金属有机物化学气相沉积法生长Ga2(1-χ)In2χO3薄膜的结构及光电性能研究

采用金属有机物化学气相沉积(MOCVD)法在蓝宝石(0001)衬底上制备出了Ga2(1-χ)In2χO3(χ=0.1-0.9)薄膜,研究了薄膜的结构、电学和光学特性以及退火处理对薄膜性质的影响.测量结果表明:当In组分χ=0.2时,样品为单斜β-Ga2O3,结构;χ=0.5的样品,薄膜呈现非晶结构,退火处理后薄膜结构得到明显的改善,由非晶结构转变为具有(222)单一取向的立方In2O3结构;对于χ=0.8,薄膜为立方In2O3,结构,退火后薄膜的晶体质量得到提高.在可见光区薄膜本身的透过率均达到了85%以上,带隙宽度随样品中Ga含量的改变在3.76-4.43 eV之间变化,且经退火处理后带隙宽度明显增大.     

熔石英紫外激光初始损伤形态分析

 采取355 nm激光脉冲辐照熔石英样品,利用Nomarski微分干涉差显微镜、原子力显微镜和扫描电子显微镜观测手段对前后表面产生的损伤点进行了观察分析。对前后表面损伤形态做出详细的描述和分类,从理论上对每种损伤类型产生的条件与机理做出推测。实验结果表明：熔石英前表面存在小麻点群损伤和星状裂纹损伤两种损伤形态,横向尺寸分别为0.8～2.5和1.0～5.5 μm;后表面存在小麻点群损伤、壳状剥离损伤和火山口3种损伤形态,损伤横向尺寸分别为0.48～1.33,4～20和12～30 μm。实验证明了1 μm尺度损伤点的产生与再沉积层密切相关。     

石英缝管原子捕集-火焰原子吸收光谱法测定化探样品中的铅

采用石英缝管原子捕集技术,可实现原子高效捕集和瞬间释放,使火焰原子吸收法测定铅的灵敏度比常规FAAS测定铅的灵敏度提高三至四倍。精密度与火焰原子吸收法相同。通过实验,建立了石英缝管原子捕集-火焰原子吸收光谱法测定化探样品中铅的分析方法,方法的检出限（CL）可达3.82μg/g,精密度（RSD）可达1.72%,应用于化探样品中铅的测定效果令人满意。     

啁啾脉冲的光谱整形

为了获得更高功率的输出激光脉冲,需要将注入到主放大链的种子脉冲进行光谱整形来补偿放大过程中的增益窄化效应.利用展宽器中啁啾脉冲的光谱具有空间排布的特点.采用石英晶体平凸透镜空间光强度调制器间接地实现窄带激光脉冲的光谱整形,在展宽器的输出端获得了光谱呈平顶分布的种子啁啾脉冲.通过调节偏振片的透偏方向,可方便地调谐输山脉冲光谱的形状.     

生长温度对ZnO薄膜晶体质量和发光特性的影响

采用激光脉冲沉积法在Si(100)衬底上生长ZnO薄膜,衬底温度分别为室温,200℃,300℃,400℃和500℃.用X射线衍射仪、拉曼光谱、扫描电子显微镜对薄膜的微结构进行了测量,并测量了室温下薄膜的光致发光特性.结果表明,300℃时.ZnO具有最佳择优取向,随着衬底温度升高.衍射峰半峰全宽减小,薄膜晶粒尺寸增大,400℃时,薄膜具有各向等大的品粒尺寸.同时拉曼谱结果显示,薄膜内部的缺陷随衬底温度变化无明显差别,应力表现为张应力,400℃时应力最小,紫外发光峰在衬底温度为400℃时最强,而黄绿光带最弱.在减少薄膜缺陷,提高择优长向和晶粒尺寸的同时.使晶粒横向尺寸和纵向尺寸尽可能相同,可极大提高薄膜的发光特性.     

