Structural and Electrical Characteristics of Pb（Zr0.53,Ti0.47）O3 Thin Films Deposited on Si （100） Substrates

Pb(Zr0.53, Ti0.47)O3 (PZT) films were directly deposited on Si substrates without a buffer layer by pulsed laser deposition. Only(110)-oriented PZT peaks (other than Si substrate peaks) were observed from the XRD data. The electrical properties of the PZT/Si capacitor were characterized in terms of both the capacitance versus voltage (C-V) and current versus voltage (I-V) measurements. The clockwise trace of the C-V curve shows ferroelectric polarization switching, as is expected. From the I-V curves, the Schottky emission and spacecharge-limited-current behaviour are found to be the mainly leakage current mechanism in a certain electric field range in the negative and positive bias, respectively.     

纳米硅量子线的发现与研究

一维纳米材料是当今介观物理学研究的前沿领域．文章报道了一种利用脉冲激光成功地制备纯度高、直径分布均匀的纳米硅量子线（ＳｉＮＷｓ）的方法，介绍了纳米量子线的形貌、显微结构、生长机理和物理性能研究的最新结果．纳米硅量子线的发现具有重要的科学意义和潜在的应用前景．     

ICP-AES测定钛基复合材料中镍、钕和铁的研究

采用ICP－AES法对钛基复合材料中的合金元素镍、钕、铁的测定进行了研究，着重进行了基体元素及待测元素镍、钕、铁之间干扰试验及各元素在测定浓度范围内的线性相关性试验，进行了酸度试验，测定了钛基复合材料中3种元素的含量，得到了较好的精密度和准确度。方法简便、可靠，获得满意的分析结果。     

应变Si1-xGex层中p型杂质电离常温和低温特性

本文采用解析的方法计算了应变Si1-xGex层中p型杂质电离度与Ge组分x、温度T以及掺杂浓度N的关系.发现常温时,在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度的先变小,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加先变大,而后几乎不变;重掺杂时,杂质电离能变为0后,杂质电离度为1.低温下,轻掺杂时,载流子低温冻析效应较为明显,杂质的电离度普遍较小,当掺杂浓度大于Mott转换点时,载流子冻析效应不再明显,电离率迅速上升到1.在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度先变小,后变大,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加变大;重掺杂时,杂质电离能变为0后,杂质电离度为1.     

正丁基苝四羧酸二酰亚胺的晶型和性能研究

文章合成了N,N'-二正丁基苝四羧酸二酰亚胺,并纯化、调晶,进行了IR、元素分析、X射线等测定.分析该化合物在DMF中的紫外光谱(最大吸收波长524.80 nm)、荧光光谱(最大发射波长539.0 nm)、Stokes位移(数值15 nm)等光谱性质.在400～700 nm范围内,α晶型薄膜紫外-可见吸收出现很强的吸收峰,且由β型变为α型,最大吸收波长有明显的红移(545 nm变为580 nm).X射线粉末衍射也反映出α晶型的2θ在26.0°处衍射峰CPS为2 508,β型在25.2°为1 891.α,β晶型作为电荷产生材料制得的功能分离型有机光导体,在光源滤波波长λ=532 nm曝光下,测得含α,β感光体达到饱和电位的时间分别为46,93.98 s,光衰电位(5.3千伏电压负充电电晕,1～2 s后的表面电位)分别为727和525 V,半衰曝光量分别为4.32,4.34μJ·cm-2,残余电位分别为30和45 V等光导性能数值.     

一种构造正交小波基的新方法

本文给出了构造正交小波基的一种新的方法,主要是通过改造钟形函数来构造有具体表达式的小波母函数,在光滑性,局部性等性质上优于一般的构造方法,其收敛于零的阶数可达到O(|t|~(-N)),N≥4。而且更进一步在S空间上构造出收敛更快的小波母函数。     

Na2CO3调质钙基脱硫剂硫化机理实验研究

对经Na2CO3溶液调质石灰石煅烧产物CaO的物理结构及硫化特性进行了研究,发现同等条件下调质后石灰石煅烧产物CaO(M-CaO)比未经调质的CaO(N-CaO)具有更高的钙转化率.利用XRD技术对CaO晶体结构进行了测定,通过比较二者的晶胞参数和晶格畸变度等并结合其孔特性,证实M-CaO之所以比N-CaO具有更高的钙转化率,是由于M-CaO比N-CaO具有更高的晶体缺陷浓度,使得在硫化反应过程中通过产物层的扩散具有更高的离子扩散率.     

Experimental Study of Capillary Effect in Porous Silicon Using Micro-Raman Spectroscopy and X-Ray Diffraction

We investigate the capillary effect and the residual stress evolution in the wetting, drying and rewetting stages of porous silicon using x-ray diffraction and micro-Raman spectroscopy. A reversible capillary effect and an irreversible oxidation effect are the driving forces for the residual stress evolution. The lattice expansion of the porous-silicon layer is observed to decrease slightly by x-ray diffraction and the tensile residual stress increases rapidly by micro-Raman spectroscopy, with the change of about 82 MPa for the oxidation effect and the change of 2.78 GPa (enough for cracking) for the capillary effect. Therefore, the capillary effect plays a major role in the residual stress evolution in the stages. A simple microscopic liquid-bridge model is introduced to explain the capillary effect and its reversibility. The capillary emergence has a close relation with a great deal of the micro-pore structure of porous silicon.