紫外光电材料ZnO的反应溅射制备及研究

采用直流反应溅射法分别在Si(111),Si(001),及K4玻璃衬底上制备ZnO薄膜,研究了氧氩比、衬底温度以及退火处理对于晶体结晶质量的影响,发现生长过程中的退火处理提高了薄膜质量和晶面取向.通过优化生长条件,在衬底温度为350℃,氧氩比为1:2的条件下生长出了XRD半高宽为01°、C轴取向高度一致的ZnO薄膜.     

直流电表的选择使用

测量仪器的准确度指测量仪器的示值接近真值的能力。     

直流磁控溅射制备YBCO高Tc超导薄膜过程中靶成分的在线监测

本阐述了用单色仪和光电倍增管对平面直流磁控溅射制备ＹＢＣＯ高Ｔｃ超导薄膜过程中靶的放电成分变化情况进行在线监测的实验方法，设备和过程，得到了Ｏ２：Ａｒ＝１：４时，靶表面成份随时间变化的关系和相应薄膜的质量，并对实验结果进行了讨论。     

时间分辨傅氏变换红外光谱方法中的定时直流成分

在常规的傅里叶变换红外光谱学中，干涉图的直流成分为∫＾∞０Ｂ（σ）ｄσ，而在时间分辨ＦＴＩＲ中，直流成分Ｉｄｅ成为∫（∞，０）Ｂ（σ，τ）ｄσ，即与信号出现的时间τ有关，称为定量直流成分。     

电弧-AES法测定金属硅中12个杂质元素

用直流电弧粉末法在氩气气氛中摄谱，消除硅带干扰，采用铍为内标，直接测定金属硅中12个杂质元素，此法较化学光谱法具有操作简便、快速，试剂耗量少；较化学法和分光光度法更加优越，能同时测定12个元素，更能反映金属硅的真实含量。     

The laser-induced fluorescence spectrum of CoS between 15 200 and 19 000 cm-1

测量了在15200～19000 cm^-1的超声射流冷却的CoS自由基的激光诱导荧光激发谱. 观测到[15.58]⁴Δ_7/2～X⁴Δ_7/2, [16.02]⁴Δ_7/2～X⁴Δ_7/2, [16.50]⁴Δ_7/2～X⁴Δ_7/2, [17.80]⁴П_5/2～X⁴Δ_7/2和[18.00]⁴Δ_7/2～X⁴Δ_7/2五个电子跃迁序列. 此外,还测量到了大多数观察的振动带的寿命. 并讨论了这些新的电子态的电子构型.     

Influence of O2 Flux on Compositions and Properties of ITO Films Deposited at Room Temperature by Direct-Current Pulse Magnetron Sputtering

Indium tin oxide （ITO） films were deposited on glass substrates at room temperature by dc pulse magnetron sputtering. Varying 02 flux, ITO films with different properties are obtained. Both x-ray diffractometer and x-ray photoelectron spectrometer are used to study the change of crystalline structures and bonding structures of ITO films, respectively. Electrical properties are measured by four-point probe measurements. The results indicate that the chemical structures and compositions of ITO films strongly depend on the O2 flux. With increasing O2 flux, ITO films display better crystallization, which could decrease the resistivity of films. On the contrary, ITO films contain less O vacancies with increasing O2 flux, which could worsen the conductive properties of films. Without any heat treatment onto the samples, the resistivity of the ITO film could reach 6.0 × 10^-4 Ω·cm, with the optimal deposition parameter of 0.2 scem O2 flux.     

Electromechanical Behavior of Interdigitated SiO2 Cantilever Arrays

Bending and first flexural mode vibration behavior of electrostatic actuated nanometer-sized interdigitated cantilever arrays are characterized under vacuum conditions. The pull-in＇＇ effect in dc driving and the hard spring effect＇＇ in ac driving are observed. A mass sensitivity of 20 fg is expected for our devices due to the ultra-small mass of the arm and relative high Q factor. The mass-spring lump model combined with Green＇s function method is used to fit the dc driving behaviors including the pull-in voltage. For the ac driving case, the polynomial expansion of the capacitive force is used in the model. The successfully fittings of the pull-in voltage and the hard spring effect prove that our simulation method could be used for guiding the geometrical design of cantilever-based sensors.     

使用多用电表的几个疑点解析

疑点1:在遇到测小灯泡的直流电压、应读哪根刻度线的问题时,学生问:"用于测交、直流电流和直流电压的刻度线分布是均匀的;下面的用于测交流电压的"10 V挡,2.5 V挡"的刻度线为什么不均匀?且电压越小,左侧的刻度越不均匀.