Enhanced Photoluminescence of InGaN/GaN Green Light-Emitting Diodes Grown on Patterned Sapphire Substrate

Green InGaN/GaN based light-emitting diodes （LEDs） are fabricated both on planar and wet-etched patterned sapphire substrates by metalorganic vapour phase epitaxy （MOVPE）. Their photoluminescence （PL） properties of the two samples are studied. The results indicate that the PL integral intensity of the green LED on the patterned substrate is nearly two times of that on the planar one within the whole measured temperature range. The enhanced PL intensity in the green LED on the patterned substrate is shown completely contributed from the extraction efficiency, but not from the internal quantum efficiency. The conclusion is supported by temperature-dependent PL analysis on the two samples, and the mechanisms axe discussed.     

Effect of Different Substrate Temperature on Phosphorus-Doped ZnO Thin Films Prepared by PLD on Sapphire Substrates

Phosphorus-doped ZnO （ZnO：P） thin films are deposited on a c-plane sapphire in oxygen at 350℃, 450℃, 550℃ and 650℃, respectively, by pulsed laser deposition （PLD）, then all the ZnO：P samples are annealed at 650℃ in oxygen with a pressure of 1 × 10^5 Pa. X-ray diffraction measurements indicate that the crystalline quality of the ZnO：P thin films is improved with the increasing substrate temperature from 350℃ to 550℃. With a further increase of the deposition temperature, the crystalline quality of the ZnO：P sample is degraded. The measurements of low-temperature photoluminescence spectra demonstrate that the samples deposited at the substrate temperatures of 350℃ and 450℃ show a strong acceptor-bound exciton （A^0X） emission. The electrical properties of ZnO：P films strongly depend on the deposition temperature. The ZnO：P samples deposited at 350℃ and 450℃ exhibit p-type conductivity. The p-type ZnO：P film deposited at 450℃ shows a resistivity of 1.846Ω·cm and a relatively high hole concentration of 5.100 × 10^17 cm^-3 at room temperature.     

Crystal Structure and Magnetic Properties of Sm2 Fe17-Nδ Thin Films Deposited on Si （100） Substrates

This work focuses on the crystal structure and magnetic properties of the hard magnetic Sm2 Fe17 Nδ films prepared by dc magnetron sputtering and the subsequent nitriding process. The XRD, EDS, M-H and M-T data show that N enters the cell structure and the films with the single Th2Zn17 phase are obtained when the nitriding temperature varies from 300 to 400℃, thus the maximum value of the coercivity Hc reaches 2561.7Oe. However, the Sm2Fo17 phase decomposes to the StuN nonmagnetic phase and the α-Fe soft magnetic phase with further increasing nitriding temperature, which corresponds to the decreasing Hc. Furthermore, the easy magnetization direction （EMD） is found to locate randomly in the film plane. This texture can not give an excellent MR/Ms higher than the Stoner-Wohlfarth limitation （MR/Ms = 0.5）, which agrees well with the observed low MR/Ms （0.58）. It is suggested that the magnetization reversal process is dominated by the nucleation mechanism according to the initial magnetization curve and the dependence of Hc on the field H.     

柔性衬底白色有机电致发光器件的制备及其性能

采用以ITO为导电层的柔性透明PET基片作为衬底,以2-(2-羟基苯基)苯并噻唑螯合锌(Zn(BTZ),)作为发光层制备出结构为PET／ITO／PVK：TPD／Zn(BTZ)2／Al明亮的近白色柔性有机小分子电致发光器件。发光的色坐标值为x=0．242,y=0．359,在25V的直流电压驱动下,亮度为1000cd／m^2,量子效率达到了0．30％。并进一步在Zn(BTZ)2中掺入橙红色染料Rubrene,制成PET／ITO／PVK：TPD／Zn(BTZ)2：Rubrene／Al结构器件。实现了纯白色发光(色坐标值：x=0．339,y=0．339),非常接近于白色等能点,驱动电压为25V时器件的亮度达1200cd／m^2,且量子效率达0．35％。最后对器件的发光性能及机理进行了深入的研究和探讨。