反应磁控溅射制备AZO薄膜相结构的演化及机理研究

在室温下,利用直流反应磁控溅射技术在不同的氧气流量下沉积ZnO∶ Al (AZO)薄膜.采用XRD、SEM和TEM技术分析薄膜相成分、表面截面形貌及微观结构.结果表明:氧气流量为2.5 sccm时,沉积形成的薄膜为不透明具有金属导电性能的AZO/Zn( AZO)双层复合膜结构;氧气流量为3.5 sccm时,沉积形成了透明导电的AZO薄膜;氧气流量为5.0 sccm时,形成了透明不导电且含有纳米Al2O3颗粒的AZO薄膜;此外,AZO薄膜在400℃退火后,薄膜晶粒长大和(002)晶面方向择优生长更加明显以及高氧气流量沉积的AZO薄膜中的纳米Al2O3颗粒消失.     

低气压直流放电金属铜等离子体

在原子蒸气激光同位素分离技术中用直流电源实现原子化和激发电离过程,低气压下使用焊锡短路阴、阳极得到了金属铜等离子体稳定射流。在气压10^-3Pa、功率0.9kW下,测得稳定放电的伏安特性曲线和光谱强度图。通过计算得到电子密度在10⁹cm^-3左右、电子温度在0.69eV左右。     

ITER直流隔离开关短路试验研究

基于ITER极向场变流器系统,分析了直流隔离开关短路故障,提出ITER直流隔离开关短路试验要求。基于中国科学院等离子体物理研究所直流测试平台,为ITER直流隔离开关短路试验设计了先建立直流电压再闭合短路开关的后短路试验方案,包括选取变压器档位、计算试验电流所对应的直流电压等内容。通过仿真和试验验证了试验方案的可行性,试验结果证明了直流隔离开关对短路故障的抑制能力满足ITER极向场变流器运行要求。经分析计算,350 kA试验电流需要直流电压270 V。在试验中,预设直流电压270 V时,试验电流达不到350 kA,将预设直流电压提高到300 V后,试验电流峰值达到362.5 kA,且超过350 kA的部分达到100 ms。实际预设直流电压比理论计算值大30 V,这是电网电压的波动造成的。     

高温超导直流电缆系统设计及漏热分析

近年来,高温超导技术研究在输配电领域取得了显著的进展,超导电缆应用技术成为其重点发展方向。其中,冷却系统的设计是保证超导电缆输配电系统稳定运行的关键技术。针对一套高温超导直流电缆系统中的终端恒温器、电流引线和超导电缆本体等关键部件进行了漏热分析,并通过理论计算和有限元仿真,对高温超导电缆系统的热负荷进行了评估,为该系统可靠运行提供了保障。     

用于FEL-THz电子束测量的LW系统北大核心CSCD

基于汤姆逊背散射的激光丝扫描(LW)方法作为无阻拦电子横向尺寸测量手段,近年来广泛应用于高能对撞机和能量回收环直线加速器。为在连续模式下测量高平均功率相干强太赫兹源的直流光阴极电子枪(DC-gun)电子束横向束斑,本文提出了一种基于驱动激光器分束的高重复频率,较低脉冲功率的新型LW系统。通过理论及模拟分析,证明该系统相对于常规LW系统具有成本低、精度高、探测时间短、对电子束影响小的优势,并给出了用于自由电子激光太赫兹(FEL-THz)装置DC-gun出口电子束LW系统的实验设计。     

Sputtering pressure influence on growth morphology,surface roughness,and electrical resistivity for strong anisotropy beryllium film

The strong anisotropy beryllium （Be） films are fabricated at different sputtering pressures by direct current magnetron sputtering. With the increase of pressure, the deposition rate of Be film first increases, and when the pressure exceeds 0.8 Pa, it gradually descends. The X-ray diffraction analysis indicates that Be film is of α-Be phase, its surface always reveals the （101） crystal plane possessing the low surface energy. As for the growth morphology of Be film, the surface is mainly characterized by the fibrous grains, while the cross section shows a transition from a columnar grain to a mixed grain consisting of a cone-shaped grain and a columnar grain as the sputtering pressure increases. The large grain fraction decays exponentially from 75.0% to 59.3% with the increase of sputtering pressure p, which can improve the grain size uniformity. The surface roughness increases due to the insufficient atom diffusion, which is comparable to its decrease due to the etching effect at p 〈 0.8 Pa, while it increases drastically at p 〉 0.8 Pa, and this increase is dominated by the atom diffusion. The electrical resistivity values of Be films range from 1.7 μΩ m to 2.7 μΩ m in the range 0.4 Pa-1.2 Pa, which is 50 times larger than the bulk resistivity.     

