红外折/衍混合离轴望远系统设计

本文针对空间光学系统轻型特点,设计了一个二元光学折/衍混合红外反射式望远系统。采用了离轴式格里高利(Gregorian)结构形式,消除了望远系统中的中心遮拦问题。用衍射光学元件校正系统象差,使反射面为球面,二元光学表面尺寸比施密特(Schmidt)校正板(位于入瞳处)缩小于3～4倍,光学设计运用OSLO软件,光学系统的通光孔径φ=120mm,焦距f=-1000mm,波长λ=4.3μm,视场2ω=2°×6°(子午×弧矢),分辨率Res=0.05mm,MTF≥0.4(空间频率fre≤10cl/mm).     

156Tm核的高自旋态实验研究

利用122.5MeV的¹⁹F束流, 通过¹⁴²Nd(¹⁹F,5n)¹⁵⁶Tm熔合蒸发反应布居了¹⁵⁶Tm核的高自旋态, 测量了γ-γ符合及DCO比值, 建立了一个有29条能级, 33条γ跃迁的能级纲图. 新增加了20条γ跃迁, 18条能级. 将能级自旋推高到(34^－).     

用超磁致伸缩调谐光纤光栅的光分/插复用器

提出并研究了一种新型多信道切换的全光分/插复用器,它主要由光纤Bragg光栅(FBG)和一对光环行器组成.采用了一种高效的超磁致伸缩材料(GMM)使FBG产生有效的Bragg波长偏移.用控制电流来调控FBG的应变和Bragg波长偏移.用4只相同的FBG与波长叠加技术相结合,可建立能提供15种不同下路信道方式的OADM.     

Design and Fabrication of 1.06 μm Resonant-Cavity Enhanced Reflective Modulator with GaInAs/GaAs Quantum Wells

A resonant-cavity enhanced reflective optical modulator is designed and fabricated, with three groups of three highly strained InGaAs/GaAs quantum wells in the cavity, for low voltage and high contrast ratio operation. The quantum wells are positioned in antinodes of the optical standing wave. The modulator is grown in a single growth step in an molecular beam epitaxy system, using GaAs/AlAs distributed Bragg reflectors as both the top and bottom mirrors. Results show that the reflection device has a modulation extinction of 3 dB at -4.5 V bias.     

基于界面跟踪方法的汽蚀模型和算法的有效性验证

针对两相附着汽蚀流动机理,基于界面跟踪方法发展了新的汽蚀模型和算法。所发展的汽蚀模型和算法不仅考虑了液相／气相界面处的压力差,而且考虑了耦合Reynolds-Averaged Navier-Stokes方程求解技术得到的流场压力梯度信息来迭代计算附着汽蚀形状。采用具有试验数据的半球形头部圆柱体汽蚀绕流作为算例来验证所提出的汽蚀模型和算法的有效性。采用不同的网格数和松弛因子数值验证了发展的汽蚀模型和算法的有效性。三种汽蚀数下的数值计算结果得到的压力系数分布与试验数据完全吻合。结果表明所提出的汽蚀模型和算法能够准确模拟出汽蚀发生点和汽蚀长度。     

有机/无机异质结薄膜发光二极管

聚合物发光二极管（LED）自从Burrou吵es等于1990年首次报导PPV的电致发光［‘］以来，由于聚合物半导体具有热和化学性能的稳定，克眼了有机小分子材料容易晶化的优点，在平板显示领域必将占有一席之地，从而吸引了许多科学家投身到这一领域来．众所周知，要想实现LED的实用化     

ZnO对Ag/SiO2催化剂银的分散作用及对吲哚合成稳定性的影响

将ZnO助剂加到由苯胺和乙二醇一步合成吲哚的Ag/SiO2催化剂中,发现ZnO助剂能大大提高催化剂的稳定性.XRD和TEM表征首次得到:ZnO是结构型助剂,它能使银很好地分散在SiO2表面上,并可有效地抑制反应过程中银粒子的烧结.     

Pt对Mo基催化剂还原-硫化过程的影响

采用脉冲硫化、连续硫化、程序升温还原、程序升温及程序降温电导及X射线衍射等方法研究了贵金属Pt对MoO3催化剂还原-流化过程的影响及Pt对MOS2配位不饱和活性中心形成的影响．结果表明，Pt担载或在MoO3上可以促进MoO3的还原-硫化，使MoO3的还原-硫化温度大大降低Pt担载在MoSw上可促进MoS2的部分还原形成配位不饱和的钼中心     

电镀烧结法制备Ti/SnO2-Sb2O4电极的研究

The Ti/SnO₂-Sb₂O₄ electrode has been prepared by the electroplate-sinter method. The effect of SbCl₃ adding amount and sintering temperature on its electrode lifetime and oxygen evolution potential were investigated by means of EDX, SEM and XRD analysis. The results indicated that the electrode appeared the best performance when the SbCl₃ adding amounts was 0.2g and the sintering temperature was 550℃. In optimized conditions Ti substrate was entirely covered by SnO₂-Sb₂O₄ and the combinations among them were tight. Due to the use of electroplate method, the electrical conductivity, the oxygen evolution potential and the electrode lifetime were increased, so the elec-tro-catalytic activity and the electrochemical stability of the prepared electrode were found to be superior.