纳米级自旋电子学材料取得重要进展

因为纳米级的自旋电子学器件需要在纳米尺度上仍能在较高温度下保持优异性能的高自旋极化率材料，故与半导体相容的半金属铁磁体近来受到高度重视．文章介绍作者在这个方向上研究工作的最新重要进展：通过大规模系统的高精度第一原理计算，作者发现三个3d过渡金属硫系化合物的闪锌矿相具有优异的半金属铁磁性，并且其结构性能适合做成具有足够厚度的薄膜或层状材料，便于应用于纳米级自旋电子学器件。     

Rotational Deformation of Neutron Stars

The rotational deformations of two kinds of neutron stars are calculated by using Hartle‘s slow-rotation formulism. The results show that only the faster rotating neutron star gives an obvious deformation. For the slow rotating neutron star with a period larger than hundreds of millisecond, the rotating deformation is very weak.     

Probing the Microscopic Origin of Gravity via Precision Polarization and Spin Experiments

As in other parts of physics, we advocate the interaction approach: experiments ←→ (… are influenced and their importance is determined by … and vice versa) phenomenology ←→ low-energy effective (field) theory ←→ microscopic theory to probe the microscopic origin of gravity, Using the X-g phenomenological framework, we discuss the tests of equivalence principles. The only experimentally unconstrained degree of freedom is the axion freedom. It has effects on the long-range astrophysical/cosmological propagation of electromagnetic waves and can be tested/measured using the future generation of polarization measurement of cosmic background radiation.The verification or refutal of this axionic effect will be a crucial step for constructing an effective theory and probing the microscopic origin of gravity. The interaction of spin with gravity is another important clue for probing the microscopic origin of gravity. The interplay of experiments, phenomenology and effective theory are expounded. An ideal way to reveal the microscopic origin of gravity is to measure the gyrogravitational ratio of particles, Three potential experimental methods are considered.     

Spin Squeezing and Entanglement of Many-Particle Spin-Half States

In many-particle spin-half systems with exchange symmetry, we find that the spin squeezing is related to two types of entanglement, the bipartite and the pairwise entanglement. A quantitative relationship is revealed for the spin squeezing parameter, the tangle, and the concurrence. We find that a class of states is spin squeezed if the pairwise entanglement is stronger than the bipartite entanglement.     

Magnetic and Transport Properties of Ferromagnetic Semiconductor GaDyN Thin Film

Magnetic properties and temperature dependence of electrical transport properties of rare-earth-metal Dy-doped GaN thin film are experimentally studied with a superconducting quantum interference device magnetometer and van der Pauw method. It was found that this thin nitride film has both semiconductor properties and ferromagnetism from 1OK to room temperature. The dopant-band (conducting band due to doping) electron conduction dominates the transport properties of this film at low temperatures. These results indicate that Dy-doped GaN is an n-type ferromagnetic semiconductor at room temperature.     

介孔网络电路

用二次阳极氧化法制备纳米多孔氧化铝板,然后用磁控溅射方式在纳米多孔氧化铝板表面镀金得到介孔网络电路,对该介孔网络电路进行输运测量,发现其具有非线性电阻.     

Spin polarization effect for Tc2 molecule

Density functional method (DFT) (B3p86) of Gaussian98 has been used to optimize the structure of the Tc_2 molecule. The result shows that the ground state for Tc_2 molecule is an 11-multiple state and its electronic configuration is {}^{11}Σ_g^-, which shows the spin polarization effect of Tc_2 molecule of a transition metal element for the first time. Meanwhile, we have not found any spin pollution because the wavefunction of the ground state does not mingle with wavefunctions of higher energy states. So, that the ground state for Tc_2 molecule is an 11-multiple state is indicative of the spin polarization effect of Tc_2 molecule of a transition metal element: that is, there exist 10 parallel spin electrons. The non-conjugated electron is greatest in number. These electrons occupy different spacious tracks, so that the energy of Tc_2 molecule is minimized. It can be concluded that the effect of parallel spin of the Tc_2 molecule is larger than the effect of the conjugated molecule, which is obviously related to the effect of electron d delocalization. In addition, the Murrell--Sorbie potential functions with the parameters for the ground state {}^{11}Σ_g^- and other states of Tc_2 molecule are derived. Dissociation energy D_e for the ground state of T_{c2} molecule is 2.266eV, equilibrium bond length R_e is 0.2841nm, vibration frequency ω_e is 178.52cm^{-1}. Its force constants f_2, f_3, and f_4 are 0.9200aJ·nm^{-2}, --3.5700aJ·nm^{-3}, 11.2748aJ·nm^{-4} respectively. The other spectroscopic data for the ground state of Tc_2 molecule ω_eχ_e, B_e, α_e are 0.5523cm^{-1}, 0.0426cm^{-1}, 1.6331×10^{-4}cm^{-1} respectively.     

Spectral property and its shape transition on ^72-84Kr isotopes in microscopic core plus two-quasiparticle approach

By using a microscopic sdIBM-2 2q.p, approach, the levels of the ground-band, 7-band and partial two-quasi-particle bands for ^72-84Kr isotopes are calculated. The data obtained are in good agreement with the recent experimental results, and successfully reproduce the nuclear shape phase transition of ^72-S4Kr isotopes at zero temperature.The ground-state band is described successfully up to J^π=18^ and Ex=10.0MeV. Based on this model, the aligned requisite minimum energy has been deduced. The theoretical calculations indicate that no distinct change of nuclear states is caused by the abruptly broken pair of a boson, and predict that the first backbending of Kr isotopes may be the result of aligning of two quasi-neutrons in orbit g9/2, which galus the new experimental support of the measurements of g factors in the ^78-86Kr isotopes.     

磁电垒结构中自旋极化输运性质的研究

研究了电子隧穿几类磁电垒结构的自旋极化输运性质，导出统一的传输概率公式，揭示了非 均匀磁场的分布与自旋过滤的关系，同时表明采用有效朗德因子较大的半导体材料可以显著 增强磁电垒结构的自旋过滤效果. 关键词： 磁电垒 自旋过滤 自旋电子学 自旋极化     

Recombination Efficiency in Double-Layer Organic Light-Emitting Devices

We analyse the influence of properties of organic/organic interface (OOI) on the characteristics of recombination efficiency of organic double-layer light-emitting diodes. Based on the disordered hopping theory model, spatial and energetic disorder of hopping states are also discussed for the case of space charge limited currents in hole transmitting layers but injection-limited currents in electron transporting layers. The results show that the recombination efficiency increases firstly and then decreases for different OOI parameters, and there is a maximum value changed with different spatial disorder parameters and energetic disorder scale. Different spatial disorder parameters make carrier mobilities change greatly, and the energetic disorder scale causes various localized state densities. Our calculated results are qualitatively in agreement with the experimental data.