Improved Performance of Phthalocyanine Derivative Field-Effect Transistors by Inserting a Para-Quarterphenyl as the Inducing Layer

We investigate the phthalocyanine derivative organic field-effect transistors （OFETs） using a novel para - quaterphenyl （p-4p） as the inducing layer. Compared to the devices without the p-4p inducing layer, the performances of p-type （copper phthalocyanine） and n-type （fluorinated copper phthaloeyanine） OFETs with optimized thickness of p-4p thin films are greatly enhanced. Both the field-effect mobility and the on/off ratio of the two-type devices are improved by one order of magnitude compared to those of the control devices. This re- markable improvement is attributed to the introduction of p-4p, which can form a highly oriented and continuous phthalocyanine derivative film with the molecular π - π stack direction parallel to the substrate.     

C,igahertz longitudinal acoustic phonons originating from ultrafast ligand field transitions in hematite thin films

The creation and propagation of longitudinal acoustic phonons （LAPs） in high quality hematite thin films （α-Fe203） epitaxially grown on different substrates （BaTiO3, SrTiO3, and LaAlO3） are investigated using the femtosecond pump- probe technique. Transient reflection measurements （AR/R） indicate the photo-excited electron dynamics, and the initial decay less than 1 ps and the slow decay of -500 ps are attributed to the electron-LO phonon coupling and electron-hole nonradiative recombination, respectively. LAPs in α-Fe2O3 film can be created by ultrafast excitation of the ligand field state, such as the ligand field transitions under 800-nm excitation as well as the ligand to metal charge-transfer with 400- nm excitation. The strain modulations of the sound velocity and the out-of-plane elastic properties are demonstrated in α-Fe2O3 film on different substrates.     

Improved crystal quality of GaN film with the in-plane lattice-matched Ino.17Alo.s3N interlayer grown on sapphire substrate using pulsed metal-organic chemical vapor deposition

We report on an improvement in the crystal quality of GaN film with an Ino.17Alo.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations （TDs） in GaN film with the InA1N interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy （TEM） measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InA1N interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InA1N interlayer. Atomic force microscopy measurement shows that the InA1N interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InA1N interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.     

应力调制的自旋转矩临界电流

自旋转矩临界电流过大的问题长期以来一直为人们所关注.本文提出,可以通过引入面外应力即引入应力各向异性场来降低退磁场,从而降低自旋转矩的临界电流.本文采用四分量分布式自旋电路模型计算了横向自旋阀由注入端输运到探测端(自由层)的极化电流大小.利用Landau-Lifshitz-Gilbert-Slonczewski方程数值研究了存在应力时,横向自旋阀中自旋转矩引起的自由层磁矩翻转的性质.结果表明,适当选择应力方向可使面外退磁场得到有效补偿,从而显著降低自旋转矩临界电流.另外,随着应力提高和退磁场的减小,磁矩翻转时间也大大减小.     

掺Ag纳米颗粒的BaTiO3复合薄膜的非线性光学特性

通过准分子激光(XeCl,308 nm,20 ns)在MgO(100)单晶衬底上制备了不同掺杂浓度的Ag:BaTiO3纳米复合薄膜,通过X射线衍射和X射线光电子能谱对薄膜的结构和组分进行了表征.在430 nm和470 nm附近观测到了不同浓度Ag纳米颗粒引起的等离子体吸收峰,通过z扫描技术对复合薄膜的三阶非线性光学特性进行了测量,并对其光学非线性的增强机制进行了讨论.     

HL-2M偏滤器结构动力学分析

用有限元软件分析了动载荷作用下的偏滤器结构动力学响应。通过对动力学和静力学计算结果的对比,确定载荷的动态放大因子。计算结果表明,所设计的偏滤器结构在瞬态电磁力载荷作用下能满足设计准则的要求。     

100kV直流高温超导电缆终端应力锥设计

本文提出了一种新的单直线应力锥设计方法,根据PPLP材料的绝缘特性,结合超导电缆的本体尺寸和设计电压,给出了增饶绝缘厚度和应力锥轴向长度的设计数据,其中增饶绝缘厚度为3.5 mm,应力锥轴向长度为38.5 mm,并对单直线应力锥进行电场数值分析,结果表明,所设计的单直线应力锥满足100 kV直流高温超导电缆运行要求。     

Light induced microstructure transformation in a-Si：H films

A series of a-Si:H films are deposited by hot wire assisted microwave electron cyclotron resonant chemical vapour deposition (HW-MWECR-CVD), subsequently exposed under simulated illumination for three hours. This paper studies the microstructure change during illumination by Fourier Transformation Infrared (FTIR) spectra. There are two typical transformation tendencies of microstructure after illumination. It proposes a model of light induced structural change based on the experimental results. It is found that all samples follow the same mechanism during illumination, and intrinsic structure of samples affect the total H content.