GaN Films Grown on Si （111） Substrates Using a Composite Buffer with Low Temperature A1N Interlayer

A GaN interlayer between low temperature （LT） A1N and high temperature （PIT） A1N is introduced to combine HT AIN, LT A1N and composition-graded A1GaN as a novel buffer layer for GaN films grown on Si （111） substrates. The crystal quality, surface morphology and strain state of the GaN film with this new buffer are compared with those of GaN grown on a conventional buffer structure. By changing the thickness of LT A1N, the crystal quality is optimized and the crack-free GaN film is obtained. The in-plane strain in the GaN film can be changed from tensile to compressive strain with the increase in LT A1N thickness.     

Magnetic Properties of Co-Doped TiO2 Films Grown on TiN Buffered Silicon Substrates

Co-doped TiO2 thin films are grown on TiN buffered silicon substrates by the pulsed laser deposition method and then hydrogenated. Transmission electron microscopy and high-angle annular dark-field scanning transmission electron microscopy measurements have shown that the TiN buffer layer can suffer a 400℃ deposition temperature and prevent the growth of silicon dioxide on silicon. After that, the room temperature ferromagnetism behaviors are observed in the hydrogenated samples, which are measured by the alternating gradient magnetometer. X- ray photoelectron spectroscopy and x-ray absorption fine structure measurements have revealed the existence of cobalt clusters. According to the material analysis, the magnetic behavior after hydrogenation is suggested to be induced by the enhancement of cobalt dusters.     

Effects of Carrier Gas on Carbon Incorporation in GaN

GaN epitaxial layers were grown on Si （111） substrates by metal organic chemical vapor deposition. Carbon concentrations in the films grown in different ambients were measured by secondary ion mass spectrometry. The results show that the carbon incorporation is strongly dependent on the H2 flow rate when the NH3 flow rate is small, but insensitive to the H2 flow rate when the NH3 flow rate is sufficient large. We conclude that H2 can inhibit the dissociation of NH3 and result in a less active N source; an insufficiently active N source causes more N vacancies, which enhances carbon incorporation.     

Optical Constants of SiO2 Films Deposited on Si Substrates

SiO2 films were deposited on single-crystalline silicon substrates by ion beam sputtering technology. Optical constants of SiO2 films are calculated from spectroscopic ellipsometry data, transmittance spectra and reflectance spectra by WVASE32 software, and the best fitted method is oStained for calculating optical constants of dielectric materials in the ultraviolet-visible-infrared （UV-VIS-IR） range. In the UV-VIS-NIR spectral range, refractive indices of SiO2 films are calculated separately by both ellipsometry data and reflectance spectra, and the obtained results are almost the same. Complex dielectric functions of SiO2films in the IR spectral range are accurately calculated with infrared transmission spectra using the GenOsc model. The obtained accuracy complex refractive index of SiO2 films in the wavelength region from 0.19μm to 25 #m is of great importance for the design of high quality coatings, such as ultra-low loss coating.     

衬底位置对化学气相沉积法制备的磷掺杂p型ZnO纳米材料形貌和特性的影响

采用化学气相沉积方法,在无催化剂的条件下,通过改变衬底位置在Si(100)衬底上制备出了高取向的磷掺杂ZnO纳米线和纳米钉.测试结果表明,当衬底位于反应源上方1.5 cm处时,所制备的样品为钉状结构,而当衬底位于反应源下方1 cm处时样品为线状结构.对不同形貌磷掺杂ZnO纳米结构的生长机理进行了研究.此外,在ZnO纳米结构的低温光致发光谱中观测到了一系列与磷掺杂相关的受主发光峰.还对磷掺杂ZnO纳米结构/n-Si异质结I-V曲线进行了测试,结果表明,该器件具有良好的整流特性,纳米线和纳米钉异质结器件的开启电压分别为4.8和3.2 V.     

