Unusual Transport Properties near the Insulator-Metal Transition in Colossal Magnetoresistive Manganites

It is argued that a combination of the Griffiths theory and the double-exchange mechanism predicts the random distribution of ferromagnetic metallic clusters above the Curie temperature TC in colossal magnetoresistive manganites. Along this line, we propose a model for the temperature dependence of resistivity that yields a quantitative agreement with experimental data obtained in a typical manganite La2/3Ca1/3MnO3. Our result indicates that the formation and growth of ferromagnetic metallic clusters are responsible for the observation of unusual transport properties near the insulator-metal transition.     

An Electro—Optical Modulator Based on GeO2—Doped Silica Ridge Waveguides with Thermal Poling

A Mach-Zehnder electro-optic modulator is designed and fabricated based on upper-clad GeO2-doped silica ridge waveguides with thermal poling.The electro-optic coefficient obtained is about 0.05pm/V and is polarizationinsensitive.An extinction ratio of over 17dB is achieved.The transmission loss of the modulator for the TE mode is 2-3dB higher than that for the TM mode after the poling.     

4英寸热氧化硅衬底上磁性隧道结的微制备

就如何在4英寸热氧化硅衬底上沉积高质量的磁性隧道结纳米多层薄膜材料和如何利用光刻方法微加工制备均匀性较好的磁性隧道结方面做了初步研究，并对磁性隧 道结的磁电性质及其工作特性进行了初步测量和讨论.利用现有的光刻设备和工艺条 件在4英寸热氧化硅衬底上直接制备出的磁性隧道结，其结电阻与面积的积 矢的绝对误差在10% 以内，隧穿磁电阻的绝对误差在7% 以内，样品的磁性隧道结性质具有较好的均匀性和一致性，可以满足研制磁随机存储器存储单元演示器件的基本要求. 关键词： 磁性隧道结 隧穿磁电阻 磁随机存储器 4英寸热氧化硅衬底     

Theoretical Studies on the Si（001）-SiO2 Interface Structure

1 INTRODUCTION Silicon and its alloy have been widely applied in such fields as electronic industry, high-temperature structural ceramics, etc. In addition, the researches on silicon and its relevant materials greatly promote the rapid development of modern optics and infor- mation technology. Therefore, more and more at- tention is focused on the structure of silicon, oxide of silicon and the interfaces between silicon and metal or nonmetal. As an ideal passive film on the Si surface, S…     

Efficient Visible Electroluminescence from Porous Silicon Diodes Passivated by Carbon Films

By using n-butylamine as a carbon resource,carbon film is deposited on the p-n porous silicon (PS) surface with a radio-frequency glow discharge plasma system.Raman spectra and infrared reflection (IR) spectra of the carbon films indicate that there are amine-group and hydrogen atoms therein.The IR spectra of the passivated PS samples exhibit that the PS surfaces are mainly covered with Si-C,Si-N and Si-O bonds.Electroluminescence (EL) spectra show that the EL intensity of the passivated PS diodes increases greatly and the blueshift of the EL peak occurs compared with the diodes without treatment.Both of these are stable while the passivated diodes are exposed to the air indoors.The I-V characteristics reveal that the passivated diodes have a smaller series resistance and a lower onset voltage.The influence of the carbon film passivation on EL properties of PS has also been discussed.The results have proven that carbon film passivation is a good way to enhance the PS luminescent intensity and stability.     

绝缘表面和气体导电与湿度的关系

湿度对绝缘体表面电导和气体电导有一定的影响，但通常在湿度传感器的研究中忽略了气体电导的贡献。本文通过特殊设计装置来区分表面电导和气体电导，并分别从实验和理论上进行了定性的研究。     

Photoluminescence Characterization of Silicon Nanoparticles Hybridized Europium Complex

A europium complex Eu (DBM)3 TPPO (Eu tris(benzoylmethide)-(triphenylphosphine oxide)) and silicon nanoparticles have been hybridized.The hybridization can evidently change the photoluminescence (PL) characteristics of the Eu complex in the following aspects:under an excitation of 390nm,the intensity of the PL peak at 611nm due to the ^5Du-^7F2 transition of the Eu^3 ions has been increased by 30%,and thc integrated PL intensity in the visible range has been increased by nearly 3 times;the PL excitation efficiency beyond 440nm has been improved cvidently;the peak in the PL excitation spectrum shifts from 408nm to 388nm,and the PL decay time decreases from 2.07 to 0.96μs,The experimental results indicatde that in the PL process,the photoexcited energy may transfer from the silicon nanoparticlcs to the Eu^3 ions.     

类锂硅离子软X射线激光研究

在激光等离子体典型参数条件下，利用碰撞－辐模型计算了类锂硅离子５ｆ－３ｄ和４ｆ－３ｄ跃的粒子数反转比率和激光增益系数。讨论了不同热带条件和不同冷却速度下，激光增益系统数的变化。计算结果表明，高功率，短脉冲激光生产的高温等离子体在快速冷却条件下能产生软Ｘ射的线激光增益。