilm are much less than those of the bulk material, while the Lorenz number is greater than the bulk value. Comparing with the results reported previously for the platinum nanofilm in thickness of 28 nm, we further find that the in-plane thermal conductivity, the electrical conductivity and the resistance-temperature coefficient decrease with the decreasing thickness of the nanotilm, while the Lorenz number increases with the decreasing thickness of the nanofilm. These results indicate that strong size effects exist on the in-plane thermal and electrical properties of platinum nanofilms.     

Effects of Post-Thermal Treatment on Quality of SiC Grown by PVT Method

We report the effects of post-thermal treatment on the quality of 2-inch 6H-SiC wafer cut from a crystal boule grown by physical vapour transportation method. The full widths at half maximum of x-ray diffraction rocking curves measured on sites across the 2-inch wafer become narrower, indicating the quality improvement after a three-step post-thermal treatment. It is found that the most common defects such as micropipes and inclusions can be significantly reduced after the treatment. Our results show that the post-thermal treatment is an effective route to improve the quality of SiC single crystals.     

圆形振动膜ZnO压电微传声器的研制

本文介绍了一种新型圆形振动膜ZnO压电微传声器的制备，并对传声器制备的工艺过程进行了较为详细的描述。圆形振动膜的压电传卢器与以前方形振动膜结构设计相比，较大幅度提高了传声器的灵敏度和成品率，灵敏度达到-70dB（相对于1V／Pa），成品率达到80％。     

非晶态硒化镉薄膜瞬态光电特性

本文报道用真空热蒸发法淀积的非晶态硒化镉薄膜作光敏介质制备超快光电导探测器。用对撞脉冲锁模Nd:YAG激光器产生的超短光脉冲序列对探测器的响应时间进行检测,结果表明a-CdSe薄膜对皮秒(10^-12秒)级的超短光脉冲作用具有良好的瞬态响应光电特性,探讨a-CdSe薄膜快速弛豫过程的内在机理。     

分形概念及其在材料科学中的应用

本文首先结合几个数学构造分形的例子介绍分形概念，然后对分形在材料科学中的应用作了简要介绍，主要包括：粉体生长中的分形、断裂面的分形、离子注入等非平衡方法产生的分形、表面分形、无机材料中的分形、自旋玻璃中的分形．     

液氮下工作的薄膜biPbSrCaCuO dc SQUID

利用电阻加热、单源混合分层蒸镀方法制备的 Bi PbSrCaCuO 超导薄膜,研制成功带双桥结的单圆孔的直流超导量子干涉器(dc SQUID).这些 dc SQUID 在78K 呈现出完全的周期性磁通响应的电压特性.在无屏蔽条件下,0—1Hz 频率范围内,78K 的磁通噪声的典型值为1.7×10~(-3)φ_0/(Hz)~(1/2),相应的能量分辨率为3.6×10~(-26)J/Hz.同时,我们发现了无偏置电流下的可以锁定的磁通响应的电压二次谐波现象,此现象尚未理解清楚,但它与 dc SQUID的 I—V 特性形状有密切关系,并对其进行了探讨.     

反气泡的形成与崩溃

比利时的物理学家使用高速摄像机首次观察到液体中“反气泡”的形成、运动和崩溃过程(DorboloSetal.NewJ.Phys .,2 0 0 4 ,5 :1 61 ) .众所周知,气泡是一球形的液体薄膜,里面包着空气,外面又被空气包围着.而反气泡,顾名思义,则是一球形的空气壳,里面包着液体,外面又为液体所包围.在液体中气泡会升到液面上来,而反气泡则沉到液体底部.比利时Liege大学的StephaneDorbolo等缓慢地将肥皂水倒入一个装有同样肥皂水的玻璃容器中.他们观察到在液面下产生了一注液体小球,然后,这注小球破裂成一系列反气泡.反气泡存在了两分钟之久.反气泡崩溃的方…     

超磁致伸缩材料国际会议情况介绍

日本高科技协会，于1996年11月6日-8日在美国夏威夷火努鲁鲁的日本东海大学太平洋中心组织召开了稀土超磁致伸缩材料基础和应用研究的国际会议．超磁致伸缩材料GMM（GiantManetostrictiveMa．tenals）为稀土元素钛Tb（Terbium）、镐Dy（DysPro－sium）和铁Fe的合金化合物，其基