重新初始化的LS方法跟踪二维可压缩多介质流界面运动

 用非耦合求解方法计算Level Set函数方程与流体力学方程组，应用重新初始化的Level Set函数确保距离函数性质，流体力学方程组采用二阶精度多介质流波传播差分格式计算，重新初始化方程采用五阶WENO格式计算。并给出了二维可压缩多介质流界面运动的计算结果。     

硬盘磁头-碟界面润滑剂失效机理及添加剂X-1P的性能研究

采用热重分析 (TGA)、傅立叶红外光分析 (FTIR)和磁头起飞降落 (CSS)等试验方法 ,研究了硬盘磁头 碟界面润滑层PFPE的失效机理以及添加剂X 1P在磁头 碟界面润滑剂中的作用 .研究结果表明 ,高温条件下磁头材料Al2 O3 会诱导磁头 碟界面润滑剂PFPE发生歧化降解 ,造成磁头 碟界面润滑层失效 ;添加剂X 1P因其特殊的分子结构和化学性能 ,可作为一种有效稳定剂添加到磁头 碟润滑剂PFPE中 ,减弱磁头材料Al2 O3 作为催化反应中心的催化反应活性 ,减缓磁头 碟界面润滑剂PFPE的高温歧化降解 ,改善磁头 碟界面的CSS性能     

Cl/HN3/I2全气相化学激光体系的化学动力学模拟计算

 对Cl/HN₃/I₂产生NCl(a)/I激光的过程进行了化学动力学计算，主要考察了Cl,HN₃和I₂的初始粒子数密度及其配比对小信号增益系数的影响。结果发现,当温度为400K, 初始Cl粒子数密度为1×10¹⁵，1×10¹⁶和1×10¹⁷cm^-3时,小信号增益系数分别达到1.6×10^-4,1.1×10^-3和1.1×10^-2cm^-1，获得最佳小信号增益系数的HN₃和I₂的初始粒子数密度分别为初始Cl粒子数密度的1～2倍和2%～4%。同时，对Cl，HN₃和I₂配比对小信号增益系数和增益持续时间的影响进行了讨论。     

微模塑法制备PMMA/SiO2二氧化硅杂化材料微结构

以摩尔比为 1∶1的甲基丙烯酸甲酯 (MMA)、甲基丙烯酸 (3 三乙氧基硅烷基 )丙酯 (ESMA)单体、0 .2 %(单体总量的质量分数 )的偶氮二异丁腈AIBN引发剂和四氢呋喃 (THF)溶剂 ,及 2 0 % (总质量分数 )的正硅酸乙酯TEOS合成出PMMA/SiO2 有机 无机杂化的杂化溶胶 .将溶胶在洗净的普通光学玻璃基片表面甩膜 .利用软刻蚀中的微模塑法 ,把有机硅弹性印章复制有精细图纹一面轻放在杂化溶胶膜上进行微模塑 ,外加 1N压力于12 0℃下处理 2h使溶胶凝胶化 .印章剥离后在基片表面就形成了PMMA/SiO2 有机 无机杂化材料的微图纹结构 .从微图纹的光学显微镜照片可以看出微模塑方法制备杂化材料复制的图纹精细度高 ,操作简单易行 ,是一类比较理想的微细图纹结构加工的方法 .     

光化学气相淀积SiGe/Si材料的机制分析

本文对光化学气相淀积SiGe/Si过程中气相反应机制和表面反应历程进行了分析和讨论.利用表面反应动力学的有关理论,结合光化学气相淀积的特点,推导出光化学气相淀积SiGe/Si过程中的生长速率和生长压力的关系.并给出该理论结果和实际实验结果的比较.     

光纤孤子在媒质突变界面的反射与透射

本文通过波包慢变假定,准单色近似和径向模式平均法,建立了光纤孤子反射和透射问题的支配方程和边界条件,借助光束传播法,数值模拟孤子在光纤单界面上的反射和透射过程,文中还给出数值实例。 关键词：     

Si1－xGex/Si量子阱发光材料的分子束外延生长及其结构研究

采用固源Si分子束外延,在较高的生长温度于Si(100)衬底上制备出Si1－xGex/Si量子阱发光材料。发光样品的质量和特性通过卢瑟福背散射、X射线双晶衍射及光致发光评估。背散射实验中观察到应变超晶格的反常沟道效应;X射线分析表明材料的生长是共度的、无应力释放的,结晶完整性好。低温光致发光主要是外延合金量子阱中带边激子的无声发射和横光学声子参与的激子复合。并讨论了生长温度对量于阱发光的影响。     

Outline Imaging by THz Time Domain Spectroscopy

Outline imaging by THz time domain spectroscopy is proposed. Spectroscopic splitting at interface is reported, The principle of outline imaging is put forward. Experimental results demonstrate the feasibility of outline imaging by spectroscopic splitting, It is shown that clear out：line image of sample interface could be achieved easily by this technique. The spatial resolution is about 0.6mm. The THz-beam focus, the scanning step and the THz pulse width are the critical foctors affecting the imaging resolution. The signal-to-noise ratio of this technique could be improved greatly compared to the conventional transsion imaging.     

Formation of Interfacial Layers in LaAlO3/Silicon during Film Deposition

We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interracial layer between LaAlO3 film and Si substrate chemical states show that the ratio of La 4d3/2 to Al 2p is SiLaxAlyOz. The depth distributions of La, Si and Al of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content, in the interracial layer gradually decreases with increasing thickness of the interracial layer. These results strongly suggest that the Al element is not deficient in the interracial layer, as previously believed, and the formation of a SiLaxAlyOz interracial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interracial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics.     

Growth of NaBi（WO4）2 Dendrite and Mechanism

The solid-liquid interface motion of NaBi（WO4）2 （NBWO） melt crystal growth is observed in an in situ system, in which the whole processes of interface transition from fiat interface and cellular to dendrite are visualized. The spacing of the dendrite under smaller temperature gradient turns out to be larger than that under larger temperature gradient, which is found to be sensitive to the temperature distribution. The mechanism of dendrite growth of NBWO is studied based on the model of the growth units of anion coordination polyhedra. The { 001} face has two apex links, so it shows higher stability and has high growth rate and forms the arm of dendrite, whereas the {010} face has only one apex link, and thus shows relative slower growth rate and firstly forms the branches.