镶嵌于基质中的金属超微粒子特性研究(Ⅰ)——超微粒子的量子阱点模型

提出超微粒子(UFP)的量子阱点模型。模型假定UFP的主要特性由其非定域电子(简称电子)决定,电子被束缚在三维有限深势阱内。电子的行为由二部分组成:单电子的和集体化的。电子能谱主要由单电子行为决定。模型反映了UFP的一些重要特性,例如块体材料逸出功,UFP原子半径和第一电离能,而忽略UFP更精细的结构。这种近似被证明是合理的。一系列有用的公式和预言被导出。(1)主要的UFP特性,量子尺寸效应和电子能谱的壳层结构。(2)UFP的逸出功和费密能级公式,这对于其他模型是困难的。导出的UFP逸出功随尺寸变化的公式 关键词：     

在失谐简并四波混频中实现量子噪声完全压缩的方法

讨论了在失谐简并四波混频中三种可能实现电磁场量子噪声完全压缩的方法.     

独立元格试探作用量对3维SU(2)格点规范理论相结构的变分研究

应用独立元格试探作用量对3维SU(2)格点规范理论的相结构作了变分计算,所得内能曲线是光滑的,显示理论的禁闭性质.此计算改进了应用独立链试探作用量作变分累积展开方法所得的结果.     

Quantum Phase Transition and Ferromagnetic Spin Correlation in Parallel Double Quantum Dots

We investigate electronic transport through a parallel double quantum dot （DQD） system with strong on-site Coulomb interaction, as well as the interdot tunnelling. By applying numerical renormalization group method, the ground state of the system and the transmission probability at zero temperature are obtained. For a system of quantum dots with degenerate energy levels and small interdot tunnel coupling, the spin correlations between the DQDs is ferromagnetic, and the ground state of the system is a spin-1 triplet state. The linear conductance will reach the unitary limit （2e^2/h） due to the Kondo effect at low temperature. As the interdot tunnel coupling increases, there is a quantum phase transition from ferromagnetic to anti-ferromagnetic spin correlation in DQDs and the linear conductance is strongly suppressed.     

Persistent spin current in a quantum wire with weak Dresselhaus spin——orbit coupling

The spin current in a parabolically confined semiconductor heterojunction quantum wire with Dresselhaus spin--orbit coupling is theoretically studied by using the perturbation method. The formulae of the elements for linear and angular spin current densities are derived by using the recent definition for spin current based on spin continuity equation. It is found that the spin current in this Dresselhaus spin--orbit coupling quantum wire is antisymmetrical, which is different from that in Rashba model due to the difference in symmetry between these two models. Some numerical examples for the result are also demonstrated and discussed.     

Light induced microstructure transformation in a-Si：H films

A series of a-Si:H films are deposited by hot wire assisted microwave electron cyclotron resonant chemical vapour deposition (HW-MWECR-CVD), subsequently exposed under simulated illumination for three hours. This paper studies the microstructure change during illumination by Fourier Transformation Infrared (FTIR) spectra. There are two typical transformation tendencies of microstructure after illumination. It proposes a model of light induced structural change based on the experimental results. It is found that all samples follow the same mechanism during illumination, and intrinsic structure of samples affect the total H content.     

Cr原子气的玻色-爱因斯坦凝聚——量子铁磁流体

具有电偶极矩或磁偶极矩的原子（或分子）气，在逼近绝对零度的降温过程中，可能发生对称破缺的玻色-爱因斯坦凝聚（BEC）．最近，来自德国斯图加特大学物理研究所的Lahaye等，对^52Cr原子气首次实现了伴有强偶极相互作用的BEC．^52Cr原子气的各向同性BEC，已于2005年被实现（A．Griesmaier et al．Phys．Rev．Lett．2005，94：160401），Lahaye等的创新之处在于：通过Feshbach共振，减弱原子间通常的接触相互作用，以至于^52Cr原子间的各向异性磁偶极相互作用相对于前者大大增强．     

含有AlGaAs插入层的InAs/GaAs三色量子点红外探测器

本文报道了采用分子束外延技术制备的三色InAs/GaAs量子点红外探测器. 器件采用nin型结构, 吸收区结构是在InGaAs量子阱中生长含有AlGaAs插入层的InAs量子点, 器件在77 K下的红外光电流谱有三个峰值: 6.3, 10.2和11 μm. 文中分析了它们的跃迁机制, 并且分别进行了指认. 因为有源区采用了不对称结构, 所以器件在外加偏压正负方向不同时, 光电流谱峰值的强度存在一些差异. 不论在正偏压或者负偏压下, 当偏压达到较高值, 再进一步增大偏压时, 都出现了对应于连续态的跃迁峰强度明显下降的现象, 这是由量子点基态与阱外连续态的波函数交叠随着偏压进一步增大而迅速减小导致的.     

超微半导体AgBr的量子尺寸效应

本文研究了间接带半导体ＡｇＢｒ由于空间尺寸的限制产生的吸收，荧光兰移，激子振子强度增强的量子尺寸效应，观察到旋－轨道分裂带至导带的２８４ｎｍ吸收峰，经硫处理的Ａｇｂｒ直接激子吸收峰从３１０ｎｍ移至３０１ｎｍ。相应的荧光从３４０ｎｍ移至３２４ｎｍ，同时在８５０ｎｍ处产生了一新的荧光带。