The magnetoelectric properties of A- or B-site-doped PbVO3 films： A first-principles study

We employ first-principles calculations to study the magnetic and ferroelectric properties of PbVO3 with A （XA = Ca, Sr, Bi, Ba, and La） or B （XB = Ti, Cr, Mn, Fe, Co, Ni, and Cu） site dopants, with the aim of ascertaining a large ferroelectric polarization and a long magnetic order, or even a macro fen＇i/ferromagnetism, which is critical to their potential applications in magnetoelectronic devices. It is found that PbTXAVsO24 （XA =Ca, Sr, and Ba,） are inclined to maintain the spin glass and large ferroelectric polarization. The degenerated G- and C-antiferromagnetic （AFM） couplings in the ideal PbVO3 are broken up, accompanied by the loss of ferroelectric properties, when La or Bi is doped at the A site. In contrast, the above-mentioned 3d transition elements doped at the B site of PbVO3 could induce remnant magnetic moments and preserve the large ferroelectric polarization, except for Ni and Cu. The Fe or Cr at the B site clearly remove the degenerated G- and C-AFM coupling, but the nonmagnetic Ti cannot do so. For the Mn, Co, Ni, or Cu doped at the B sites, even the two-dimensional AFM ordering in PbVO3 is destabilized. The various doping effects are further discussed with inner strain and charge transfer.     

Luminescence properties of ZnS：Cu, Eu semiconductor nanocrystals synthesized by a hydrothermal process

ZnS:Cu, Eu nanocrystals with an average diameter of ～ 80 nm are synthesized using a hydrothermal approach at 200 C. The photoluminescence (PL) properties of the ZnS:Cu, Eu nanocrystals before and after annealing, as well as the doping form of Eu, are studied. The as-synthesized samples are characterized by X-ray diffraction, scanning electron microscopy, inductively coupled plasma-atomic emission spectrometry, and the excitation and emission spectra (PL). The results show that both Cu and Eu are indeed incorporated into the ZnS matrix. Compared with the PL spectrum of the Cu mono-doped sample, the PL emission intensity of the Cu and Eu-codoped sample increases and a peak appears at 516 nm, indicating that Eu 3+ ions, which act as an impurity compensator and activator, are incorporated into the ZnS matrix, forming a donor level. Compared with the unannealed sample, the annealed one has an increased PL emission intensity and the peak position has a blue shift of 56 nm from 516 nm to 460 nm, which means that Eu 3+ ions reduce to Eu 2+ ions, thereby leading to the appearance of Eu 2+ characteristic emission and generating effective host-to-Eu 2+ energy transfer. The results indicate the potential applications of ZnS:Cu, Eu nanoparticles in optoelectronic devices.     

The spin-one Duffin Kemmer Petiau equation in the presence of pseudo-harmonic oscillatory ring-shaped potential

The Duffin-Kemmer-Petiau equation （DKP） is studied in the presence of a pseudo-harmonic oscillatory ring-shaped potential in （1 ＋ 3）-dimensional space-time for spin-one particles. The exact energy eigenvalues and the eigenfunctions are obtained using the Nikiforov-Uvarov method.     

矢量光束界面反射透射的自旋霍耳效应

矢量光束的一般表示方法是利用投影矩阵和广义琼斯矢量的乘积描述.投影矩阵存在一个自由度,该自由度与有限光束的场矢量偏振状态有关,由特定的单位矢量与波矢量间的方位角决定,可以定量地描述矢量光束的偏振状态.本文在矢量光束描述的理论基础上,通过对投影矩阵进行与反射光束与透射光束传播方向相应的坐标旋转,根据麦克斯韦方程组及其边界条件,计算讨论在各向同性介质界面上反射、透射矢量光束的表示形式以及其自旋霍尔效应表现出的横向位移.线偏振光(光子自旋量为σ＝0)横向位移为零,圆偏振光束(光子自旋量为σ＝±1)位移量最大且左圆偏振与右圆偏振光束的位移大小相等方向相反,进一步分析了左圆偏振光束在界面上的反射、透射光束的横向位移与入射角的关系.     