Nitriding molybdenum： Effects of duration and fill gas pressure when using lO0-Hz pulse DC discharge technique

Molybdenum is nitrided by a 100-Hz pulsed DC glow discharge technique for various time durations and fill gas pressures to study the effects on the surface properties of molybdenum. X-ray diffractometry （XRD）, scanning electron microscopy （SEM）, and atomic force microscopy （AFM） are used for the structural and morphological analysis of the nitrided layers. Vickers＇ microhardness tester is utilized to investigate surface microhardness. Phase analysis shows the formation of more molybdenum nitride molecules for longer nitriding durations at fill gas pressures of 2 mbar and 3 mbar （1 bar = 105 Pa）. A considerable increase in surface microhardness （approximately by a factor of 2） is observed for longer duration （10 h） and 2-mbar pressure. Longer duration （10 h） and 2-mbar fill gas pressure favors the formation of homogeneous, smooth, hard layers by the incorporation of more nitrogen.     

脉冲管制冷机第三种直流敏感性实验研究

直流是脉冲管制冷机中重要的机理性问题。本文介绍了脉冲管制冷机第三种直流效应的最新理论研究结果,深入分析了第三种直流效应的产生机理和影响因素。结合制冷机系统的流动和热力学非对称性,通过实验研究了脉冲管制冷机第三种直流效应对几何结构、冷头温度、频率、压力等参数的敏感性。     

Effects of Annealing on Schottky Characteristics in A1GaN/GaN HEMT with Transparent Gate Electrode

A1GaN/GaN heterostructure transistors are promising for power and switching applications. In addition, the transparent wide band-gap A1GaN/GaN heterostructure systems have received considerable attention to transparent electronics. Nowdays, Al-doped ZnO （AZO） thin film plays an increas- ingly important role in various fields of transparent electronics.The AZO-gated A1GaN/GaN HEMT with good dc characteristics and frequency character- istics has been reported. Annealing is widely used to improve the electri- cal characteristics of A1GaN/GaN HEMTs. It is re- ported that the Schottky leakage current can be re- duced by over four orders of magnitude by annealing in an A1GaN/GaN heterostructure with ITO/Ni/Au electrode. Pei et al. reported that the transparency of Ni/ITO gates of A1GaN/GaN HEMTs has been sig- nificantly improved after annealing. However, the evaluation of Schottky C V characteristics was ab- sent. Up to now, few results are reported on the Schot- tky annealing characteristics of AZO in A1GaN/GaN HEMT. Thus the effects of annealing on the leakage current, transparency and interface states character- istics need further study.     

高择优取向Mo薄膜的直流磁控溅射制备及其电学性能

使用直流磁控溅射法在玻璃基底上沉积Mo薄膜,采用X射线衍射仪、原子力显微镜和四探针测试系统研究了溅射工艺对Mo薄膜的结构、形貌和电学性能的影响.结果表明:当基片温度为150 ℃时,薄膜获得(211)晶面择优取向生长,而在低于250 ℃的其它温度条件下,样品则表现为(110)晶面择优取向生长.进一步的表面形貌分析显示:薄膜的粗糙度随基片温度变化不明显,其值大约为0.35 nm,随溅射功率密度的增大而变大|电学性能方面:随着溅射功率密度的升高,薄膜导电性能迅速增强,电阻率呈现近似指数函数衰减|随着基底温度的升高,薄膜的电阻率先减小后增大,当基底温度为150 ℃时,薄膜电阻率降低至最小值2.02×10-5 Ω·cm.