石墨烯在有机/聚合物太阳能电池中的应用进展

近年来有机/聚合物太阳能电池得到国内外研究者的广泛关注,但其目前较低的能量转换效率有待进一步提高以满足市场化的需求。本文综述了新型二维电子材料石墨烯及其衍生物在有机/聚合物太阳能电池的受体材料、电极材料、电荷传输材料方面的研究进展,分析了石墨烯功能化的方法以及石墨烯衍生物应用于有机太阳能电池中的性能参数,最后对石墨烯及其衍生物的合成和修饰方法进行展望,以期将来在有机太阳能电池材料中得到更好的应用。     

影响分子沉积膜纳米摩擦特性的几个因素

利用原子力显微镜探讨了表面电荷及分子端基对分子沉积膜纳米摩擦特性的影响，并考察了表面形貌在不同扫描方向和法向高度上对摩擦力的影响．结果表明：对Si3N4针尖而言，表面净电荷对摩擦特性有一定的影响，不同类型的表面电荷对摩擦力和摩擦系数的影响不同，正电荷影响相对较大；在较小载荷和粘附力的条件下，针尖在表面上滑动时所受的摩擦作用同分子端基有关；单层CuTsPc分子沉积膜表面形貌的取向对摩擦力影响不大，分子沉积膜的表面高度同摩擦力，即时测量值并不存在对应关系，摩擦力受表面形貌的影响较小．     

高匹配的BiVO4/WO3纳米碗异质结光阳极用于高效光电化学分解水(英文)

光电化学(PEC)分解水制氢,已成为将太阳能转化为绿色可持续氢能极具潜力的途径之一.目前,单斜相钒酸铋(BiVO₄)因其合适的带隙及能带位置、无毒且含量丰富等优点,被认为是理想的光阳极材料.然而, BiVO₄较低的载流子迁移率(4×10^-2 cm²V^-1s^-1和较短的空穴扩散长度(<100 nm),导致BiVO₄光阳极电子-空穴复合较严重,极大地限制了其性能.为克服上述缺陷,除减小BiVO₄纳米颗粒的粒径以匹配其较短的空穴扩散长度,使空穴能有效转移到其表面参与水氧化反应;或在其表面沉积一层薄的氧气释放反应助催化剂(OEC)层以增强水氧化反应动力学以外,还应关注如何进一步有效提升BiVO₄电荷分离效率.因此,在BiVO₄和氟掺杂的氧化锡(FTO)电极界面之间插入另一种半导体材料构筑异质结以促进BiVO₄电荷分离,进一步提升BiVO_4<...     

高分辨率光谱仪线阵CCD采集系统设计

为了满足高分辨率光谱仪高灵敏度、高分辨率、低噪声的技术要求,设计了用于微光成像系统的背照式CCD驱动电路及主控电路。线阵CCD采集系统采用Altera公司的MAX X系列FPGA作为核心控制器件,为线阵CCD提供多路驱动信号;线阵CCD探测器输出模拟信号经过信号预处理及AD采样,变换为数字信号后通过USB接口模块发送给光谱仪。通过将线阵CCD采集系统安装到高分辨率光谱仪,对汞灯谱线进行特征峰测试,光谱分辨率可以达到0.062 nm,满足高分辨率光谱仪的探测要求。     

运动电荷的电/磁场高斯定理的直接验证

尽管麦氏方程组的张量协变形式已然揭示了高斯定理的相对论协变性,但在大学物理的教学中仍然缺乏对运动电荷的高斯定理的切身体会与直接验证.本文首先运用电磁场张量变换的方法推导出运动电荷的电场与磁场强度,再运用积分及矢量运算的若干技巧,直接而简单地验证了高斯定理对于运动电荷的电场与磁场仍然满足,从而直接验证了电场与磁场的高斯定...     

导体壳内外的电场彼此独立的简易证明

本文提供了一种证明导体壳的内外电场彼此独立的简易方法.     

A novel simulation method to evaluate the collection performance of a monolithic active pixel sensor

A novel simulation method is presented in this paper to evaluate the collection performance of monolithic active pixel sensor (MAPS) devices for minimum ionizing particle tracking. A simplified 3D matrix pixel structure is built using the computer aided design software Sentaurus. The virtual device is then divided into hundreds of parts and an independent customized X photon model is involved in each part to simulate the conditions under ⁵⁵Fe radiation. After data processing and analysis, charge collection efficiency, collection time and diffusion conditions can be estimated in detail. In order to verify the reliability of the method, comparisons are made between the simulations and experiments. Although there are some defects, it can be concluded that the proposed idea is a feasible method for the evaluation of the MAPS collection performance.     

