激光致晶态Ag11In12Te26Sb51相变介质光学常量的研究

研究了结晶度对Ag11In12Te26Sb51相变薄膜光学常数的影响。用初始化仪使相变薄膜晶化，改变晶化参量得到不同的结晶度，当转速固定时，随激光功率的增加，折射率基本随之减小，消光系数先是增大，而后减小；当激光功率固定时，随转速的增大，折射率也随之增大，消光系数也是先增大后减小。非晶态与晶态间的变换、薄膜微结构的变化（包括晶型的转变和原子间键合状态的变化）以及薄膜内残余应力的影响Ag11In12Te26Sb51相变薄膜复数折射率的主要原因。测量了单层膜的透过率和CD－RW相变光盘中Ag11In12Te26Sb51薄膜非晶态和晶态的反射率。     

求解Ar=b极小l1模解的一种有效算法

在地震反演中,我们遇到了求解这样一个问题这里文〔2〕提出了解(I)的一种迭代方法,实质上是一种;单纯形方法,但这种方法没有充分利用问题(ML I)的特点,迭代时每步下降不是最优的.本文提出一种新的有效算法,使得迭代时每步下降最大,·它可以看作单纯形算法的改进,大量计算宝例表明该方洛非常右竹早外_ =fr了拼一先y1许置景一太寸怂申了     

Solutions for a Mode Ⅲ Growing Crack in a Piezoelectric Plane Under Two Kinds of Electric Boundary Conditions ＊

The solutions for a mode Ⅲ crack growing along an arbitrary propagation path in a piezoelectric plane are studied under the impermeable surface condition and the electrical contact surface condition respectively. According to the two kinds of electric boundary conditions, the Hilbert and Riemann boundary value problems in a half-plane including opening smooth arc are obtained from the theoretical analysis. Moreover, the equipollence of the solution formed under these two electric boundaries is proved, and unified solutions for the stress and electric displacement distribution in the crack-tipfield of the piezoelectric plane are achieved.     

High—Efficiency Organic Double—Quantum—Well Light—Emitting Devices Using 5,6,11,12—Tetraphenylnaphthacene Sub—monolayer as Potential Well

The double-quantum-well organic light-emitting devices of indium-tin-oxide (ITO)/NPB (50nm)/rubrene (0.05nm)/NPB (4nm)/rubrene (0.05nm)/Alq3 (50nm)/LiF (0.5nm)/Al were fabricated, in which N,N-bis-(1-naphthyl)-N,N‘-diphenyl-1,1‘-biphenyl-4,4‘‘‘‘‘‘‘‘-diamine (NPB) is used as a barrier potential or hole transport layer, tris (8-hydroxyquinoline) aluminium (Alq3) used as electron transport layer, and 5,6,11,12-tetraphenylnaphthacene (rubrene) as a potential well and emitter. The brightness can reach 18610cd/m^2 at 13V. The maximum electroluminescent efficiency of the device was 6.61cd/A at 7V, which was higher than that of common dope-type devices. In addition, the electroluminescence efficiency is relatively independent of the drive voltage in the range from 5 to 13V.     

Reduction of Dislocations in GaN Epilayer Grown on Si （111） Substrates using a GaN Intermedial Layer

GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AIN/Si（111） substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional （3D） mode to the 2I） one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy （TEM） measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.     

一种非刚性医学图像点匹配方法

提出了一种非刚性点匹配的算法并把其运用于医学图像配准．该算法采用信号滤波的方法来获得点集间的匹配信息，并运用松弛标记法将各点邻域关系对模糊的匹配信息进行迭代获得明确的匹配关系．在此基础上，利用高斯径向基函数来描述点模式间的弹性形变，在基本的迭代框架下实现问题的求解．实验结果显示在形变程度为5％、出格点比率50％和噪声标准差为5％的情况下该算法的匹配误差能控制在0．13以下，表明了该算法的鲁棒性和有效性，较好地解决了医学非刚性形变的点匹配问题．     

First Total Synthesis of 12-Hydroxy-13-methylpodocarpa-9, 11, 13-trien-3-one

12-Hydroxy-13-methylpodocarpa-9, 11, 13-trien-3-one 9 was isolated from the twigs ofCroton salutaris1. Many diterpenes exhibit significant bioactivities, such as antibac-terial and antitumour and 9 has a rare structure. In order to study the relationshipb…     

Non-Achievability of Metal-Insulator Transition in Two-Dimensional Systems

We present a simple demonstration of the nonfeasibility of metal-insulator transition in an exactly two-dimensional （2D） system. The Hartree-Fock potential in the 3D system is suitably modified and presented for the 2D case. The many body effects are included in the screening function, and binding energies of a donor are obtained as a function of impurity concentration so as to find out the possible way leading metal-insulator transition in the 2D system. While solving for the binding energy for a shallow donor in an isolated well of a GaAs/Ga1-x Als As superlattice system within the effective mass approximation, it leads to unphysical results for higher concentrations. It shows that the phase transition, the bound electron entering into the conduction band whereby （H）min=0, is not possible beyond this concentration. The results suggest thai a phase transition is impossible in 213 systems, supporting the scaling theory of localization. The results are compared with the existing data available and discussed in the light of existing literature.     

基团共轭效应研究Ⅱ：^13C核磁共振的化学位移与取代基的共轭效应强度

引言在定量和定性研究有机化合物的结构与性质的关系中,最广泛使用的是Hammett等所提出的σ_m、σ_p等取代基常数以及基团的诱导(场)效应和共轭效应常数。在建立基团的共轭效应常数方面,人们做了大量的工作,但多数工作是基于对基团的Hammett常数σ的人为分解上,建立的模型和分解方式(系数因子)不同,则得到不同的结果。另一方面纯理论计算工作大多引入较多参数,使计算复杂和使用不便。作者曾在建立表征诱导效应大小的     

荧光XAFS研究Si可稀浓度杂质的区域结构

荧光ＸＡＦＳ研究Ｓｉ晶体中等电子，缺电子和富电子杂质原子的区域环境结构。结果表明杂质原子的电子构型决定了杂质原子对Ｓｉ区域晶格形变的影响。相对于共价键长ＲＳｉ－Ｓｉ（０．２４０ｎｍ）来说，富电子杂质Ａｓ导致Ｓｉ晶格在Ｓｉ（１１１）方向的ＲＡｓ－Ｓｉ键长产生０．００４ｎｍ的反应增长，等电子杂质Ｇｅ的Ｒ－Ｇｒｅ－Ｓｉ和缺电子杂质Ｇａ和ＲＧａ－Ｓｉ键长收缩０．００２ｎｍ。