Silicon-on-Insulator Based Electro-optic Variable Optical Attenuator with a Series Structure

An electro-optic variable optical attenuator in silicon-on-insulator is designed and fabricated. A series structure is used to improve the device efficiency. Compared to the attenuator in the single p-i-n diode structure in the same modulating length, the attenuation range of the device in the series structure improves 2-3 times in the same injecting current density, while the insertion loss is not affected. The maximum dynamic attenuation of the device is greater than 30dB. The response frequency is obtained to be about 2 MHz.     

Luminescent Properties and Mechanism of Gd1-x-yAlO3Eux,REy

GAP:Eu,Re(Gd1-x-yAlO3Eux,REy?A，RE=Pr or Ce) powders were prepared by a nitrate-citrate process. It is found that luminescent intensity decreases when GAP:Eu is co-doped with Pr or Ce. The phenomena of spectra prove that there is a resonant energy transfer between Eu and Pr, by the absorption and emission of lower-energy phonon, and also Ce sensitizer decreases the activator energy level from host→Eu. The two factors are considered to be the main reasons for decrease of the luminescent intensity for the co-doped GAP:Eu,Re.     

Viscosity Characteristic in Metallic Melts with Medium／Short-Range Order Structures

Viscosities and liquid structure of alloys Cu75Al25, Cu87Sn13 and Al-12.5%Si and pure metals Cu and Sn are investigated by using torsional oscillation viscometry and high temperature x-ray diffractometry. The viscosities of pure metals and eutectic alloy melts along with the short-range order structure are found to follow the Arrhenius law in a wide range of temperature above the liquidus. The breakpoints in Arrhenius plots emerge when the structures of alloy melts are transformed from the medium-range order structure to the short-range order structure. It has been found that the change of the viscosity of the metallic alloys is a characteristic of microstructure transformation in the related melts.     

Magnetic and Crystalline Microstructures of Fe-Pt-B Nanocomposite Ribbons

We investigate magnetic and crystalline microstructures of melt-spun (Fe0.675Pt0.325)100-xBx (x=12, 14, 16, 18,20) nanocomposite ribbons after optimal thermal treatment using a magnetic force microscope. The magnetic microstructures are characterized by darker spots adjacent to brighter ones in a sub-micro scale and in random distribution. It is found that the strength of the exchange coupling interaction between the crystals in the 10-100 nm scale, implied by the maximum value (δM)max of the Henkel plot, could be roughly described by the ratio of the average width of the magnetic spots w^- to the average crystal size D^- for the ribbons. Moreover, we find that the intrinsic coercivity jHc of the ribbons is sensitive to their crystal sizes, and the smaller D^-, the higher jHc. Finally, by using roughness analysis, the curve of the root mean square values (δФ)rms of the phase shift of the magnetic force images versus the boron content x is obtained, which is qualitatively consistent with that of the magnetization σ12 kOe of the ribbons versus x.     

Measurement of D(d,p) T Reaction Cross Sections in Sm Metal in Low Energy Region (10≤Ed≤20keV)

To study the screening effect of nuclear reactions in metallic environments, the thick target yields, the cross sections and the experimental S(E) factors of the D(d,p)T reaction have been measured on deuterons implanted in Sm metal at 133.2K for beam energies ranging from 10 to 20keV. The thick target yields of protons emitted in the D(d,p) T reaction are measured and compared with those data extrapolated from cross sections and stopping power data at higher energies. The screening potential in Sm metal at 133.2K is deduced tobe 520±56eV. As compared with the value achieved in the gas target, thecalculated screening potential values are much larger. This screening potential cannot be simply interpreted only by the electron screening. Energy dependences of the cross section σ(E) and the experimental S(E) factor for D(d,p)T reaction in Sm metal at 133.2K are obtained, respectively.     

