Residual stress profiling of an aluminum alloy by laser ultrasonics

A residual-stress profile along the thickness of an aluminum alloy sheet is determined by laser-ultrasonic technique. Surface acoustic waves are generated by a Nd:YAG pulse laser and detected by a Heterodyne interferometer on a lateral free surface of the sheet. The distribution of residual stress is determined by measuring the relative variation of the wavevelocities at different location of the sample along its thickness. This technique is validated by three different residual stress profiles obtained experimentally.     

脉冲时滞抛物型偏微分方程组解的振动性

研究一类脉冲时滞抛物型偏微分方程组解的振动性,利用一阶脉冲时滞微分不等式获得了该类方程组在两类不同边值条件下所有解振动的若干充分条件.所得结果充分反映了脉冲和时滞在振动中的影响作用.     

例说对例题潜能的挖掘

新课改实施几年来,许多教师的教学理念和行为虽然都发生了转变,教学上也花了很大的气力,但教学的效果总是不尽人意,一则是考试成绩总是不理想,所谓“课改改出了一大批学困生”,二是升入高中的学生后劲不足,高中教师对初中课改的责备之声不绝于耳.我认为其主要原因是我们在教学中只是让学生掌握知识,而没有使其形成能力.然而使其形成能力是一个厚积薄发的过程,要求我们在平时的教学中不失时机地去培养.对于初中数学来说,特别要注意对例题潜能的挖掘.下面是我在教北师大版九年级下册《§2.6何时获得最大利润》中的一个片断,供同仁们指正,以便…     

临界装置绝对裂变率测量

临界装置是在低功率下运行的能够维持可控自持链式裂变反应的装置，一般运行的热功率在1kW以下，与动力堆相对应，一般称为零功率装置。在临界装置上进行的各项研究中，一个重要的参数就是裂变反应率(简称裂变率)，它是其它参数测量的基准，如在脉冲式的反应堆中，还是脉冲裂变总数的测量基准，是脉冲堆的一个主要指标。     

CCD光谱谱线标定方法研究

CCD作为光谱分析和测色仪器的光谱接收器件 ,光谱谱线定位受单色仪狭缝和CCD光敏元尺寸影响。提出采用最小二乘法做曲线拟合和质心法来确定光谱线在CCD上的精确定位 ,使光谱谱线的定位精度得到提高 ,并且不受CCD光敏元尺寸限制。实验结果表明 ,两种方法对光谱线的定位 ,具有重复性高 ,稳定性好等特点。在定位精度上 ,两者具有一致性。     

Fabrication of Long-Period Fibre Gratings Using 800 nm Femtosecond Laser Pulses

Long-period fibre gratings inside standard single-mode optical communication fibres are successfully fabricated with infrared femtosecond laser pulses. The refractive index perturbations are well confined within the fibre core by choosing the proper laser focusing parameters and translation speed of the fibre during the direct laser writing process. With the self-focusing effect considered and at a constant average irradiation dose of 1.62 × 10^3 J/（cm^2μm）, the threshold intensity for fabricating long-period gratings with infrared femtosecond laser pulses is determined to be 5.13 × 10^13 W/cm2.     

High-Dimensional Nonlinear Envelope Equations and Nonlinear Localized Excitations in Photonic Crystals

We investigate the nonlinear localized structures of optical pulses propagating in a one-dimensional photonic crystal with a quadratic nonlinearity. Using a method of multiple scales we show that the nonlinear evolution of a wave packet, formed by the superposition of short-wavelength excitations, and long-wavelength mean fields, generated by the self-interaction of the wave packet, are governed by a set of coupled high-dimenslonal nonlinear envelope equations, which can be reduced to Davey-Stewartson equations and thus support dromionlike high-dimensional nonlinear excitations in the system.     

微脉冲电子枪的初步实验研究

给出了微脉冲电子枪的模拟计算及其初步实验结果. 该电子枪采用铜铝镁合金作为冷阴极材料, 在以磁控管作为微波功率源的出束实验中得到了100mA/cm²的电流密度.实验结果与次级电子倍增解析计算和SEEG程序的模拟计算结果基本符合, 初步验证了微脉冲电子枪的基本原理, 为今后实验中得到更大的电流密度打下了基础.     

Effect of Incident Intensity on Films Growth in Pulsed Laser Deposition

Incident intensity, defined by the amount of particles deposited per pulse, is an important parameter in the film growth process of pulsed laser deposition （PLD）. Different from previous models, we investigate the irreversible and reversible growth processes by using a kinetic Monte Carlo method and find that island density and film morphology strongly depend on pulse intensity. At higher pulse intensities, lots of adatoms instantaneously diffuse on the substrate surface, and then nucleation easily occurs between the moving adatoms resulting in more smaller-size islands. In contrast, at the lower pulse intensities, nucleation event occurs preferentially between the single adatom and existing islands rather than forming new islands, and therefore the average island size becomes larger in this case. Additionally, our results show that substrate temperature plays an important role in film growth. In particular, it can determine the films shape and weaken the effect of pulse intensity on film growth at the lower temperatures by controlling the mobility rate of atoms. Our results can match the related theoretical and experimental results.     

GeⅩⅪ-SeⅩⅩⅢ离子n=3,Δn=0跃迁谱线和振子强度的计算

用HFR方法对CaⅨ-KrⅩⅩⅤ离子3s2,3s3p,3s3d,3p2组态能级结构进行了理论计算.在已有实验研究的基础上,通过分析离子能级沿等电子序列的变化规律,运用最小二乘拟合方法预言计算了GeⅩⅪ-SeⅩⅩⅢ离子3s2,3s3p,3s3d,3p2组态14条精细结构能级值.在此基础上,进一步计算了GeⅩⅪ-SeⅩⅩⅢ离子3s2-3s3p,3s3p-3s3d和3s3p-3p2跃迁的23条谱线波长和相应的振子强度.计算结果与已有的实验值十分吻合,波长的最大不确定度为0.008 nm.