HL-2A装置ECRH高压电源分析计算和模拟仿真

HL-2A装置电子回旋共振加热系统主要由4只68GHz，550kW，脉宽1s，管体接地，阴极电压-55kv，阳极电压25kV，电流25A的回旋管组成。本文介绍的ECRH高压电源是同旋管的主高压电源，它主要用于加速束电流，提供直流输入功率．主高压电源的稳定对有效地提高回旋管的电功率与微波功率的转换效率起着重要的作用。     

在线单模光纤偏振控制器研究

利用Ｐｏｉｎｃａｒｅ球理论首次全面分析了在线全光纤偏振控制器。结果发现该偏振器可以有八种不同路径，实现任意偏振态之间的转化，最后通过实验验证了其工作性能。     

物理光学实验——益光教学仪器

长春市益光教学仪器厂向您推荐2种更新首选产品:1 )JXD Xf移测显微镜采用专利调焦手轮装置,解决调焦手轮下滑现象.2 )DTX型低压钠(汞)灯电源特点:a .铁芯限流,无声;b .电流电压指标均在最佳状态;c .悬挂灯高低可调,灯罩可旋转360°,任意位置可转停;d .备有座式.显微镜调焦手轮防滑装置的专利持有人为董玉明.如有意在原有显微镜装上此装置者,请与本厂联系.本厂加工各种光学透镜、棱镜、扩束镜、光栅、偏振片、波片、牛顿环、光杠杆等配件,尺读望远镜、高压汞灯电源,各种仪器灯泡。欢迎选用!通讯地址:长春市立信街1 2号　长春市益光教学仪…     

兰州重离子加速器控制系统DSP组件设计

针对重离子加速器部分电源的控制要求,进行了分析研究,提出并实现了一种实时、高效、多功能的控制系统。该系统基于数字信号处理器（DSP）和两片现场可编程门阵列（FPGA）芯片相结合的核心处理构架,在系统后端利用PXI总线接口配合FPGA来与工控机箱中的系统控制器和其他控制组件进行大批量数据交互;系统前端利用直接数字频率合成器、模数转换器和数模转换器等器件结合DSP和FPGA中的控制算法及相应控制机制来实现对不同电源控制参数的处理和功率的输出;平台中两组光纤模块也与FPGA相配合实现对同步触发事例等实时数据的收发和调试。     

高温超导电缆直流测试电源平台的搭建

根据高温超导电缆测试用直流电源平台的要求,建立了硬件平台。该平台为模块化结构,具有输出精度高,便于扩展等特点;为方便操作,建立了基于LabVIEW的软件平台,对直流电源平台进行远程控制,并给出了远程控制的程序流程图,实现了电流的匀速上升和下降以及上升过程中的中断操作;利用该电源平台进行了超导电缆的临界电流测试实验,验证了直流电源平台符合高温超导电缆的测试要求。     

全光纤量子通信系统中的高速偏振控制方案

偏振控制在光通信中是至关重要的技术, 关系着通信系统的稳定性和误码率. 本文提出一种基于双向Sagnac环工作方式的全光纤高速偏振控制方案, 通过调节环中一个光纤电光相位调制器的相位差而精确控制光场偏振方向, 并且实现了单个端口输出各种偏振态, 无需后续耦合操作. 相位控制精度为10^-3 rad, 最大消光比可达30 dB, 工作速率可达2 GHz. 由于本方案的精度、调制速度和稳定性都很高, 并采用了器件简单、成本低廉的全光纤光路, 易于集成, 在量子保密通信等光通信领域中有很好的应用前景. 关键词： 光纤偏振控制器 Sagnac环 量子通信     

对一道静电计相关易错题的深入分析

1问题的引出【题目】如图1所示,电源电压为200V,两个电容器C1,C2完全相同,静电计读数U和电压表读数U′,以下结果正确的是A.U=100V,U′=100VB.U=0,U′=200VC.U=200V,U′=0D.U=100V,U′=0图1错解:许多学生(甚至教师)认为电压表和静电计都是测量电压的仪器,两者的读数应相同,错选选项A.静电计是研究     

Adaptive function projective synchronization of uncertain complex dynamical networks with disturbance

We investigate the problem of function projective synchronization (FPS) in drive-response dynamical networks with non-identical nodes. An adaptive controller is proposed for the FPS of complex dynamical networks with uncertain parameters and disturbance. Not only are the unknown parameters of the networks estimated by the adaptive laws obtained from the Lyapunov stability theory and Taylor expansions, but the unknown bounded disturbances are also simultaneously conquered by the proposed control. Finally, a numerical simulation is provided to illustrate the feasibility and effectiveness of the obtained result.     

Lead zirconate titanate behaviors in an LDMOS

The behaviors of lead zirconate titanate (PZT) deposited as the dielectric for high-voltage devices are investigated experimentally and theoretically. The devices demonstrate not only high breakdown voltages above 350 V, but also excellent memory behaviors. A drain current-gate voltage (ID-VG) memory window of about 2.2 V is obtained at the sweep voltages of ±10 V for the 350-V laterally diffused metal oxide semiconductor (LDMOS). The retention time of about 270 s is recorded for the LDMOS through a controlled ID-VG measurement. The LDMOS with memory behaviors has potential to be applied in future power conversion circuits to boost the performance of the energy conversion system.     

The supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

Using computer-aided design three-dimensional simulation technology,the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated.It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing,which is quite attractive for dynamic voltage scaling and subthreshold circuit radiation-hardened design.Additionally,the effect of supply voltage on charge collection is also investigated.It is concluded that the supply voltage mainly affects the bipolar gain of the parasitical bipolar junction transistor(BJT) and the existence of the source plays an important role in supply voltage variation.