Defect Structures in 4H-SiC Irradiated with Highly-energetic ^20Ne^4＋ and ^120Xe^26＋ Ions

The study of damage evolution in silicon carbide bombarded with energetic helium ions is important for the use of this material in future fusion reactors. Heavier inert gas atoms like Ne and Xe have similar behavior of diffusion and clustering with helium, and the comparison of damage accumulation behavior between energetic helium and heavier inert gas ions can reveal important aspects of underlying mechanisms. As an extension of our     

有机化合物电子光谱中的助色基及其作用机理探讨(Ⅰ)

本文就电子光谱中助色基的作用进行了讨论 ,认为不能一概地认为助色基能使与之相连的生色基最大吸收波长统统发生红移 ,而应具体问题具体分析 :对于n→π 来说 ,一方面助色基的p轨道和生色基的最低π 反键空轨道相互作用 ,使π 反键轨道能量上升 ,另一方面助色基的p轨道和生色基的n轨道正交 ,n轨道能量基本保持不变 ,因此n→π 跃迁能增加 ,吸收波长发生蓝移。对于π→π 跃迁来说 ,助色基的p轨道和生色基的最高π成键轨道相互作用生成的新的最高π成键轨道 ,能量虽然有所升高 ,但升高的程度与π 反键轨道升高的程度相比 ,在一些化合物中π轨道升高程度较大 ,因而π→π 跃迁能减小 ,吸收波长发生红移 ;在另一些化合物中π轨道升高程度较小 ,因而π→π 跃迁能增加 ,吸收波长发生蓝移。     

Nanocavity Shrinkage and Preferential Amorphization during Irradiation in Silicon

We model the recent experimental results and demonstrate that the internal shrinkage of nanocavities in silicon is intrinsically associated with preferential amorphization as induced by self-ion irradiation. The results reveal novel thermodynamic nonequilibrium properties of such an open-volume nanostructure in condensed matter and also of covalently bound amorphous materials both at nanosize scale and during ultrafast interaction with energetic beam.     

直接求线性规划可行基的一种方法

本文给出直接求线性规划问题基可行解的一种简易方法,该方法既避免了引入人工变量,减少存储,一般又能较快地得到一个较好的基可行解.     

硅色敏器件对复色光色差辨识能力的数值分析

对复色光的光谱功率分布和色敏器件光谱响应的实验曲线进行了函数拟合，采用Mathematica 4．2计算了具有不同峰值波长和半高宽的高斯分布的复色光在色敏器件中产生的电流比．计算结果表明，待测复色光的峰值波长和半高宽变化对两种典型的色敏器件的输出信号影响的权重比分别为100：1和10：1。权重比说明色敏器件的输出电流比随峰值波长和半高宽的变化非常灵敏，但两者权重不同，其中峰值波长的变化影响更为显著，是影响复色光颜色变化的主要因素．数值分析的结果表明，硅双结色敏器件对复色光色差有良好的辨识能力．两种器件权重比的差异说明了器件制作工艺与其辨识能力的关系，为器件合理设计提供了理论依据．     

Modified Photoluminescence by Silicon-Based One-Dimensional Photonic Crystal Microcavities

photoluminescence (PL) lrom one-dimensional photonic band structures is investigated. The doped photonic crystal with microcavitles are fabricated by using alternating hydrogenated amorphous silicon nitride (a-SiNx:H/a-SiNy:H) layers in a plasma enhanced chemical vapour deposition (PECVD) chamber. It is observed that microcavities strongly modify the PL spectra from active hydrogenated amorphous silicon nitride (a-SiNx:H) thin film. By comparison, the wide emission band width 208nm is strongly narrowed to 11 nm, and the resonant enhancement of the peak PL intensity is about two orders of magnitude with respect to the emission of the λ/2-thick layer of a-SiNx:H. A linewidth of Δλ=11 nm and a quality factor of Q=69 are achieved in our one-dimensional a-SiNz photonic crystal microcavities. Measurements of transmittance spectra of the as-grown samples show that the transmittance resonant peak of a cavity mode at 710nm is introduced into the band gap of one-dimensional photonic crystal distributed Bragg reflector (DBR), which further verifies the microcavity effects.     

Ti—Si沸石表面吸附物种的TPSR—TPD研究

氯丙烯在不同催化剂表面上吸附的ＴＰＤ结果表明在ＴＳ－１上有三重附峰，而在ＴｉＯ２／Ｓｉｌｉｃａｌｉｔｅ上仅有单峰，Ｈ２Ｏ２或分子Ｏ２在催化剂表面吸附后，在脱附物种中可用质谱检测到原子Ｏ（１６）物种；说明Ｈ２Ｏ２或分子Ｏ２在样品表面存在解离吸附；并发现解离子分子Ｏ２的活性很低，ＴＳ－１能同时吸附内烯和Ｈ２Ｏ２，而在ＳｉＯ２／Ｓｉｌｉｃａｌｉｔｅ表面的吸附却与吸附顺序有关，环氧化活性顺序如下：ＴＳ－１     

在空间转动变换下的角动量本征态随转角的参变数演变的路径积分

研究在空间转动变换下,直接采用转轴的方向角与转角描述角动量本征态的演变过程,并建立一般角动量转动矩阵元以及多重转动矩阵元随转角θ的参变数λ(0→θ)演变的路径积分;给出处理泛函(路径)积分为普通多重积分的一般方法.