时间分辨傅氏变换红外光谱方法中的定时直流成分

在常规的傅里叶变换红外光谱学中，干涉图的直流成分为∫＾∞０Ｂ（σ）ｄσ，而在时间分辨ＦＴＩＲ中，直流成分Ｉｄｅ成为∫（∞，０）Ｂ（σ，τ）ｄσ，即与信号出现的时间τ有关，称为定量直流成分。     

电弧-AES法测定金属硅中12个杂质元素

用直流电弧粉末法在氩气气氛中摄谱，消除硅带干扰，采用铍为内标，直接测定金属硅中12个杂质元素，此法较化学光谱法具有操作简便、快速，试剂耗量少；较化学法和分光光度法更加优越，能同时测定12个元素，更能反映金属硅的真实含量。     

The laser-induced fluorescence spectrum of CoS between 15 200 and 19 000 cm-1

测量了在15200～19000 cm^-1的超声射流冷却的CoS自由基的激光诱导荧光激发谱. 观测到[15.58]⁴Δ_7/2～X⁴Δ_7/2, [16.02]⁴Δ_7/2～X⁴Δ_7/2, [16.50]⁴Δ_7/2～X⁴Δ_7/2, [17.80]⁴П_5/2～X⁴Δ_7/2和[18.00]⁴Δ_7/2～X⁴Δ_7/2五个电子跃迁序列. 此外,还测量到了大多数观察的振动带的寿命. 并讨论了这些新的电子态的电子构型.     

Influence of O2 Flux on Compositions and Properties of ITO Films Deposited at Room Temperature by Direct-Current Pulse Magnetron Sputtering

Indium tin oxide （ITO） films were deposited on glass substrates at room temperature by dc pulse magnetron sputtering. Varying 02 flux, ITO films with different properties are obtained. Both x-ray diffractometer and x-ray photoelectron spectrometer are used to study the change of crystalline structures and bonding structures of ITO films, respectively. Electrical properties are measured by four-point probe measurements. The results indicate that the chemical structures and compositions of ITO films strongly depend on the O2 flux. With increasing O2 flux, ITO films display better crystallization, which could decrease the resistivity of films. On the contrary, ITO films contain less O vacancies with increasing O2 flux, which could worsen the conductive properties of films. Without any heat treatment onto the samples, the resistivity of the ITO film could reach 6.0 × 10^-4 Ω·cm, with the optimal deposition parameter of 0.2 scem O2 flux.     

Electromechanical Behavior of Interdigitated SiO2 Cantilever Arrays

Bending and first flexural mode vibration behavior of electrostatic actuated nanometer-sized interdigitated cantilever arrays are characterized under vacuum conditions. The pull-in＇＇ effect in dc driving and the hard spring effect＇＇ in ac driving are observed. A mass sensitivity of 20 fg is expected for our devices due to the ultra-small mass of the arm and relative high Q factor. The mass-spring lump model combined with Green＇s function method is used to fit the dc driving behaviors including the pull-in voltage. For the ac driving case, the polynomial expansion of the capacitive force is used in the model. The successfully fittings of the pull-in voltage and the hard spring effect prove that our simulation method could be used for guiding the geometrical design of cantilever-based sensors.     

使用多用电表的几个疑点解析

疑点1:在遇到测小灯泡的直流电压、应读哪根刻度线的问题时,学生问:"用于测交、直流电流和直流电压的刻度线分布是均匀的;下面的用于测交流电压的"10 V挡,2.5 V挡"的刻度线为什么不均匀?且电压越小,左侧的刻度越不均匀.     

掺银氧化锌纳米棒的水热法制备研究

利用水热法在直流磁控溅射制备的掺铝氧化锌 (AZO) 种子层上制备了不同形貌和光学性能的掺银ZnO纳米棒, 并采用XRD、扫描电镜、透射谱、光发射谱和EDS谱详细研究了Ag离子与Zn离子的摩尔百分比 (R_Ag/Zn) 及AZO种子层对掺银ZnO纳米棒的结构和光学性质的影响. 随着R_Ag/Zn的增加, 掺银ZnO 纳米棒的微结构和光学性质的变化与银掺杂诱导的纳米棒的端面尺寸变化有关. 平均端面尺寸的变化归结于种子层颗粒大小和颗粒数密度不同导致掺入的Ag离子的相对比例不同. 溅射15 min的AZO种子层上生长的ZnO纳米棒由于缺陷增多导致在可见光区的发光峰明显强于溅射10 min 的AZO种子层上、相同R_Ag/Zn 条件下生长的ZnO纳米棒. Ag掺杂产生的点缺陷增多导致可见光区PL波包较宽. 纯ZnO纳米棒的微结构与种子层厚度导致的结晶度和颗粒大小有关. 关键词： ZnO纳米棒 水热法 Ag掺杂 直流磁控溅射     

Ar原子偶宇称3p5(2P1/2)nl′ [K′]J (l′=1, 3)自电离Rydberg态共振增强激发光谱

用脉冲直流放电产生Ar原子亚稳态3p⁵4s[3/2]₂和3p⁵4s′[1/2]₀．在单光子32500～35600 cm^-1能量范围内, 结合飞行时间质谱技术获得Ar原子共振增强激发光谱．光谱分析表明,所有谱线来源于Ar原子3p⁵4s[3/2]₂和3p⁵4s′[1/2]₀两个亚稳态吸收单个光子向偶宇称np′、nf′自电离Rydberg态序列的跃迁．实验观测到许多新的自电离能级,并获得更精确和系统的能级位置和量子亏损值数据．     

合成反铁磁Ni81Fe19/Co90Fe10/Ru/Co90Fe10/Ni81Fe19的研究

采用直流磁控溅射方法制备了一系列的合成反铁磁及以其为自由层的自旋阀.研究发现,在Ni81,Fe19与Ru层之间插入适当厚度的Co90Fe10层后,可有效地提高合成反铁磁两磁性层间的反铁磁耦合强度,得到具有饱和场日.更高、饱和磁化强度M.更低、热稳定性更好的合成反铁磁.另外,以这种合成反铁磁作自旋阀的自由层时,可有效提高自旋阀的稳定性.     

100kV直流高温超导电缆终端应力锥设计

本文提出了一种新的单直线应力锥设计方法,根据PPLP材料的绝缘特性,结合超导电缆的本体尺寸和设计电压,给出了增饶绝缘厚度和应力锥轴向长度的设计数据,其中增饶绝缘厚度为3.5 mm,应力锥轴向长度为38.5 mm,并对单直线应力锥进行电场数值分析,结果表明,所设计的单直线应力锥满足100 kV直流高温超导电缆运行要求。