重离子冷却储存环CSRm双电子复合实验研究类锂36,40Ar15+离子同位素移动

配备电子冷却装置的重离子储存环为开展高电荷态离子的双电子复合（dielectronic recombination,DR）精密谱学研究提供了绝佳的实验平台。本工作在兰州重离子加速器冷却储存环主环（HIRFL-CSRm）上开展了类锂36,40Ar15+离子的双电子复合实验,实验观测了电子-离子质心系能量范围为0~35 eV的双电子复合速率系数谱。通过外推法获得了36,40Ar15+离子2s_1/2→2p_1/2和2s_1/2→2p_3/2的跃迁能量。同时利用GRASP2K程序理论计算了36,40Ar15+离子2s_1/2→2p_1/2和2s_1/2→2p_3/2跃迁的质量移动因子和场移动因子,进而得到双电子复合谱的同位素移动值。36,40Ar15+离子2s_1/2→2p_1/2和2s_1/2→2p_3/2同位素移动分别为0.861 meV和0.868 meV。它们均小于目前CSRm上双电子复合实验的实验分辨为~10 meV,进而解释了实验测量的DR谱上未能观察到同位素移动的原因。然而,高电荷态离子的同位素移动场效应与原子序数Z5成正比,因此,在重离子加速器冷却储存环实验环（HIRFL-CSRe）以及未来大型加速器--强流重离子加速器装置（HIAF）上有望通过DR精密谱学方法研究高电荷态重离子甚至放射性离子的同位素移动,进而获得相关原子核的核电荷半径等信息。The cooler storage ring is equipped with an electron-cooler. It is an excellent experimental platform for dielectronic recombination (DR) experiment of highly-charged ions. In this paper, the dielectronic recombination experiments of lithium-like Ar15+ ions with mass number 36 and 40 are conducted at the HIRFL-CSRm(main ring of the Cooling Storage Ring of Heavy Ion Research Facility in Lanzhou). The experimental electron-ion collision energy scale is from 0 eV to 35 eV. Extrapolation method is exploited to obtain the excitation energies of transitions 2s_1/2→2p_1/2 and 2s_1/2→2p_3/2 of the 36,40Ar15+ ions from experimental data. Meanwhile, GRASP2K program is utilized to calculate the mass shift factors and field shift factors of 36,40Ar15+ ions for 2s_1/2→2p_1/2 and 2s_1/2→2p_3/2 transitions to obtain isotope shifts in DR spectra. In theoretical calculation, isotope shifts of 36,40Ar15+ ions corresponding to 2s_1/2→2p_1/2 and 2s_1/2→2p_3/2 are 0.861 meV and 0.868 meV, respectively. They are both less than the experimental precision (~10 meV) of these dielectronic recombination experiments at the CSRm, which explains that isotope shifts cannot be distinguished from the experimental dielectronic recombination spectra. However, the field shift of highly-charged ions is proportional to Z5. In the future, the dielectronic recombination experiments of highly-charged heavy ions even radioactive ions will be conducted at the HIRFL-CSRe (experimental ring of the Cooling Storage Ring of Heavy Ion Research Facility in Lanzhou) and the future large accelerator facility--HIAF(High intensity Heavy-ion Accelerator Facility) to measure isotope shifts to obtain the nuclear charge radius information.     

Novel high-voltage self-adaptive power device based on interface charge＊

This paper presents a novel high-voltage lateral double diffused metal-oxide semiconductor （LDMOS） with self- adaptive interface charge （SAC） layer and its physical model of the vertical interface electric field. The SAC can be self-adaptive to collect high concentration dynamic inversion holes, which effectively enhance the electric field of dielectric buried layer （EI） and increase breakdown voltage （BV）. The BV and EI of SAC LDMOS increase to 612 V and 600 V/tim from 204 V and 90.7 V/ttm of the conventional silicon-on-insulator, respectively. Moreover, enhancement factors of r/which present the enhanced ability of interface charge on EI are defined and analysed.     

采用瞬态电致发光研究磷光掺杂体系发光瞬时过冲的发射机理

掺杂型有机电致发光器件中载流子累积、载流子复合等物理过程的深入了解对提高器件效率和稳定性有重要作用。通过瞬态电致发光测量可以研究掺杂型有机电致发光器件内部载流子累积。对结构为: ITO/NPB(30 nm)/host: Ir(ppy)₃/BCP(10 nm)/Alq₃(20 nm)/LiF(0.7 nm)/Al(100 nm)的器件分别研究主体材料以及客体掺杂浓度变化对有机掺杂型器件瞬态发光行为的影响。实验发现,当单脉冲驱动电压关闭后,只有TAZ: Ir(ppy)₃掺杂器件出现发光瞬时过冲现象,即发光强度衰减到一定时间时突然增强;且随着客体掺杂浓度的增加,瞬时过冲强度逐渐增强。通过分析TAZ: Ir(ppy)₃掺杂器件的瞬时过冲强度对主体材料与掺杂浓度的依赖关系,进一步发现,瞬时过冲效应强度主要受限于发光层内部积累的电子载流子;TAZ: Ir(ppy)₃发光层内电子容易被客体材料分子俘获并积累,电场突变时陷阱电子容易跳跃到主体材料上并与主体材料上积累的空穴形成激子,激子能量传递到客体材料上并复合发光继而出现发光强度的瞬时过冲现象。研究发光瞬时过冲行为可探究器件发光层内的载流子和激子的动态行为,有利于指导器件的设计,从而减少积累电荷的影响,提高器件的性能。