奇A 核的多声子γ振动带实验研究进展

对于近年来清华大学与美国合作研究组在原子核结构实验研究中有关奇A 核的多声子 振动带方面的进展进行了评述。研究人员通过有效的国际合作,识别了质量数A = 100 丰中子核区的奇A核103Nb,105Mo,107Tc 和109Tc中的两声子 振动带,这是迄今为止国际上在奇A 核的结构研究中发现的仅有的4 例这样的结构。对于实验方法、研究结果以及这些多声子 振动带的特性进行了评述,并对目前在多声子带其他方面的研究及今后进一步的工作进行了概述。The experimental research on multi-phonon γ-vibrational bands in odd-A nuclei by our international collaboration has been reviewed. The two phonon -vibrational bands in 103Nb, 105Mo, 107Tc and 109Tc in the A = 100 neutron-rich nuclear region were identified, which are the only four such bands discovered in nuclear structure studies until now. The experimental methods and results are summarized, and the characteristics for these band structures are discussed. The other aspects for our research on the multi-phonon vibrational bands as well as our future research work are also briefly reviewed.     

超导与自旋涨落

在常规超导体中,库珀对是由于电子与声子之间的相互作用而形成的.在此过程中,人们可以只考虑电子的电荷性质与声子之间的关联.然而在所谓的非常规超导体中,人们意识到一些其他类型的元激发也可能导致超导现象,而自旋涨落则可能是其中最重要的一种.在大多数非常规超导体中,都可以发现自旋涨落的身影.而在一些重要的体系中,包括铜基超导体、铁基超导体以及一些重费米子超导体体系等,可以确切地说,自旋涨落起到了关键的作用,尽管其相对应的超导机制仍然还不清楚.文章简单介绍了自旋涨落与超导电性之间的关联.     

自旋Seebeck效应简介

自旋电子学作为一个新兴的学科,是未来电子学发展的重要方向之一.而近年来发现的自旋泽贝克（Seebeck）效应则为自旋电子学的研究提供了不少新现象.文章通过对自旋Seebeck效应的一些科研进展的介绍,较详尽地阐明了自旋Seebeck效应的定义和常用的利用逆自旋霍尔（Hall）效应来进行观测的机制与方法,并对不同种类材料中的自旋Seebeck效应及其可能的成因进行了分析介绍.     

磁性金属纳米结构的畴壁特性与磁逻辑电路构筑

自旋电子学由于其丰富的物理内涵和广泛的应用前景受到学术界和工业界的高度重视,成为近年来凝聚态物理和信息技术领域关注的焦点。本文介绍了利用磁性金属纳米结构实现作为自旋电子器件基础的自旋注入的方法,特别涉及利用铁磁金属纳米点接触结构钉扎磁畴的特点,研究自旋极化电流与磁畴壁的相互作用规律, 理解纳米结构中畴壁的动力学行为,并以此为基础构筑结构简单、性能优异的全金属磁逻辑电路,从而实现了由电信号驱动,通过电信号检测,并与CMOS技术兼容的目的。     

稀磁半导体的研究进展

本文主要介绍了III-V族稀磁半导体(Ga,Mn)As的研究进展,包括(Ga,Mn)As的生长制备、基本磁性质、磁输运特征、磁光性质、磁性起源、相关的异质结构和自旋注入等,同时还简单介绍了其它稀磁半导体如IV族、III-VI族和IV-VI族等稀磁半导体的研究进展,在文章的最后描述了理想的稀磁半导体应该具备的特征以及对未来的展望。     

自旋极化电子原子散射的(e,eγ)符合实验研究

本文介绍了自旋极化电子原子散射的(e,eγ)符合实验的理论基础、实验装置和参数测量方法,描述了符合实验研究主要结果,说明了符合实验研究的物理意义。