ZnO：V薄膜后退火处理前后的微结构与发光特性

利用溶胶-凝胶(Sol-gel)法在单晶硅(100)衬底上分别制备了ZnO:V薄膜和纯ZnO薄膜。为进一步研究后退火对ZnO:V薄膜结构和发光性质的影响,在两段式快速退火后又在800℃下进行了后退火处理。X射线衍射的结果表明:后退火处理前,钒(V)的掺入使ZnO结晶质量变差,而800℃退火处理后,从ZnO的衍射峰中可以看出,相对于无V杂样品其结晶质量变好。扫描电子显微镜形貌图中可以看出制备的样品薄膜颗粒大小均匀,薄膜致密度较高。光致发光(PL)谱的研究表明:ZnO:V薄膜在800℃退火处理后,紫外和绿带发光峰均增强,但紫外发光峰增强得更多;与同样条件下制备的纯ZnO薄膜的PL谱比较,发现V掺杂后样品的紫外激子复合发光峰的强度明显增强且峰位发生蓝移,而缺陷引起的绿带发光峰的强度降低。     

光纤微机电系统法布里-珀罗压力传感器的波分复用

提出了一种用阵列波导光栅复用光纤微机电系统法布里-珀罗压力传感器的方法,实现了法布里-珀罗压力传感器的准分布式测量。传感器基于法布里-珀罗腔干涉的原理,采用微机电系统技术加工制作,用双波长方法解调干涉信号,利用传感器对两个不同波长光的反射率的比值与压力的单值关系确定所施加压力的大小,用阵列波导光栅实现传感器复用。理论分析与实验验证了传感器解调和复用的基本原理。实验结果表明:在压力的线性测量范围(0~1.5 MPa)内,系统的灵敏度(相对反射率比值/压力)可达到0.02026 MPa-1,测量结果具有较好的线形性,相对反射率比值的标准偏差小于3×10-4。该系统可以补偿传感器光网中和波长无关的变动引起的误差,具有好的线性、灵敏度和精度,复用能力强且复用传感器间无串扰。     

基于最大信噪比测量两相流速度

为了克服噪声对信号的影响,提出一种利用最大信噪比和相关法测量两相流速度的方法.基于最大信噪比的信号分离方法是一种盲源信号分离方法,该算法利用统计独立信号完全分离时信噪比最大作为分离准则,它具有非常低的计算复杂度.这里首先利用盲源信号分离方法分别提取出上游和下游两相流信号,并据此求出两相流信号的相关函数曲线,由此求出信号的渡越时间,最后给出仿真实验的处理结果.实验结果表明该方法能够满足两相流速度的测量要求.     

Co与Cu掺杂ZnO薄膜的制备与光致发光研究

采用溶胶-凝胶旋涂法在玻璃衬底上制备了Co, Cu单掺杂及Co,Cu共掺杂ZnO薄膜.用金相显微镜观察了Co与Cu掺杂对ZnO薄膜形貌的影响.X射线衍射（XRD）研究揭示所有ZnO薄膜样品都存在（002）择优取向,在Cu单掺的ZnO薄膜中晶粒尺寸最大.对所有样品的室温光致发光测量都观察到较强的蓝光双峰发射和较弱的绿光发射,其中长波长的蓝光峰和绿光峰都能够通过掺杂进行控制.对不同掺杂源的ZnO薄膜发光性能进行了分析,认为蓝光峰来源于电子由导带底到锌空位能级的跃迁及锌填隙到价带顶的跃迁,绿光峰是由于掺杂造成的 关键词： ZnO薄膜 溶胶-凝胶 Co Cu掺杂 光致发光     

缓冲层生长温度对In0.82Ga0.18As 薄膜结构及电学性能的影响

采用低压金属有机化学气相沉积(LP-MOCVD)技术,两步生长法在InP衬底上制备In_0.82Ga_0.18As材料。研究缓冲层的生长温度对In_0.82Ga_0.18As薄膜的结构及电学性能的影响。固定外延薄膜的生长条件,仅改变缓冲层生长温度(分别为410,430,450,470 ℃),且维持缓冲层其他生长条件不变。用拉曼散射研究样品的结构性能,测量四个样品的拉曼散射光谱,得到样品的GaAs的纵向光学(LO)声子散射峰的非对称比分别为1.53,1.52,1.39和1.76。测量样品的霍耳效应表明,载流子浓度随缓冲层生长温度变化而改变,同时迁移率也随缓冲层生长温度变化而改变。通过实验得出:缓冲层的生长温度能够影响In_0.82Ga_0.18As薄膜的结构及电学性能。最佳的缓冲层生长温度为450 ℃。