含羟基结构熔石英光电性质的第一性原理研究

熔石英是高功率激光装置中广泛使用的激光透镜材料,采用第一性原理结合平面波赝势方法,研究了熔石英材料中羟基结构的生成模式,系统计算了材料的电子态密度、差分电荷密度、原子电荷布居分布,分析了包含羟基熔石英材料的光学跃迁模式,研究结果表明:熔石英中的三配位硅原子缺陷在禁带中生成了两条缺陷能级,分别位于7.8和8.8 eV;研究还发现氢原子与五配位硅原子发生相互作用生成羟基结构,该反应还使三配位硅原子的杂化方式由sp~2变为sp~3,这种羟基结构会影响体系的电子结构,使原有的7.8和8.8ev缺陷能级消失,并在费米面上生成一条半占据态缺陷能级,引起激发能为6.2 eV的光学跃迁。     

CO_2激光光栅式扫描修复熔石英表面缺陷的实验研究与数值模拟

基于熔石英材料对波长为10.6μm的CO2激光具有强吸收作用这一特点,提出采用CO2激光光栅式多次扫描修复熔石英光学元件表面密集分布的划痕和抛光点等缺陷的方法.实验结果表明,在合理的扫描参数下,元件表面的划痕和抛光点等缺陷可被充分地消除.损伤阈值测试结果表明,表面划痕和抛光点等缺陷被完全消除的元件的损伤阈值可回复到或超过基底的损伤阈值.同时结合有限元软件Ansys的模拟结果分析了CO2激光扫描修复及消除元件表面划痕和抛光点等缺陷的过程.本文为消除元件表面划痕和抛光点等缺陷提供了非常有意义的参考.     

高温预生长对图形化蓝宝石衬底GaN薄膜质量的提高

在图形化蓝宝石衬底生长低温缓冲层之前,通入少量三甲基镓（TMGa）和大量氨气进行短时间的高温预生长,通过改变TMGa流量制备了4个蓝光LED样品。MOCVD外延生长时使用激光干涉仪实时监测薄膜反射率,外延片使用高分辨率X射线衍射（002）面和（102）面摇摆曲线估算位错密度,并使用光致发光谱表征发光性能,制备成芯片后测试了正向电压和输出光功率。结果表明,高温预生长可促进薄膜的横向外延,使得三维岛状GaN晶粒在较小的薄膜厚度内实现岛间合并,有利于降低位错密度,提高外延薄膜质量,LED芯片的输出光功率的增强幅度达29.1%,而电学性能无恶化迹象;但高温预生长工艺中TMGa的流量应适当控制,过量的TMGa导致GaN晶粒过大,将延长岛间合并时间,降低晶体质量。     

机械抛光铜金属表面对罗丹明的荧光增强效应

应用激光光谱学方法,研究了铜表面Rh6G分子的荧光增强效应对于金属衬底表面所形成的氧化层的依赖关系,探索了由于空气氧化而形成的氧化层在表面荧光增强效应中的重要意义和作用机理.实验采用罗丹明6G荧光探针分子,在532 nm连续光激发下,研究机械抛光铜金属衬底在经历不同氧化时间,对吸附其表面的Rh6G分子的荧光增强效果.研究结果表明,适当控制金属样品表面的氧化时间,金属铜表面对若丹明分子的荧光发射表现出猝灭和增强效应.金属氧化层起到了隔离荧光分子与金属表面的作用,减弱了由于激发态荧光分子向金属转移非辐射能量和在金属表面诱导反向偶极子而产生的荧光猝灭效应,从而提高了纯金属铜表面荧光增强辐射行为.因此在微纳金属衬底的荧光增强效应研究中,采用适当的实验手段,精确控制隔离层间距,是表面增强光谱获取的重要途径之一.     

高功率激光运转条件下大模场掺镱石英光纤模式特性的仿真研究

在高功率激光运转条件下,掺杂稀土离子的量子亏损和玻璃材料的本征吸收均会造成光纤放大器中增益光纤温度的整体上升与梯度分布。在热平衡状态下,光纤材料的热光效应将会诱导光纤横向折射率的再分布,引发高功率激光运转条件下增益光纤模式特性的改变。为此,利用多物理场有限元建模的数值计算方法对高功率激光运转条件下大模场掺镱石英光纤的热致模式特性展开系统研究,分析总结大模场增益光纤的模式特性在不同激光运转功率、增益光纤设计参数(纤芯直径、数值孔径、热光系数)和光纤弯曲使用条件下的变化规律。结果表明,随着激光运转功率的增加,纤芯和包层之间的温差会变大,从而导致光纤的归一化参数V值增大,最终使模式的传输损耗系数减小,模式在纤芯区域的功率因子增大。